Semiconductor device

1 . A semiconductor device comprising:

a deformable membrane with a membrane stiffness;

a support structure;

at least one electric contact configured to obtain an electric signal indicative of a deformation of the deformable membrane; and

at least one mass element attached to, or integral with, the deformable membrane,

wherein the deformable membrane comprises a membrane border that is partially in direct contact with the support structure and partially separated by at least one aperture from the support structure.

2 . The semiconductor device of claim 1 , wherein the at least one mass element partially overlaps with the at least one aperture.

3 . The semiconductor device of claim 1 , further comprising at least one flap separated from the deformable membrane and supported by the support structure, each flap partially occupying at least one aperture.

4 . The semiconductor device of claim 1 , wherein the at least one mass element comprises one single mass element with a central hole.

5 . The semiconductor device of claim 1 , wherein the at least one mass element comprises a metal material.

6 . The semiconductor device of claim 1 , wherein the at least one mass element has a thickness less than 300 μm (micrometers).

7 . The semiconductor device of claim 1 , wherein the at least one mass element is subjected to a movement to generate at least one translatory oscillating mode.

8 . The semiconductor device of claim 1 , wherein a center of mass of the at least one mass element is in a centered position of the deformable membrane.

9 . The semiconductor device of claim 1 , wherein the semiconductor device is a capacitor with a variable capacitance, the capacitor comprising:

at least one first electrode; and

at least one second electrode,

wherein the at least one first electrode includes the deformable membrane,

wherein the capacitance is variable based on a deformation of the deformable membrane and a movement of the at least one mass element, and

wherein the capacitor is configured to provide the electric signal based on the capacitance.

10 . The semiconductor device of claim 9 , wherein the at least one second electrode includes a backplate.

11 . The semiconductor device of claim 1 ,

wherein the deformable membrane includes a piezoelectric layer, and

wherein the at least one electric contact includes a first electric contact and a second electric contact electrically connected to opposite sides of the piezoelectric layer.

12 . A sensor device comprising:

a semiconductor device including:

a deformable membrane with a membrane stiffness;

a support structure;

at least one electric contact configured to obtain an electric signal indicative of a deformation of the deformable membrane; and

at least one mass element attached to, or integral with, the deformable membrane,

wherein the deformable membrane comprises a membrane border that is partially in direct contact with the support structure and partially separated by at least one aperture from the support structure;

analog-to-digital circuitry configured to convert the electric signal indicative of the deformation of the deformable membrane into a digital signal; and

at least one digital measurer configured to obtain, from the digital signal, a measurement of at least one pressure, vibration, or acceleration.

13 . The sensor device of claim 12 , further comprising a plurality of semiconductor devices having different displacements, weights and shapes, of the respective at least one mass elements.

14 . The sensor device of claim 12 , wherein the sensor device is a voice pickup unit (VPU), and

wherein the VPU is configured to pick up vibration signals from bone during speech.

15 . The semiconductor device of claim 12 , wherein the at least one mass element partially overlaps with the at least one aperture.

16 . A semiconductor device comprising:

a deformable membrane with a uniform thickness;

a support structure;

at least one electric contact configured to obtain an electric signal indicative of a deformation of the deformable membrane; and

at least one mass element attached to the deformable membrane,

wherein the deformable membrane comprises a membrane border that is partially in direct contact with the support structure and partially separated by at least one aperture from the support structure.

17 . The semiconductor device of claim 16 , wherein the deformable membrane consists of a single layer.

18 . The semiconductor device of claim 17 , wherein the deformable membrane consists of a doped or undoped semiconductive material or a metal material.

19 . The semiconductor device of claim 16 , wherein the deformable membrane comprises a plurality of layers.

20 . The semiconductor device of claim 16 , wherein the at least one mass element partially overlaps with the at least one aperture.