Precursors for selective deposition of silicon-containing films
Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR 1 )(OR 2 ), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R 1 and R 2 are independently a hydrogen, an alkoxyl, or R 1 and R 2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.
1 . A precursor comprising:
a compound of the formula:
where:
R is an alkyl, an alkenyl, or an alkoxy; and
R 1 and R 2 are independently an alkyl, or R 1 and R 2 are bonded to form a heterocycle;
wherein R is different from at least one of OR 1 , OR 2 , or any combination thereof.
2 . The precursor of claim 1 , wherein R is a vinyl, an allyl, or an alkoxy.
3 . The precursor of claim 1 , wherein R is a vinyl, an allyl, a tert-butoxy, or a tert-pentoxy.
4 . The precursor of claim 1 , wherein R 1 and R 2 are a tert-pentyl.
5 . The precursor of claim 1 , wherein R 1 and R 2 are tert-butyl.
6 . The precursor of claim 1 , wherein R 1 and R 2 are bonded to form a 5-membered heterocycle.
7 . The precursor of claim 1 , wherein the precursor comprises a compound of the formula:
where:
R 1 and R 2 are independently an alkyl, or R 1 and R 2 are bonded to form a heterocycle.
8 . The precursor of claim 1 , wherein the precursor comprises a compound of the formula:
9 . A device comprising:
a substrate having a first surface portion and a second surface portion; and
a silicon-containing film located on the first surface portion of the substrate,
wherein the silicon-containing film comprises a reaction product of at least a precursor and a reactive group on the first surface portion of the substrate,
wherein the precursor comprises a compound of claim 1
wherein the second surface portion of the substrate does not comprise the silicon-containing film.
10 . The device of claim 9 , wherein the first surface portion of the substrate comprises at least one of a dielectric material, an insulating material, or any combination thereof.
11 . The device of claim 9 , wherein the first surface portion of the substrate comprises at least one of SiO 2 , SiN, or any combination thereof.
12 . The device of claim 9 , wherein the first surface portion of the substrate comprises a material having a dielectric constant of 3.9 or less; wherein the second surface portion of the substrate comprises a material having a dielectric constant of greater than 3.9.
13 . The device of claim 9 , wherein the silicon-containing film has a thickness of 20 Å to 100 μm.
14 . The device of claim 9 , wherein the silicon-containing film comprises SiO 2 .
15 . The device of claim 9 , wherein the silicon-containing film comprises SiCOH.
16 . The device of claim 9 , wherein the device is a self-aligned via.
17 . A method comprising:
obtaining a precursor of claim 1
vaporizing the precursor to produce a vaporized precursor; and
exposing a substrate to the vaporized precursor in a presence of a catalyst to selectively deposit a silicon-containing film on the substrate.
18 . The method of claim 17 , wherein the method does not comprise an etching step.
19 . The method of claim 17 , wherein the catalyst comprises at least one of an aluminum oxide, a hafnium oxide, a zirconium oxide, or any combination thereof.
20 . The method of claim 17 , wherein the catalyst covers a first surface portion of the substrate and is absent from a second surface portion of the substrate.