Method for growing bimodal-sized INAS/GAAS quantum dots, quantum dot, and quantum dot composition
The invention provides a method for growing bimodal-sized InAs/GaAs quantum dots, quantum dots, and a quantum dot composition. The method includes: S1. at a first temperature, depositing n atomic layers of InAs on a GaAs base grown with a GaAs buffer layer, where 1.4<n<1.7; S2. at a second temperature, performing annealing to form quantum dot nuclei, where the second temperature is lower than the first temperature; and S3. continuing to deposit 1.7-n atomic layers of InAs at the second temperature, where the quantum dot nuclei form first quantum dots, when a deposition amount reaches 1.7 atomic layers, second quantum dots are formed on the flat surface between the first quantum dots, and a size of the second quantum dot is smaller than a size of the first quantum dot.
1 . A method for growing bimodal-sized InAs/GaAs quantum dots, comprising steps of:
S1: at a first temperature, depositing n atomic layers of InAs on a GaAs substrate grown with a GaAs buffer layer, wherein 1.4<n<1.7;
S2: at a second temperature, performing annealing to form quantum dot nuclei, wherein the second temperature is lower than the first temperature; and
S3: continuing to deposit 1.7-n atomic layers of InAs at the second temperature, wherein the quantum dot nuclei form first quantum dots, when a deposition amount reaches 1.7 atomic layers, second quantum dots are formed on a surface between the first quantum dots, and a size of the second quantum dots is smaller than a size of the first quantum dots.
2 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 1 , wherein the first temperature ranges from 495° C. to 500° C., the second temperature ranges from 460° C. to 465° C., and the first temperature is higher than the second temperature.
3 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 1 , wherein in step S1, a deposition rate of InAs ranges from 0.007 atomic layer/s to 0.01 atomic layer/s, an As atmosphere is As 4 , and intermittent deposition of In is utilized for depositing.
4 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 3 , wherein a pressure of As 4 is set to 3.4×10 −6 Torr.
5 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 3 , wherein in the intermittent deposition of In, one cycle includes starting deposition of In for 30 s and stopping deposition of In for 15 s, and the cycle is repeated until a total equivalent deposition amount is reached.
6 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 1 , wherein a duration of the annealing in step S2 ranges from 3 minutes to 6 minutes.
7 . The method for growing bimodal-sized InAs/GaAs quantum dots according to claim 1 , wherein in step S1, the GaAs buffer layer has a thickness of 500 nm.