Method of preparing quantum dot, optical member including the quantum dot prepared using the method, and electronic device including the quantum dot
A method of preparing a quantum dot, an optical member including the quantum dot prepared using the method, and an electronic device including the quantum dot are provided. The method includes forming a first particle including a core and a protective shell from a quantum dot composition including a precursor containing a tellurium (Te) element, a precursor containing a Group II element, and a precursor containing a Group VI element; purifying the first particle; and forming a second particle including a first shell by mixing the first particle with a first shell composition including the precursor containing a Group II element and the precursor containing a Group VI element and forming the first shell from the protective shell.
1 . A method of preparing a quantum dot, the method comprising:
forming a first particle comprising a core and a protective shell from a quantum dot composition comprising
a precursor containing a tellurium (Te) element,
a precursor containing a Group II element, and
a precursor containing a Group VI element;
purifying the first particle, the purifying comprising removing an oxide film formed on a surface of the first particle; and
forming a second particle comprising a first shell by
mixing the first particle with a first shell composition comprising
the precursor containing a Group II element and
the precursor containing a Group VI element and
forming the first shell from the protective shell,
wherein the core and the protective shell each independently comprises a Group II-VI compound.
2 . The method of claim 1 , wherein a reaction temperature of the forming of the first particle is in a range of about 100° C. to about 400° C.
3 . The method of claim 1 , wherein the forming of the first particle comprises:
forming of a core comprising a tellurium (Te) element; and
forming a protective shell not comprising any tellurium (Te) element.
4 . The method of claim 3 , wherein the forming of the protective shell not comprising any tellurium (Te) element comprises
further adding the precursor containing a Group II element and the precursor containing a Group VI element to the quantum dot composition.
5 . The method of claim 1 , wherein the quantum dot composition comprises a first solvent having a boiling point of about 350° C. or lower.
6 . The method of claim 1 , wherein a thickness of the protective shell is in a range of about 0.3 nm to about 1 nm.
7 . The method of claim 1 , wherein a radius of the core is in a range of about 0.1 nm to about 3.5 nm.
8 . The method of claim 1 , wherein the purifying of the first particle comprises removing an unreacted quantum dot composition.
9 . The method of claim 8 , wherein the removing of the oxide film further comprises
treating the first particle with an oxide film removing agent, and
removing the oxide film formed on the surface of the first particle.
10 . The method of claim 1 , wherein the forming of the second particle is performed at a temperature higher than a temperature of the forming of the first particle.
11 . The method of claim 1 , wherein a reaction temperature of the forming of the second particle is in a range of about 200° C. to about 500° C.
12 . The method of claim 1 , wherein a thickness of the first shell is in a range of about 1.5 nm to about 3.5 nm.
13 . The method of claim 1 , wherein the first shell composition comprises a second solvent having a boiling point of about 350° C. or higher.
14 . The method of claim 1 , further comprising forming a second shell by mixing the second particle with a second shell composition comprising a precursor containing a Group II element and a precursor containing a Group VI element.
15 . The method of claim 1 , wherein an emission wavelength of the quantum dot is in a range of about 400 nm to about 490 nm.
16 . An optical member comprising the quantum dot of claim 1 .
17 . An electronic device comprising the quantum dot of claim 1 .
18 . The electronic device of claim 17 , further comprising:
a light source, the light source being configured to emit a path of light; and
a color conversion member arranged in the path of light,
wherein the color conversion member comprises the quantum dot.
19 . The electronic device of claim 17 , further comprising a light-emitting element comprising:
a first electrode;
a second electrode facing the first electrode; and
an emission layer between the first electrode and the second electrode,
wherein the light-emitting element comprises the quantum dot.
20 . The method of claim 8 , wherein the purifying of the first particle further comprises
treating the first particle with an oxide film removing agent comprising HF after removing the unreacted quantum dot composition, and
removing the oxide film formed on the surface of the first particle.