IP Library › Granted Patent US 12709787
Granted Patent B2
US 12709787 · App. 18/479,526 · Granted Aug 18, 2026

Strain resistance film, physical quantity sensor, and method for manufacturing the strain resistance film

Inventors: Kohei Nawaoka (Tokyo, JP); Ken Unno (Tokyo, JP); Tetsuya Sasahara (Tokyo, JP); Masanori Kobayashi (Tokyo, JP); Tetsuo Hata (Tokyo, JP)
Assignee: TDK CORPORATION
C22C27/06G01B7/18
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Quick Facts
Patent No.
US 12709787
App. No.
18/479,526
Granted
Aug 18, 2026
Kind
B2
Abstract

A strain resistance film containing a composition represented by Cr 100-x-y-z Al x N y O z , satisfying 5≤x≤50, 0.1≤y≤20, 0.1≤z≤17, and y+z≤25.

Claims (7)

1 . A strain resistance film comprising a composition represented by Cr 100-x-y-z Al x N y O z , satisfying 5≤x≤50, 0.1≤y≤20, 0.1≤z≤17, and y+z≤25.

2 . The strain resistance film according to claim 1 , having a film thickness of 10 nm or more.

3 . A physical quantity sensor comprising the strain resistance film according to claim 1 .

4 . A manufacturing method of the strain resistance film according to claim 1 , the manufacturing method being a thin film method, wherein during the thin film method, k-factor and temperature coefficient of resistance of the strain resistance film are controlled by controlling an oxygen amount and a nitrogen amount in an atmosphere gas.

5 . The strain resistance film according to claim 1 , wherein y+z is 12.0 to 20.0.

6 . The strain resistance film according to claim 1 , wherein y+z is 14.0 to 20.0.

7 . The strain resistance film according to claim 1 , wherein y+z is 1.8 to 10.7.