Substrate processing method
A substrate processing method of forming a film on a substrate that contains a bond between a first element and a second element and has a recess, the substrate processing method includes: preparing the substrate; modifying a surface in the recess by generating an active species of a first processing gas and exposing the substrate to the active species; and forming a flowable film in the recess. A ratio of the first element to the second element in the surface in the recess after the modifying the surface in the recess is higher than a ratio of the first element to the second element on the surface in the recess before the modifying the surface in the recess.
1 . A substrate processing method of forming a film on a substrate that contains a bond between a first element and a second element and has a recess, the substrate processing method comprising:
preparing the substrate;
modifying a surface in the recess by generating an active species of a first processing gas and exposing the substrate to the active species; and
forming a flowable film in the recess,
wherein a ratio of the first element to the second element in the surface in the recess after the modifying the surface in the recess is higher than a ratio of the first element to the second element on the surface in the recess before the modifying the surface in the recess,
wherein the modifying the surface in the recess includes modifying a side surface in the recess so as to reduce a magnitude of a force perpendicular to the side surface acting between the side surface and molecules of the flowable film, and
wherein the forming the flowable film in the recess includes supplying a second processing gas to form the flowable film and flowing the flowable film into the recess of the substrate.
2 . The substrate processing method of claim 1 , wherein the active species includes ions or radicals of the first processing gas.
3 . The substrate processing method of claim 2 , wherein the modifying the surface in the recess includes breaking the bond between the first element and the second element with the active species.
4 . The substrate processing method of claim 3 , wherein the modifying the surface in the recess includes sputtering the second element with the active species.
5 . The substrate processing method of claim 4 , wherein the first element includes one of Si, Ti, Al, or Ta, and the second element includes one or more of O, N, or C.
6 . The substrate processing method of claim 4 , wherein a surface of the substrate having the recess is made of SiO 2 .
7 . The substrate processing method of claim 4 , wherein the first processing gas includes one or more of an inert gas or a gas containing hydrogen atoms.
8 . The substrate processing method of claim 4 , further comprising curing the flowable film.
9 . The substrate processing method of claim 8 , wherein the forming the flowable film in the recess and curing the flowable film are alternately repeated, such that a film obtained by curing the flowable film is formed in the recess.
10 . The substrate processing method of claim 1 , wherein the first element includes one of Si, Ti, Al, or Ta, and the second element includes one or more of O, N, or C.
11 . The substrate processing method of claim 1 , wherein a surface of the substrate having the recess is made of SiO 2 .
12 . The substrate processing method of claim 1 , wherein the first processing gas includes one or more of an inert gas or a gas containing hydrogen atoms.
13 . The substrate processing method of claim 1 , further comprising curing the flowable film.
14 . The substrate processing method of claim 13 , wherein the forming the flowable film in the recess and curing the flowable film are alternately repeated, such that a film obtained by curing the flowable film is formed in the recess.