IP Library Granted Patent US 12710310
Granted Patent B2
US 12710310 · App. 18/334,919 · Granted Aug 18, 2026

Nanowire avalanche photodetector

Inventor: Brett Alexander Yurash (Venice, CA)
Assignee: The Boeing Company
G01J1/42H10N60/84G01J2001/442
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Quick Facts
Patent No.
US 12710310
App. No.
18/334,919
Granted
Aug 18, 2026
Kind
B2
Abstract

A nanowire photodetection system comprising an optical waveguide and superconducting nanowires. The optical waveguide is located on a substrate. The superconducting nanowires are electrically connected in parallel to connector wires located on both sides of the optical waveguide. A set of the superconducting nanowires cross a width of the optical waveguide and absorb a photon in the optical waveguide.

Claims (32)

1 . A nanowire photodetection system comprising:

an optical waveguide on a substrate; and

superconducting nanowires electrically connected in parallel to connector wires located on both sides of the optical waveguide on the substrate, wherein a set of the superconducting nanowires cross a width of the optical waveguide and absorb a photon in the optical waveguide, wherein a subset of the superconducting nanowires does not cross the width of the optical waveguide and does not have an active sensor area over the width of the optical waveguide.

2 . The nanowire photodetection system of claim 1 further comprising:

a set of tuning electrodes, wherein the set of tuning electrodes operate to change critical currents for a number of the superconducting nanowires.

3 . The nanowire photodetection system of claim 2 , wherein a set of tuning electrodes is positioned relative to a superconducting nanowire in the superconducting nanowires and operates to create an electric field with a strength in a region encompassing a portion of the superconducting nanowire such that a critical current for superconducting nanowire changes in response to the electric field.

4 . The nanowire photodetection system of claim 2 , wherein a first superconducting nanowire in the superconducting nanowires has a different width from a second superconducting nanowires and wherein at least one of the superconducting nanowire or the superconducting nanowire are associated with the set of electrodes.

5 . The nanowire photodetection system of claim 3 , wherein the set of tuning electrodes operate to equalize current flow through the superconducting nanowires.

6 . The nanowire photodetection system of claim 1 , wherein the superconducting nanowires are electrically connected in parallel by having first ends connected to a first connector wire and second ends connected to a second connector wire.

7 . The nanowire photodetection system of claim 1 , wherein each of the superconducting nanowires has an active sensor area over width of the optical waveguide.

8 . The nanowire photodetection system of claim 1 , wherein the subset of the of the superconducting nanowires does not absorb photons in the optical waveguide.

9 . The nanowire photodetection system of claim 1 further comprising:

a reflector in the optical waveguide located after a superconducting nanowire in the superconducting nanowires in a direction of travel of a photon in the optical waveguide.

10 . The nanowire photodetection system of claim 6 further comprising:

a choke inductor formed in a first connector wire in the connector wires after a superconducting nanowire in the superconducting nanowires, wherein the choke inductor impedes current flow such that current flows through the superconducting nanowires in response to one of the superconducting nanowires going into a normal state from detecting a photon.

11 . The nanowire photodetection system of claim 1 further comprising:

a cladding on at least one side of the optical waveguide, wherein a portion of the superconducting nanowires are substantially planar above the optical waveguide and on a region adjacent to the optical waveguide.

12 . The nanowire photodetection system of claim 1 further comprising:

a first stage comprising a first number of the superconducting nanowires crossing the optical waveguide, wherein the number of the superconducting nanowires has a first number of active sensor areas; and

a second stage comprising a second number of the superconducting nanowires crossing the optical waveguide, wherein the second number of the superconducting nanowires have a second number of active sensor areas, wherein the second number of superconducting nanowires is less than or equal to the first number of superconducting nanowires.

13 . The nanowire photodetection system of claim 12 further comprising:

a first choke inductor formed in a connector wire in the connector wires connecting the first stage to second stage; and

a second choke inductor formed in a connector wire in the connector wires connected to the second stage.

14 . The nanowire photodetection system of claim 1 , wherein a superconducting nanowire in the superconducting nanowires is connected to a first connector wire and a second connector wire without crossing the optical waveguide.

15 . The nanowire photodetection system of claim 1 , wherein a portion of a superconducting nanowire in the superconducting nanowires extends in a direction of travel of a photon in the optical waveguide.

16 . The nanowire photodetection system of claim 1 , wherein a portion of the connector wires taper in width to the superconducting nanowires.

17 . The nanowire photodetection system of claim 1 , wherein the connector wires have different heights in regions adjacent to the optical waveguide.

18 . The nanowire photodetection system of claim 1 , wherein the connector wires are superconducting connector wires.

19 . A nanowire photodetection system comprising:

an optical waveguide on a substrate;

superconducting nanowires electrically connected in parallel to superconducting connector wires located on both sides of the optical waveguide on the substrate, wherein a set of the superconducting nanowires cross a width of the optical waveguide and absorb a photon in the optical waveguide; and

a set of tuning electrodes, wherein the tuning electrodes operate to change critical currents for the superconducting nanowires, wherein a subset of the superconducting nanowires does not cross the width of the optical waveguide and does not have an active sensor area over the width of the optical waveguide.