Magnetoresistive sensor having a shielding element with vortex magnetization

1 . A magnetoresistive sensor, comprising:

a magnetoresistive element having a layer stack that has a free layer, wherein the free layer has a magnetization that is changeable in a layer plane and that varies depending on a field strength of an external magnetic field acting parallel to the layer plane; and

a shielding element that is configured, in a presence of the external magnetic field, to generate a linear magnetic stray field that is directed counter to the external magnetic field,

wherein the shielding element has a first vortex magnetization with a first closed flux in the layer plane, and

wherein the free layer has a vortex magnetization with a closed flux in the layer plane.

2 . The magnetoresistive sensor as claimed in claim 1 , wherein the shielding element is arranged opposite the free layer in a direction perpendicular to the layer plane.

3 . The magnetoresistive sensor as claimed in claim 1 , wherein the shielding element has a geometric shape that is configured to generate the first vortex magnetization in the shielding element.

4 . The magnetoresistive sensor as claimed in claim 1 , wherein the shielding element is galvanically coupled to magnetoresistive element.

5 . The magnetoresistive sensor as claimed in claim 1 , wherein the magnetoresistive sensor has an electrode structure that is configured to make electrical contact with the magnetoresistive element, and

wherein the shielding element adjoins the electrode structure directly and is galvanically coupled directly to the electrode structure.

6 . The magnetoresistive sensor as claimed in claim 1 , wherein the shielding element is spaced from the magnetoresistive element by a distance that is approximately 0.1 to 1 times as great as a diameter of the shielding element.

7 . The magnetoresistive sensor as claimed in claim 1 , further comprising:

a substrate having a metallization layer forming a metal contact, wherein the magnetoresistive element is galvanically coupled to the metallization layer,

wherein the magnetoresistive element faces a first surface of the metallization layer,

wherein the shielding element faces the first surface of the metallization layer,

wherein the magnetoresistive element is arranged between the metallization layer and the shielding element, and

wherein the magnetoresistive element and the shielding element are arranged opposite one another, such that the magnetoresistive element and the shielding element overlap, when viewed in a plan view.

8 . The magnetoresistive sensor as claimed in claim 1 , wherein the magnetoresistive sensor has an electrode structure that is configured to make electrical contact with the magnetoresistive element, and

wherein the shielding element is galvanically coupled to the electrode structure indirectly via an electrically conductive layer.

9 . The magnetoresistive sensor as claimed in claim 1 , wherein the shielding element is electrically isolated from the magnetoresistive element.

10 . The magnetoresistive sensor as claimed in claim 9 , wherein a dielectric layer is arranged between the magnetoresistive element and the shielding element.

11 . The magnetoresistive sensor as claimed in claim 1 , further comprising:

a substrate having a metallization layer forming a metal contact, wherein the magnetoresistive element is galvanically coupled to the metallization layer,

wherein the magnetoresistive element faces a first surface of the metallization layer,

wherein the shielding element faces second surface of the metallization layer, the second surface being opposite to the first surface,

wherein the metallization layer is arranged between the magnetoresistive element and the shielding element, and

wherein the magnetoresistive element and the shielding element are arranged opposite one another, such that the magnetoresistive element and the shielding element overlap, when viewed in a plan view.

12 . The magnetoresistive sensor as claimed in claim 11 , wherein the shielding element is arranged directly on the second surface of the metallization layer and is galvanically coupled to the metallization layer.

13 . The magnetoresistive sensor as claimed in claim 11 , wherein a dielectric layer is arranged between the shielding element and the second surface of the metallization layer.

14 . The magnetoresistive sensor as claimed in claim 1 , further comprising:

a substrate having a metallization layer forming a metal contact, wherein the shielding element is galvanically coupled to the metallization layer and the magnetoresistive element,

wherein the shielding element is arranged between the metallization layer and the magnetoresistive element, and

wherein the magnetoresistive element and the shielding element are arranged opposite one another, such that the magnetoresistive element and the shielding element overlap, when viewed in a plan view.

15 . The magnetoresistive sensor as claimed in claim 14 , wherein the substrate is configured as a multi-layer substrate, and

wherein the shielding element and the magnetoresistive element are each integrated into different layers of the multi-layer substrate.

16 . The magnetoresistive sensor as claimed in claim 1 , wherein the magnetoresistive sensor with the shielding element exhibits linear behavior in a predefined working range, and

wherein the predefined working range is greater than a linear working range of a structurally identical magnetoresistive sensor without the shielding element.

17 . The magnetoresistive sensor as claimed in claim 16 , wherein the predefined working range of the magnetoresistive sensor is at least 25% greater than the linear working range of the structurally identical magnetoresistive sensor without the shielding element.

18 . The magnetoresistive sensor as claimed in claim 16 , wherein the magnetoresistive sensor with the shielding element exhibits the linear behavior across a full range of the predefined working range.

19 . A magnetoresistive sensor, comprising:

a magnetoresistive element having a layer stack that has a free layer, wherein the free layer has a magnetization that is changeable in a layer plane and that varies depending on a field strength of an external magnetic field acting parallel to the layer plane; and

a shielding element that is configured, in a presence of the external magnetic field, to generate a linear magnetic stray field that is directed counter to the external magnetic field,

wherein the shielding element has a first vortex magnetization with a first closed flux in the layer plane,

wherein the shielding element has a layer thickness between 50 nm and 500 nm.

20 . A magnetoresistive sensor, comprising:

a magnetoresistive element having a layer stack that has a free layer, wherein the free layer has a magnetization that is changeable in a layer plane and that varies depending on a field strength of an external magnetic field acting parallel to the layer plane; and

a shielding element that is configured, in a presence of the external magnetic field, to generate a linear magnetic stray field that is directed counter to the external magnetic field,

wherein the shielding element has a first vortex magnetization with a first closed flux in the layer plane,

wherein, without the external magnetic field, the first vortex magnetization is in equilibrium, and

wherein, in the presence of the external magnetic field, the first vortex magnetization shifts such that the shielding element generates the linear magnetic stray field outside of the shielding element to attenuate the external magnetic field.