Photonic semiconductor device, photonic semiconductor package using the same and manufacturing method thereof

1 . A manufacturing method of a photonic semiconductor device, comprising:

providing a light-emitting component, wherein the light-emitting component comprises a gain medium layer, a first contact layer and a first optical coupling layer stacked to each other, and the first optical coupling layer has a first taper portion;

providing a photonic integrated circuit, wherein the photonic integrated circuit comprises a second optical coupling layer comprising a second taper portion; and

disposing the light-emitting component on the photonic integrated circuit, wherein the light-emitting component and the photonic integrated circuit are stacked in a stacking direction, and the first taper portion and the second taper portion overlap in the stacking direction;

wherein in providing the photonic integrated circuit, the photonic integrated circuit comprises a FEOL (Front End of Line) circuit layer having a recess; the manufacturing method further comprises:

forming an insulation layer to encapsulate the light-emitting component;

in disposing the light-emitting component on the photonic integrated circuit, a portion of the insulation layer is located within the recess of the photonic integrated circuit.

2 . The manufacturing method as claimed in claim 1 , further comprising:

disposing the light-emitting component on a carrier through a bonding layer; and

forming the insulation layer on the carrier to encapsulate the light-emitting component, wherein the insulation layer comprises a first insulation portion and a second insulation portion, and the second insulation portion protrudes with respect to the first insulation portion;

wherein in disposing the light-emitting component on the photonic integrated circuit, the second insulation portion is located within the recess of the photonic integrated circuit.

3 . The manufacturing method as claimed in claim 1 , wherein in providing the light-emitting component, the gain medium layer, the first contact layer and the first optical coupling layer are formed on a substrate; the manufacturing method further comprising:

disposing the light-emitting component on a carrier through a bonding layer; and

removing the substrate from the light-emitting component.

4 . The manufacturing method as claimed in claim 1 , wherein in providing the light-emitting component, the first contact layer is a P-type contact, the first optical coupling layer is a waveguide layer, the light-emitting component further comprises a N-type contact, and the P-type contact and the N-type contact are disposed on the opposite two sides of the waveguide layer.

5 . The manufacturing method as claimed in claim 1 , wherein in providing the light-emitting component, the first contact layer and the first optical coupling layer are located at the same side of the gain medium layer.

6 . The manufacturing method as claimed in claim 2 , where in disposing the light-emitting component on the photonic integrated circuit, the photonic integrated circuit has a surface, the recess is recessed with respect to the surface, the first optical coupling layer and the second optical coupling layer are disposed adjacent to the surface.

7 . The manufacturing method as claimed in claim 1 , wherein the first optical coupling layer is exposed from the photonic semiconductor device.

8 . The manufacturing method as claimed in claim 2 , wherein in forming the insulation layer on the carrier to encapsulate the light-emitting component, the insulation layer encapsulates the gain medium layer and the first contact layer, but exposes the first optical coupling layer.

9 . The manufacturing method as claimed in claim 8 , wherein in forming the insulation layer on the carrier to encapsulate the light-emitting component, the insulation layer has an insulation surface, the first optical coupling layer has a coupling surface, and the insulation surface and the coupling surface are flush with each other.

10 . The manufacturing method as claimed in claim 1 , wherein in providing the light-emitting component, the first contact layer is a P-type contact, and the first optical coupling layer is a N-type contact.

11 . The manufacturing method as claimed in claim 10 , wherein in providing the light-emitting component, the P-type contact and the N-type contact are located at the opposite two sides of the gain medium layer.

12 . The manufacturing method as claimed in claim 1 , wherein in providing the light-emitting component, the gain medium layer has a coupling portion, the first taper portion protrudes with respect to the coupling portion.

13 . A manufacturing method of a photonic semiconductor device, comprising:

providing a light-emitting component, wherein the light-emitting component comprises a gain medium layer and a first optical coupling layer having a first taper portion, the gain medium layer has a coupling portion, and the first taper portion protrudes with respect to the coupling portion;

providing a photonic integrated circuit, wherein the photonic integrated circuit comprises a second taper portion; and

disposing the light-emitting component on the photonic integrated circuit, wherein the light-emitting component and the photonic integrated circuit are stacked in a stacking direction, and the first taper portion and the second taper portion overlap in the stacking direction;

wherein in providing the photonic integrated circuit, the photonic integrated circuit comprises a FEOL circuit layer having a recess; the manufacturing method further comprises:

forming an insulation layer to encapsulate the light-emitting component;

in disposing the light-emitting component on the photonic integrated circuit, a portion of the insulation layer is located within the recess of the photonic integrated circuit.

14 . The manufacturing method as claimed in claim 13 , further comprising:

disposing the light-emitting component on a carrier through a bonding layer; and

forming an insulation layer on the carrier to encapsulate the light-emitting component, wherein the insulation layer comprises a first insulation portion and a second insulation portion, and the second insulation portion protrudes with respect to the first insulation portion;

wherein in disposing the light-emitting component on the photonic integrated circuit, the second insulation portion is located within the recess of the photonic integrated circuit.

15 . The manufacturing method as claimed in claim 13 , wherein in providing the light-emitting component, the gain medium layer and the first optical coupling layer are formed on a substrate; the manufacturing method further comprising:

disposing the light-emitting component on a carrier through a bonding layer; and

removing the substrate from the light-emitting component.

16 . The manufacturing method as claimed in claim 14 , where in disposing the light-emitting component on the photonic integrated circuit, the photonic integrated circuit has a surface, the recess is recessed with respect to the surface, the first optical coupling layer and a second optical coupling layer of the photonic integrated circuit are disposed adjacent to the surface.

17 . The manufacturing method as claimed in claim 13 , wherein the first optical coupling layer is exposed from the photonic semiconductor device.

18 . A manufacturing method of a photonic semiconductor device, comprising:

providing a light-emitting component, wherein the light-emitting component comprises a gain medium layer, a P-type contact, a N-type contact and a waveguide layer having a first taper portion, the gain medium layer has a coupling portion, the first taper portion protrudes with respect to the coupling portion, and the P-type contact and the N-type contact are disposed on the opposite two sides of the waveguide layer;

providing a photonic integrated circuit, wherein the photonic integrated circuit comprises a second taper portion; and

disposing the light-emitting component on the photonic integrated circuit, wherein the light-emitting component and the photonic integrated circuit are stacked in a stacking direction, and the first taper portion and the second taper portion overlap in the stacking direction;

wherein in providing the photonic integrated circuit, the photonic integrated circuit comprises a FEOL circuit layer having a recess; the manufacturing method further comprises:

forming an insulation layer to encapsulate the light-emitting component;

in disposing the light-emitting component on the photonic integrated circuit, a portion of the insulation layer is located within the recess of the photonic integrated circuit.

19 . The manufacturing method as claimed in claim 18 , further comprising:

disposing the light-emitting component on a carrier through a bonding layer; and

forming the insulation layer on the carrier to encapsulate the light-emitting component, wherein the insulation layer comprises a first insulation portion and a second insulation portion, and the second insulation portion protrudes with respect to the first insulation portion;

wherein in disposing the light-emitting component on the photonic integrated circuit, the second insulation portion is located within the recess of the photonic integrated circuit.

20 . The manufacturing method as claimed in claim 18 , wherein in providing the light-emitting component, the P-type contact and the waveguide layer are located at the same side of the gain medium layer.