Structures for a quantum sensor
Structures for a quantum sensor and methods of forming such structures. The structure comprises a first waveguide core, a second waveguide core, and a sensor layer laterally between the first waveguide core and the second waveguide core. The first waveguide core is laterally coupled to the sensor layer, the second waveguide core is laterally coupled to the sensor layer, and the sensor layer comprises a material including a plurality of defect centers capable of photoluminescence.
1 . A structure for a photonic device, the structure comprising:
a first waveguide core;
a second waveguide core;
a sensor layer laterally between the first waveguide core and the second waveguide core, the first waveguide core laterally coupled to the sensor layer, the second waveguide core laterally coupled to the sensor layer, and the sensor layer comprising a material including a plurality of defect centers capable of photoluminescence; and
a microwave source comprising an inductor that is positioned over the sensor layer, the inductor configured to generate microwave radiation,
wherein the sensor layer has a first area, the inductor has a second area, and the second area is greater than or equal to the first area of the sensor layer.
2 . The structure of claim 1 wherein the first waveguide core and the second waveguide core comprise silicon nitride.
3 . The structure of claim 1 wherein the first waveguide core and the second waveguide core comprise silicon.
4 . The structure of claim 1 wherein the sensor layer, the first waveguide core, and the second waveguide core are arranged in a same plane.
5 . The structure of claim 1 wherein the material of the sensor layer is diamond, and the defect centers are nitrogen-vacancy centers.
6 . The structure of claim 5 wherein the sensor layer has a first non-overlapping relationship with the first waveguide core.
7 . The structure of claim 6 wherein the sensor layer has a second non-overlapping relationship with the second waveguide core.
8 . The structure of claim 1 further comprising:
a laser source optically coupled by the first waveguide core to the sensor layer.
9 . The structure of claim 8 further comprising:
a photodetector optically coupled by the second waveguide core to the sensor layer.
10 . The structure of claim 1 further comprising:
a photodetector optically coupled by the second waveguide core to the sensor layer.
11 . The structure of claim 10 wherein the photodetector includes a semiconductor layer comprising germanium.
12 . The structure of claim 1 wherein the sensor layer has a first non-overlapping relationship with the first waveguide core.
13 . The structure of claim 12 wherein the sensor layer has a second non-overlapping relationship with the second waveguide core.
14 . The structure of claim 1 further comprising:
a semiconductor substrate; and
a dielectric layer between the semiconductor substrate and the first waveguide core, the second waveguide core, and the sensor layer.
15 . The structure of claim 14 further comprising:
a back-end-of-line stack on the semiconductor substrate,
wherein the inductor is arranged in the back-end-of-line stack.
16 . The structure of claim 15 wherein the dielectric layer has a planar top surface, and the sensor layer, the first waveguide core, and the second waveguide core are arranged in a same plane on the planar top surface.
17 . The structure of claim 15 further comprising:
a laser source optically coupled by the first waveguide core to the sensor layer.
18 . The structure of claim 17 further comprising:
a photodetector optically coupled by the second waveguide core to the sensor layer.
19 . A method of forming a structure for a photonic device, the method comprising:
forming a first waveguide core and a second waveguide core;
forming a sensor layer laterally between the first waveguide core and the second waveguide core; and
forming a microwave source comprising an inductor that is positioned over the sensor layer,
wherein the first waveguide core is laterally coupled to the sensor layer, the second waveguide core is laterally coupled to the sensor layer, the sensor layer comprises a material including a plurality of defect centers capable of photoluminescence, the inductor is configured to generate microwave radiation, the sensor layer has a first area, the inductor has a second area, and the second area is greater than or equal to the first area of the sensor layer.
20 . The method of claim 19 wherein the material of the sensor layer comprises diamond, and forming the sensor layer laterally between the first waveguide core and the second waveguide core comprises:
depositing the diamond with plasma-assisted chemical vapor deposition; and
forming nitrogen-vacancy centers as the defect centers in the diamond.