Light modulation element, beam steering device including the same, and electronic device including beam steering device

1 . A light modulation element comprising:

a first contact layer;

a second contact layer;

an active layer provided between the first contact layer and the second contact layer in a vertical direction;

a first contact plug provided between the first contact layer and the active layer in the vertical direction;

a second contact plug provided between the second contact layer and the active layer; and

a first insulation film provided between the first contact layer and the active layer in the vertical direction and adjacent to the first contact plug in a horizontal direction,

wherein a width of the first contact plug and a width of the second contact plug is less than a width of the active layer in the horizontal direction.

2 . The light modulation element of claim 1 , wherein the active layer comprises:

a plurality of quantum dot layers stacked in a direction perpendicular to an upper surface of the first contact layer; and

a plurality of well layers provided respectively on the plurality of quantum dot layers,

wherein the width of the active layer is less than a wavelength of light incident on the active layer, and a band gap energy of the plurality of quantum dot layers is less than a band gap energy of the plurality of well layers.

3 . The light modulation element of claim 1 , further comprising:

a first insulation film provided between the first contact layer and the active layer; and

a second insulation film provided between the second contact layer and the active layer,

wherein the first insulation film is provided adjacent to the first contact plug, and

wherein the second insulation film is provided adjacent to the second contact plug.

4 . The light modulation element of claim 3 , wherein a refractive index of the first insulation film and a refractive index of the second insulation film are lower than a refractive index of the first contact plug and a refractive index of the second contact plug, respectively.

5 . The light modulation element of claim 3 , further comprising a passivation film provided on the first contact layer,

wherein the passivation film is provided adjacent to the first contact layer, the first insulation film, the active layer, the second insulation film, and the second contact layer.

6 . The light modulation element of claim 5 , wherein the first insulation film and the second insulation film comprise a first oxide, and

wherein the passivation film comprises an electrically insulating material which is different from the first oxide.

7 . The light modulation element of claim 2 , further comprising:

a first charge injection layer provided between the active layer and the first contact plug; and

a second charge injection layer provided between the active layer and the second contact plug,

wherein a width of the first charge injection layer and a width of the second charge injection layer are greater than the width of the first contact plug and the width of the second contact plug, respectively.

8 . The light modulation element of claim 7 , wherein the first contact layer and the first charge injection layer comprise gallium arsenide (GaAs) of a first conductive type,

wherein the second contact layer and the second charge injection layer comprise GaAs of a second conductive type that is different from the first conductive type,

wherein the first contact plug comprises aluminum gallium arsenide (AlGaAs) of the first conductive type, and

wherein the second contact plug comprises AlGaAs of the second conductive type.

9 . The light modulation element of claim 7 , wherein the first contact layer, the first contact plug, and the first charge injection layer comprise silicon (Si) of a first conductive type,

wherein the second contact layer, the second contact plug, and the second charge injection layer comprise Si of a second conductive type that is different from the first conductive type,

wherein the active layer comprises intrinsic Si, and

wherein the plurality of quantum dot layers comprise germanium (Ge).

10 . The light modulation element of claim 7 , wherein a conductive type of the first contact layer, the first contact plug, and the first charge injection layer is an n-type,

wherein a conductive type of the second contact layer, the second contact plug, and the second charge injection layer is a p-type,

wherein the active layer is intrinsic, and

wherein a width of the first contact layer is greater than a width of the second contact layer.

11 . The light modulation element of claim 10 , further comprising:

a p-type electrode provided on the second contact layer.

12 . The light modulation element of claim 7 , wherein a conductive type of the first contact layer, the first contact plug, and the first charge injection layer is a p-type,

wherein a conductive type of the second contact layer, the second contact plug, and the second charge injection layer is an n-type,

wherein the active layer is intrinsic, and

wherein a width of the first contact layer is greater than a width of the second contact layer.

13 . The light modulation element of claim 7 , further comprising:

an n-type electrode provided on the second contact layer.

14 . The light modulation element of claim 2 , wherein each of the plurality of quantum dot layers comprises a plurality of quantum dot patterns.

15 . The light modulation element of claim 2 , wherein the active layer further comprises a plurality of barrier layers, and

wherein a quantum dot layer and a well layer adjacent to each other among the plurality of quantum dot layers and the plurality of well layers are provided between a pair of adjacent barrier layers among the plurality of barrier layers.

16 . The light modulation element of claim 15 , wherein the plurality of quantum dot layers comprise intrinsic indium arsenide (InAs),

wherein the plurality of well layers comprise intrinsic indium gallium arsenide (InGaAs), and

wherein the plurality of barrier layers comprise intrinsic GaAs.

17 . The light modulation element of claim 1 , wherein the second contact layer comprises:

a high-concentration doping layer; and

a low-concentration doping layer provided between the high-concentration doping layer and the second contact plug,

wherein the high-concentration doping layer and the low-concentration doping layer have the same conductivity, and

wherein a doping concentration of the high-concentration doping layer is higher than a doping concentration of the low-concentration doping layer.

18 . The light modulation element of claim 1 , further comprising:

a substrate provided on the first contact plug opposite to the first contact layer; and

a reflection layer provided between the substrate and the first contact layer.

19 . The light modulation element of claim 18 , wherein the reflection layer comprises a distributed Bragg reflector (DBR) that comprises a plurality of low-refractive-index layers and a plurality of high-refractive-index layers that are alternately stacked on one another.

20 . A beam steering device comprising:

a first light modulation element; and

a second light modulation element,

wherein each of the first light modulation element and the second light modulation element comprises:

a first contact layer;

a plurality of nanostructures provided on the first contact layer in a vertical direction; and

a plurality of second contact layers respectively provided on the plurality of nanostructures in the vertical direction,

wherein each of the plurality of nanostructures comprises a first contact plug, an active layer provided on the first contact plug, and a second contact plug provided on the active layer,

wherein a first insulation film is provided between the first contact layer and the active layer in the vertical direction and adjacent to the first contact plug in a horizontal direction, and

wherein a width of the first contact plug and a width of the second contact plug is less than a width of the active layer in the horizontal direction.

21 . The beam steering device of claim 20 , wherein the first contact layer of the first light modulation element and the first contact layer of the second light modulation element are configured to receive a reference voltage,

wherein each of the plurality of second contact layers of the first light modulation element is configured to receive a first voltage, and

wherein each of the plurality of second contact layers of the second light modulation element is configured to receive a second voltage that is different from the first voltage.

22 . The beam steering device of claim 20 , wherein the first contact layer of the first light modulation element and the first contact layer of the second light modulation element are connected to each other.

23 . The beam steering device of claim 22 , further comprising a substrate provided on the plurality of nanostructures of the first light modulation element opposite to the first contact layer of the first light modulation element,

wherein the substrate extends onto the first contact layer of the second light modulation element.

24 . The beam steering device of claim 20 , wherein the first contact layer of the first light modulation element and the first contact layer of the second light modulation element are spaced apart from each other.

25 . The beam steering device of claim 24 , further comprising a substrate provided on the plurality of nanostructures of the first light modulation element opposite to the first contact layer of the first light modulation element,

wherein the substrate extends onto the first contact layer of the second light modulation element.

26 . The beam steering device of claim 24 , wherein the plurality of second contact layers of the first light modulation element and the plurality of second contact layers of the second light modulation element are configured to receive a reference voltage,

wherein the first contact layer of the first light modulation element is configured to receive a first voltage, and

wherein the first contact layer of the second light modulation element is configured to receive a second voltage that is different from the first voltage.

27 . The beam steering device of claim 20 , wherein each of the first light modulation element and the second light modulation element further comprises:

an electrode provided on the plurality of second contact layers,

wherein the electrode is electrically connected to the plurality of second contact layers.

28 . The beam steering device of claim 20 , wherein the active layer comprises:

a plurality of quantum dot layers stacked in a direction perpendicular to an upper surface of the first contact layer; and

a plurality of well layers respectively provided on the plurality of quantum dot layers,

wherein the width of the active layer is less than a wavelength of light incident on the plurality of nanostructures, and

wherein a band gap energy of the plurality of quantum dot layers is less than a band gap energy of the plurality of well layers.

29 . The beam steering device of claim 20 , wherein each of the plurality of nanostructures of the first light modulation element and the plurality of nanostructures of the second light modulation element further comprises:

a first insulation film provided adjacent to the first contact plug; and

a second insulation film provided adjacent to the second contact plug.

30 . The beam steering device of claim 29 , wherein each of the first light modulation element and the second light modulation element further comprises:

a passivation film provided on the first contact layer,

wherein the passivation film provided adjacent to the plurality of nanostructures.

31 . The beam steering device of claim 30 , further comprising

a substrate provided on the plurality of nanostructures of the first light modulation element opposite to the first contact layer of the first light modulation element; and

a reflection layer provided between the substrate and the first contact layer of the first light modulation element,

wherein the substrate and the reflection layer extend onto the first contact layer of the second light modulation element.

32 . The beam steering device of claim 31 , wherein the reflection layer comprises a distributed Bragg reflector (DBR) comprising a plurality of low-refractive-index layers and a plurality of high-refractive-index layers alternately stacked on one another.

33 . The beam steering device of claim 20 , wherein each of the plurality of nanostructures of the first light modulation element and the plurality of nanostructures of the second light modulation element further comprises:

a first charge injection layer provided between the active layer and the first contact plug; and

a second charge injection layer provided between the active layer and the second contact plug,

wherein a width of the first charge injection layer and a width of the second charge injection layer are respectively greater than the width of the first contact plug and the width the second contact plug.

34 . An electronic device comprising:

a light source configured to emit light;

a beam steering device configured to adjust a traveling direction of the light emitted from the light source and direct the light to an object;

a sensor configured to receive light reflected from the object that is irradiated by the light; and

a processor configured to analyze the light received by the sensor,

wherein the beam steering device comprises a first light modulation element and a second light modulation element,

wherein each of the first light modulation element and the second light modulation element comprises:

a first contact layer;

a plurality of nanostructures provided on the first contact layer in a vertical direction; and

a plurality of second contact layers respectively provided on the plurality of nanostructures in the vertical direction,

wherein each of the plurality of nanostructures comprises a first contact plug, an active layer provided on the first contact plug, and a second contact plug provided on the active layer,

wherein a first insulation film is provided between the first contact layer and the active layer in the vertical direction and adjacent to the first contact plug in a horizontal direction, and

wherein a width of the first contact plug and a width of the second contact plug is less than a width of the active layer in the horizontal direction.