Piezoelectric sensor and haptic feedback apparatus

1 . A piezoelectric sensor, comprising:

a base substrate;

at least one piezoelectric device located on the base substrate;

an organic insulation layer located on one side, facing away from the base substrate, of the piezoelectric device, wherein the organic insulation layer is provided with a first via hole, and an orthographic projection, on the base substrate, of the first via hole overlaps an orthographic projection, on the base substrate, of the piezoelectric device;

an inorganic insulation layer located on one side, facing away from the base substrate, of the organic insulation layer, wherein the inorganic insulation layer does not overlap at least a portion of the first via hole; and

a wiring layer located on one side, facing away from the base substrate, of the inorganic insulation layer, wherein the wiring layer comprises a wire, one end of the wire being electrically connected to the piezoelectric device by means of at least the portion of the first via hole;

wherein the piezoelectric device comprises: a first electrode between the base substrate and the organic insulation layer, a piezoelectric layer between the first electrode and the organic insulation layer, and a second electrode between the piezoelectric layer and the organic insulation layer; wherein

the inorganic insulation layer covers a side wall of the first via hole and the second electrode exposed out of the first via hole, a portion, covering the second electrode, of the inorganic insulation layer is provided with at least one second via hole, and the wiring layer is electrically connected to the second electrode by means of the first via hole and the second via hole.

2 . The piezoelectric sensor according to claim 1 , wherein at a same side wall of the first via hole, a contact boundary between the inorganic insulation layer and the second electrode is a first boundary, a contact boundary between the organic insulation layer and the second electrode is a second boundary, and a distance between the first boundary and the second boundary is greater than 30% and less than 60% of a thickness of the piezoelectric layer.

3 . The piezoelectric sensor according to claim 1 , further comprising: a binding electrode arranged on the same layer as the first electrode, wherein the binding electrode is arranged near an edge of the base substrate, the binding electrode is configured to be connected to a drive voltage input end, and a voltage signal input from the drive voltage input end is an alternating voltage signal; an-other end of the wire is electrically connected to the binding electrode by means of a third via hole provided on the inorganic insulation layer and the organic insulation layer; and

the piezoelectric sensor further comprises: a lead electrode arranged on the same layer as the first electrode, wherein the lead electrode is electrically connected to the first electrode, the lead electrode is configured to be connected to an earth voltage input end, and a voltage signal input from the earth voltage input end is an earth voltage signal.

4 . The piezoelectric sensor according to claim 3 , wherein the piezoelectric sensor comprises multiple piezoelectric devices, the multiple piezoelectric devices are arrayed on one side of the base substrate, first electrodes of piezoelectric devices in the same column are in communication with one another, and second electrodes of the piezoelectric devices in the same column are all connected to the same wire of the wiring layer.

5 . The piezoelectric sensor according to claim 1 , wherein the piezoelectric sensor comprises one inorganic insulation layer.

6 . The piezoelectric sensor according to claim 5 , wherein a material of the inorganic insulation layer is made of one of SiO 2 , Al 2 O 3 and Si 3 N 4 .

7 . The piezoelectric sensor according to claim 1 , wherein the inorganic insulation layer comprises at least two sub-layers that are stacked, and the two sub-layers are made of different materials.

8 . The piezoelectric sensor according to claim 7 , wherein materials of the sub-layers are made of one of SiO 2 , Al 2 O 3 and Si 3 N 4 .

9 . The piezoelectric sensor according to claim 1 , wherein the wiring layer is in a grid structure in shape, and a material of the wiring layer is made of one of Ti/Ni/Au, Ti/Au and Ti/Al/Ti.

10 . The piezoelectric sensor according to claim 1 , wherein a thickness of the inorganic insulation layer ranges from 100 nm to 300 nm.

11 . The piezoelectric sensor according to claim 1 , wherein a thickness of the piezoelectric layer ranges from 500 nm to 2000 nm.

12 . The piezoelectric sensor according to claim 1 , wherein the piezoelectric layer comprises at least one of lead zirconate titanate, aluminum nitride, zinc oxide, barium titanate, lead titanate, potassium niobate, lithium niobate, lithium tantalate and lanthanum gallium silicate.

13 . A haptic feedback apparatus, comprising a piezoelectric sensor, wherein the piezoelectric sensor comprises:

a base substrate;

at least one piezoelectric device located on the base substrate;

an organic insulation layer located on one side, facing away from the base substrate, of the piezoelectric device, wherein the organic insulation layer is provided with a first via hole, and an orthographic projection, on the base substrate, of the first via hole overlaps an orthographic projection, on the base substrate, of the piezoelectric device;

an inorganic insulation layer located on one side, facing away from the base substrate, of the organic insulation layer, wherein the inorganic insulation layer does not overlap at least a portion of the first via hole; and

a wiring layer located on one side, facing away from the base substrate, of the inorganic insulation layer, wherein the wiring layer comprises a wire, one end of the wire being electrically connected to the piezoelectric device by means of at least the portion of the first via hole;

wherein the piezoelectric device comprises: a first electrode between the base substrate and the organic insulation layer, a piezoelectric layer between the first electrode and the organic insulation layer, and a second electrode between the piezoelectric layer and the organic insulation layer; wherein

the inorganic insulation layer covers a side wall of the first via hole and the second electrode exposed out of the first via hole, a portion, covering the second electrode, of the inorganic insulation layer is provided with at least one second via hole, and the wiring layer is electrically connected to the second electrode by means of the first via hole and the second via hole.

14 . The haptic feedback apparatus according to claim 13 , wherein at a same side wall of the first via hole, a contact boundary between the inorganic insulation layer and the second electrode is a first boundary, a contact boundary between the organic insulation layer and the second electrode is a second boundary, and a distance between the first boundary and the second boundary is greater than 30% and less than 60% of a thickness of the piezoelectric layer.

15 . The haptic feedback apparatus according to claim 13 , wherein the piezoelectric sensor further comprises:

a binding electrode arranged on the same layer as the first electrode, wherein the binding electrode is arranged near an edge of the base substrate, the binding electrode is configured to be connected to a drive voltage input end, and a voltage signal input from the drive voltage input end is an alternating voltage signal; an other end of the wire is electrically connected to the binding electrode by means of a third via hole provided on the inorganic insulation layer and the organic insulation layer; and

the piezoelectric sensor further comprises: a lead electrode arranged on the same layer as the first electrode, wherein the lead electrode is electrically connected to the first electrode, the lead electrode is configured to be connected to an earth voltage input end, and a voltage signal input from the earth voltage input end is an earth voltage signal.

16 . The haptic feedback apparatus according to claim 15 , wherein the piezoelectric sensor comprises multiple piezoelectric devices, the multiple piezoelectric devices are arrayed on one side of the base substrate, first electrodes of piezoelectric devices in the same column are in communication with one another, and second electrodes of the piezoelectric devices in the same column are all connected to the same wire of the wiring layer.

17 . A piezoelectric sensor, comprising:

a base substrate;

at least one piezoelectric device located on the base substrate;

an organic insulation layer located on one side, facing away from the base substrate, of the piezoelectric device, wherein the organic insulation layer is provided with a first via hole, and an orthographic projection, on the base substrate, of the first via hole overlaps an orthographic projection, on the base substrate, of the piezoelectric device;

an inorganic insulation layer located on one side, facing away from the base substrate, of the organic insulation layer, wherein the inorganic insulation layer does not overlap at least a portion of the first via hole; and

a wiring layer located on one side, facing away from the base substrate, of the inorganic insulation layer, wherein the wiring layer comprises a wire, one end of the wire being electrically connected to the piezoelectric device by means of at least the portion of the first via hole;

wherein the piezoelectric device comprises: a first electrode between the base substrate and the organic insulation layer, a piezoelectric layer between the first electrode and the organic insulation layer, and a second electrode between the piezoelectric layer and the organic insulation layer;

the piezoelectric sensor further comprises: a binding electrode arranged on the same layer as the first electrode, wherein the binding electrode is arranged near an edge of the base substrate, the binding electrode is configured to be connected to a drive voltage input end, and a voltage signal input from the drive voltage input end is an alternating voltage signal; another end of the wire is electrically connected to the binding electrode by means of a third via hole provided on the inorganic insulation layer and the organic insulation layer; and

the piezoelectric sensor further comprises: a lead electrode arranged on the same layer as the first electrode, wherein the lead electrode is electrically connected to the first electrode, the lead electrode is configured to be connected to an earth voltage input end, and a voltage signal input from the earth voltage input end is an earth voltage signal.

18 . The piezoelectric sensor according to claim 17 , wherein at a same side wall of the first via hole, a contact boundary between the inorganic insulation layer and the second electrode is a first boundary, a contact boundary between the organic insulation layer and the second electrode is a second boundary, and a distance between the first boundary and the second boundary is greater than 30% and less than 60% of a thickness of the piezoelectric layer.

19 . The piezoelectric sensor according to claim 17 , wherein the piezoelectric sensor comprises multiple piezoelectric devices, the multiple piezoelectric devices are arrayed on one side of the base substrate, first electrodes of piezoelectric devices in the same column are in communication with one another, and second electrodes of the piezoelectric devices in the same column are all connected to the same wire of the wiring layer.

20 . The piezoelectric sensor according to claim 17 , wherein the wiring layer is in a grid structure in shape, and a material of the wiring layer is made of one of Ti/Ni/Au, Ti/Au and Ti/Al/Ti.