IP Library Granted Patent US 12711292
Granted Patent B2
US 12711292 · App. 18/310,656 · Granted Aug 18, 2026

Method and apparatus with circuit design parameter generation

Inventors: Youngmin Oh (Suwon-si, KR); Doyun Kim (Suwon-si, KR); Hyung-Dal Kwon (Suwon-si, KR); Yongwoo Lee (Suwon-si, KR); Bosun Hwang (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
G06F30/27G06F30/3308
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Quick Facts
Patent No.
US 12711292
App. No.
18/310,656
Granted
Aug 18, 2026
Kind
B2
Abstract

A method of generating a circuit design parameter meeting a target specification, the method including generating a first probability distribution of a first specification using a first model provided a first parameter where the first model is configured to infer a correlation between the first parameter and the first probability distribution, generating a second parameter using a second model provided the first probability distribution, and updating the first model based on the second parameter. The second model is trained by using a reward, the reward being determined based on a second probability distribution of a second specification corresponding to the second parameter.

Claims (33)

1 . A method of generating a circuit design parameter meeting a target specification, the method comprising:

generating a first probability distribution of a first specification using a first model provided a first parameter where the first model is configured to infer a correlation between the first parameter and the first probability distribution;

generating a second parameter using a second model provided the first probability distribution; and

updating the first model based on the second parameter,

wherein the second model is trained by using a reward, the reward being determined based on a second probability distribution of a second specification corresponding to the second parameter.

2 . The method of claim 1 , further comprising training the first model based on data obtained from a simulator outputting a third specification corresponding to a third parameter.

3 . The method of claim 1 , further comprising training the first model using training data that includes the first parameter with a third probability distribution, generated by a simulator provided with a third parameter being used as a ground truth.

4 . The method of claim 1 , wherein the first parameter is a virtual circuit design parameter.

5 . The method of claim 4 , wherein the second parameter obtained is another virtual circuit design parameter that is provided to the updated first model for further training of the first model.

6 . The method of claim 1 , further comprising training the second model, wherein the second specification is a state,

wherein respective operations of adjusting first parameters are actions, and

wherein the reward is based on the first probability distribution being determined based an increase in a previous action to a current action of adjusting the first parameter.

7 . The method of claim 6 , wherein the reward is determined based on a value obtained by subtracting a multiplication of a standard deviation of the first specification by a predetermined ratio from an average value of the first specification.

8 . The method of claim 6 , wherein the actions comprise an operation of adjusting each size of a plurality of transistors into respective different sizes.

9 . The method of claim 1 , further comprising training the second model, the training comprising assigning a high reward value in response to a standard deviation of the first specification being decreased compared to a previous standard deviation of a previous first probability distribution from the first model, and

wherein the first probability distribution comprises the standard deviation.

10 . The method of claim 1 , further comprising training the second model, the training comprising assigning a high reward value based on an average of specifications and a standard deviation of the first specification being increased compared to a previous average of specifications and standard deviation of the first specification.

11 . The method of claim 1 , further comprising training the first model, including training the first model to decrease a difference between a third specification obtained by applying the first parameter to a simulator and a first specification.

12 . The method of claim 1 , wherein the first parameter is the circuit design parameter.

13 . The method of claim 12 , wherein the circuit design parameter comprises a size of a transistor.

14 . The method of claim 12 , wherein the circuit design parameter comprises a size corresponding to each of a plurality of transistors.

15 . The method of claim 1 , further comprising:

transfer learning on the first model and the second model corresponding to a target specification and a new target specification including another specification.

16 . A non-transitory computer-readable storage medium storing instructions that, when executed by a processor, cause the processor to perform the method of claim 1 .

17 . An electronic device, comprising a processor configured to:

train a first model to infer a correlation between parameters and probability distributions with respect to a target circuit design specification;

generate a first probability distribution of a first specification by applying a first parameter as a circuit design parameter, to the first model;

generate a second parameter by applying the first probability distribution of the first specification to a second model; and

update the first model based on the second parameter,

wherein the second model is updated by using a reward determined based on a second probability distribution of a second specification corresponding to the second parameter.

18 . The electronic device of claim 17 , wherein the processor is further configured to perform updating of the second model, including using a first reward based on the first probability distribution.

19 . The electronic device of claim 18 , wherein the reward is further based on an action generated by an actor model provided at least the first probability distribution.

20 . The electronic device of claim 17 , wherein the training of the first model is dependent on ground truths generated by a circuit design simulator.