Methods and systems related to remote measuring and sensing

1 . A passive optoelectronic device on a substrate, the passive optoelectronic device comprising:

a photodetector configured to receive ambient optical energy incident upon the photodetector and convert the ambient optical energy into electrical energy at a first voltage, the ambient optical energy having a wavelength of less than 1.2 microns;

a voltage regulator electrically coupled to the photodetector, wherein the voltage regulator is configured to convert the electrical energy to a second voltage different than the first voltage;

a sensor electrically coupled to the voltage regulator and powered by the electrical energy, wherein the sensor is configured to create sensor data;

a first waveguide that defines a first end, a second end, and a length between the first end and the second end, the first waveguide has an internal volume of silicon;

a first grating coupler optically coupled to the first end of the first waveguide, the first grating coupler having a plurality of ridges parallel to each other, and the ridges transverse to the length of the first waveguide;

a second grating coupler optically coupled to the second end of the first waveguide, the second grating coupler having a plurality of ridges parallel to each other, and the ridges of the second grating coupler transverse to the length of the first waveguide;

a modulator electrically coupled to the voltage regulator, the modulator disposed between the first and second grating couplers, the modulator configured to modulate optical waves that propagate through the first waveguide, and towards the second grating coupler, using the electrical energy from the photodetector; and

a driver circuit electrically coupled to the modulator, wherein the driver circuit configured to selectively change a state of the modulator responsive to the sensor data, wherein, the optical waves that propagate through the first waveguide, and towards the second grating coupler, are coupled out of the first waveguide into air or free space and transmitted to a reader device.

2 . The passive optoelectronic device of claim 1 , wherein the photodetector further comprises a photodiode configured to convert optical energy with a wavelength of about 850 nanometers into electrical energy at a first voltage.

3 . The passive optoelectronic device of claim 2 , wherein the photodetector further comprises at least one selected from a group comprising:

a photodiode exposed on an outer surface of the passive optoelectronic device;

a plurality of photodiodes connected in series and exposed on the outer surface of the passive optoelectronic device; and

a photodiode optically coupled to the first waveguide.

4 . The passive optoelectronic device of claim 1 , wherein the modulator further comprises:

a first optical path having a first length and a second optical path having a second length, the second optical path distinct from the first optical path, and the first and second optical paths form a portion of the first waveguide;

a depletion region of a semiconductor junction disposed within the first optical path;

the first optical path electrically coupled to the driver circuit, wherein:

the first optical path and depletion region have a first state in which the first optical path induces a 180 degree phase shift in an optical wave that traverses the first optical path relative to an optical wave that simultaneously traverses the second optical path; and

the first optical path and the depletion region have a second state in which the first optical path induces 90 degrees or less of phase shift in an optical wave that traverses the first optical path relative to an optical wave that simultaneously traverses the second optical path.

5 . The passive optoelectronic device claim 1 , wherein the modulator further comprises:

a second waveguide that defines a closed path with a length and a silicon internal volume;

a first region of the second waveguide evanescently coupled to the first waveguide;

a depletion region of a semiconductor junction disposed at a second region within the closed path of the second waveguide, the second region distinct from the first region, and the second region coupled to the driver circuit; and

wherein the second waveguide and the depletion region are configured to selectively induce a phase shift in an optical wave that traverses the second waveguide.

6 . The passive optoelectronic device of claim 1 , wherein the modulator further comprises:

a second waveguide that defines a closed path with a length and has a silicon internal volume, a portion of the closed path of the second waveguide evanescently coupled to the first waveguide;

a first depletion region within the closed path of the second waveguide, the first depletion region electrically coupled to the driver circuit;

a third waveguide that defines a closed path with a length and has a silicon internal volume, a portion of the closed path of the third waveguide evanescently coupled to the first waveguide;

a second depletion region within the closed path of the second waveguide, the second depletion region electrically coupled to the driver circuit;

a fourth waveguide that defines a closed path with a length and has a silicon internal volume, a portion of the closed path of the fourth waveguide evanescently coupled to the first waveguide;

a third depletion region within the closed path of the fourth waveguide, the third depletion region electrically coupled to the driver circuit;

wherein the first, second and third depletion regions are each configured to selectively induce a phase shift in optical waves that traverse the second, third, and fourth waveguides, respectively; and

the length of the second waveguide is shorter than the length of the third waveguide, and the length of the third waveguide is shorter than the length of the fourth waveguide.

7 . The passive optoelectronic device of claim 1 , wherein the sensor is configured to sense a physical parameter in proximity of the passive optoelectronic device, and to create the sensor data responsive to the physical parameter.

8 . The passive optoelectronic device of claim 7 , further comprising:

the sensor configured to sense the physical parameter being at least one selected from a group comprising:

electrical current through the passive optoelectronic device;

electric field in the area of the passive optoelectronic device;

pressure proximate the passive optoelectronic device;

temperature proximate the passive optoelectronic device; and

movement of the passive optoelectronic device.

9 . The passive optoelectronic device of claim 1 , further comprising that the passive optoelectronic device defines:

a length of 100 microns or less;

a width of 100 microns or less; and

a thickness of 100 microns or less.

10 . The passive optoelectronic device of claim 1 , further comprising that the passive optoelectronic device defines:

a length of 100 microns or less measured parallel to the first waveguide;

a width of 100 microns or less measured perpendicular to the length and parallel to the substrate; and

a thickness of 400 microns or less measured perpendicular to the substrate.

11 . A method comprising:

receiving a light by a photodetector exposed on an outer surface of a passive optoelectronic device;

generating an electrical current from the light;

powering a sensor from the electrical current, the sensor creates sensor data based on the electrical current; and

wirelessly transmitting the sensor data from the passive optoelectronic device to a receiving device remote from the passive optoelectronic device, wherein the wirelessly transmitting comprises:

receiving a first infrared light by an optical coupler defined on the passive optoelectronic device;

coupling the first infrared light to a first waveguide of the passive optoelectronic device, and propagating the first infrared light along a first portion of the first waveguide; and then

modulating the first infrared light responsive to data to create modulated infrared light;

propagating the modulated infrared light along a second portion of the first waveguide distinct from the first portion; and

coupling the modulated infrared light out of the first waveguide and towards the receiving device.

12 . The method of claim 11 , wherein receiving the light further comprises receiving the light having a wavelength being at least one selected from a group comprising:

less than 1.2 microns;

less than 1.0 microns; and

850 nanometers.

13 . The method of claim 11 , wherein:

the light has a wavelength of 1.0 micron or less; and

the first infrared light has a wavelength of 1.2 microns or greater.

14 . The method of claim 11 :

wherein coupling the first infrared light to the first waveguide further comprising coupling by way of a first optical coupler that comprises a first grating structure; and

wherein coupling the modulated infrared light toward out of the first waveguide further comprising coupling by way of a second optical coupler that comprises a second grating structure.

15 . The method of claim 11 , wherein the modulating the first infrared light further comprises modulating by way of a Mach-Zehnder modulator disposed within an optical path of the first waveguide.

16 . The method of claim 11 , wherein the modulating the first infrared light further comprises modulating by way of an optical ring modulator having a first closed path.

17 . The method of claim 16 , wherein the modulating by way of the optical ring modulator further comprises modulating by way of the optical ring modulator having a plurality of closed paths.

18 . The method of claim 11 , further comprises sensing at least one selected from the group consisting of:

electrical current through the passive optoelectronic device;

pressure proximate to the passive optoelectronic device;

temperature proximate to the passive optoelectronic device; and

movement of the passive optoelectronic device.