Heat assisted magnetic recording head with slider and laser diode
The present embodiments relate to a heat-assisted magnetic recording (HAMR) head with a cavity configured to receive a laser diode (LD) chip. The inlet coupler layer can extend beyond a dielectric layer such that the dielectric layer is recessed away from a cavity receiving the LD chip, and a distance (G) between the inlet coupler and the LD chip is more easily controlled and modified to improve performance of the head. The dielectric layer can be angled at a first angle, and the inlet coupler, a waveguide, and an overcoat layer can be angled at a second angle and forming a side of the cavity.
1 . A heat-assisted magnetic recording (HAMR) head with a cavity configured to receive a laser diode (LD) chip, the HAMR head comprising:
a first dielectric layer;
a second dielectric layer disposed over a portion of the first dielectric layer, the second dielectric layer comprising a first side and a second side forming a first angle relative to the first dielectric layer;
an inlet coupler layer disposed over the second dielectric layer, wherein the inlet coupler layer comprises a first side and a second side, the second side forming a second angle relative to the first dielectric layer, and wherein the second side of the inlet coupler layer extends beyond the second side of the second dielectric layer by a length (L);
a waveguide disposed over the inlet coupler layer; and
an overcoat layer, with a first portion of the overcoat layer disposed over the waveguide, wherein the cavity configured to receive the LD chip is formed at a first side by the first portion of the overcoat layer, the waveguide, the inlet coupler layer, and the second dielectric layer, and at a second side by a second portion of the overcoat layer.
2 . The HAMR head of claim 1 , further comprising the LD chip disposed in the cavity, wherein a distance between an edge of the LD chip and the second side of the inlet coupler layer is defined by a distance (G).
3 . The HAMR head of claim 2 , further comprising:
a nozzle disposed on a first side of the LD chip;
a first electrode disposed on a second side of the LD chip; and
a second electrode disposed on the first dielectric layer.
4 . The HAMR head of claim 1 , wherein length L ranges between around 0.5 micrometers to 1 micrometer.
5 . The HAMR head of claim 1 , wherein a length of the waveguide is less than a length of the inlet coupler layer, and wherein a length of the first portion of the overcoat layer is less than the length of the waveguide.
6 . The HAMR head of claim 1 , wherein the inlet coupler layer comprises a Silicon Nitride (SiN) material.
7 . The HAMR head of claim 6 , further comprising:
a bottom return yoke layer disposed at a bottom surface of the HAMR head, the bottom return yoke layer comprising a remaining part of a number of Nickel-Iron (NiFe) alloy layers that are etched via an etching process and chemically stripped via a ferric chloride stripping process.
8 . The HAMR head of claim 6 , wherein the second dielectric layer comprises a remaining portion of a number of dielectric layers etched as part of an etching process to form the cavity.
9 . The HAMR head of claim 1 , wherein the HAMR head is part of a head gimbal assembly, wherein the HAMR head is connected to a slider and a load beam, wherein the load beam is connected to a suspension configured to support the HAMR head and the slider.
10 . A method for manufacturing a heat-assisted magnetic recording (HAMR) head with a cavity configured to receive a laser diode (LD) chip, the method comprising:
providing a first dielectric layer;
disposing a second dielectric layer over a portion of the first dielectric layer;
disposing an inlet coupler layer over the second dielectric layer, wherein the inlet coupler layer comprises a first side and a second side;
disposing a waveguide over the inlet coupler layer;
disposing an overcoat layer over the waveguide; and
etching a portion of the second dielectric layer, inlet coupler layer, waveguide, and overcoat layer to form a cavity, the second dielectric layer comprising a first side and a second side forming a first angle relative to the first dielectric layer, the second side forming a second angle relative to the first dielectric layer, and wherein the second side of the inlet coupler layer extends beyond the second side of the second dielectric layer by a length (L), a first portion of the overcoat layer disposed over the waveguide, and wherein the cavity is formed at a first side by the first portion of the overcoat layer, the waveguide, the inlet coupler layer, and the second dielectric layer, and at a second side by a second portion of the overcoat layer.
11 . The method of claim 10 , further comprising:
disposing a first portion of a second dielectric layer over the first dielectric layer;
disposing a first portion of a Nickel-Iron (NiFe) alloy over the first portion of the second dielectric layer;
forming a second portion of the second dielectric layer over the first portion of the NiFe alloy such that part of the first portion of the NiFe alloy is exposed;
disposing a coil over the second portion of the second dielectric layer;
forming a second portion of the NiFe alloy over the first portion of the NiFe alloy via a plating process;
disposing a third portion of the second dielectric layer such that part of the second portion of the NiFe alloy is exposed;
forming a second portion of the second dielectric layer over the first portion of the NiFe alloy such that part of the first portion of the NiFe alloy is exposed;
forming a third portion of the NiFe alloy over the second portion of the NiFe alloy via a plating process, wherein a first portion of the NiFe alloy and the second dielectric layer are etched to form the cavity; and
performing a chemical stripping process to remove a second portion of the NiFe alloy, wherein a remaining portion of the NiFe alloy comprising a bottom yoke return layer.
12 . The method of claim 10 , further comprising:
disposing the LD chip in the cavity, wherein a distance between an edge of the LD chip and the second side of the inlet coupler layer is defined by a distance (G).
13 . The method of claim 10 , further comprising:
disposing a nozzle on a first side of the LD chip;
disposing a first electrode on a second side of the LD chip; and
disposing a second electrode on the first dielectric layer.
14 . The method of claim 10 , wherein length L ranges between around 0.5 micrometers to 1 micrometer.
15 . The method of claim 10 , wherein a length of the waveguide is less than a length of the inlet coupler layer, and wherein a length of the first portion of the overcoat layer is less than the length of the waveguide.
16 . A head gimbal assembly comprising:
a recording head including a slider and a device connected to the slider, the device including:
a first dielectric layer;
a second dielectric layer disposed over a portion of the first dielectric layer;
an inlet coupler layer disposed over the second dielectric layer, wherein the second dielectric layer is recessed relative to the inlet coupler layer;
a waveguide disposed over the inlet coupler layer; and
an overcoat layer, with a first portion of the overcoat layer disposed over the waveguide, wherein a cavity is formed in the device by any of first dielectric layer, the second dielectric layer, the inlet coupler layer, the waveguide, and the overcoat layer;
a load beam connected to the recording head; and
a suspension connected to the load beam and configured to support the recording head.
17 . The head gimbal assembly of claim 16 , wherein the second dielectric layer of the device comprises a first side and a second side forming a first angle relative to the first dielectric layer, and wherein the inlet coupler layer comprises a first side and a second side, the second side forming a second angle relative to the first dielectric layer, and wherein the second side of the inlet coupler layer extends beyond the second side of the second dielectric layer by a length (L).
18 . The head gimbal assembly of claim 16 , wherein the cavity is formed at a first side by the first portion of the overcoat layer, the waveguide, the inlet coupler layer, and the second dielectric layer, and at a second side by a second portion of the overcoat layer.
19 . The head gimbal assembly of claim 17 , further comprising:
a laser diode (LD) chip disposed in the cavity of the device, wherein a distance between an edge of the LD chip and the second side of the inlet coupler layer is defined by a distance (G);
a nozzle disposed on a first side of the LD chip;
a first electrode disposed on a second side of the LD chip; and
a second electrode disposed on the first dielectric layer.
20 . The head gimbal assembly of claim 16 , further comprising:
a bottom return yoke layer disposed at a bottom surface of the device, the bottom return yoke layer comprising a remaining part of a number of Nickel-Iron (NiFe) alloy layers that are etched via an etching process and chemically stripped via a ferric chloride stripping process, and wherein the second dielectric layer comprises a remaining portion of a number of dielectric layers etched as part of an etching process to form the cavity.