Efficient soft decoding of error correction code via extrinsic bit information
Aspects of this technical solution can include selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits, modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits, allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR), and decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.
1 . A method for managing a memory device, comprising:
identifying a target page for a read operation and an extrinsic page adjacent to the target page;
identifying a hard decoding threshold for the target page;
modifying, based on read information for one or both of the target page and the extrinsic page, a plurality of thresholds corresponding to the hard decoding threshold, the plurality of thresholds defining a plurality of respective voltage ranges;
allocating respective log-likelihood ratios (LLRs) to the plurality of voltage ranges; and
decoding, based on the LLRs, the target page.
2 . The method of claim 1 , further comprising:
generating, based on the target page and the extrinsic page, a histogram corresponding to the target page;
wherein modifying is further based on the histogram.
3 . The method of claim 1 , wherein modifying is based on a read operation of the target page.
4 . The method of claim 3 , further comprising:
obtaining, during a sequential read, one or more of extrinsic page information including the second page, the LLRs and ICI information;
generating a magnitude of the LLRs in response to and based on a soft sampling operation, the LLRs having a first confidence based on the target page and the extrinsic page greater than a second confidence based on the target page and excluding the extrinsic page.
5 . The method of claim 3 , wherein the plurality of voltage ranges extend between adjacent ones of the plurality of voltage thresholds.
6 . The method of claim 1 , further comprising:
decoding the target page by hard decoding; and
modifying the plurality of voltage thresholds in response to an indication of failure corresponding to the decoding of the target page by hard decoding.
7 . The method of claim 1 , further comprising:
generating, in response to an indication of failure corresponding to the decoding the target page based on the LLR, an estimated read voltage for the target page.
8 . The method of claim 7 , further comprising:
allocating, to a modified voltage range based on the estimated read voltage, a modified log-likelihood ratio (LLR); and
decoding, based on the modified LLR, the target page.
9 . The method of claim 7 , wherein the plurality of voltage ranges extend between adjacent ones of the plurality of voltage thresholds.
10 . The method of claim 1 , wherein modifying includes using a trained neural network.
11 . The method of claim 1 , wherein modifying includes performing intercell interference compensation.
12 . A memory system comprising:
a non-volatile memory; and
a controller for performing operations of the non-volatile memory, the controller being configured to:
identify a target page for a read operation and an extrinsic page adjacent to the target page;
identify a hard decoding threshold for the target page;
modify, based on read information for one or both of the target page and the extrinsic page, a plurality of thresholds corresponding to the hard decoding threshold, the plurality of thresholds defining a plurality of respective voltage ranges;
allocate respective log-likelihood ratios (LLRs) to the plurality of voltage ranges; and
decode, based on the LLRs, the target page.
13 . The system of claim 12 , the controller further configured to:
generate, based on the target page and the extrinsic page, a histogram corresponding to the target page;
wherein modifying is further based on the histogram.
14 . The system of claim 12 , wherein modifying is based on a read operation of the target page.
15 . The system of claim 14 , the controller further configured to:
obtain, during a sequential read, one or more of extrinsic page information including the second page, the LLRs and ICI information;
generate a magnitude of the LLRs in response to and based on a soft sampling operation, the LLRs having a first confidence based on the target page and the extrinsic page greater than a second confidence based on the target page and excluding the extrinsic page.
16 . The system of claim 14 , wherein the plurality of voltage ranges extend between adjacent ones of the plurality of voltage thresholds.
17 . The system of claim 12 , the controller further configured to:
decode the target page by hard decoding; and
modify the plurality of voltage thresholds in response to an indication of failure corresponding to the decoding of the target page by hard decoding.
18 . The system of claim 12 , the controller further configured to:
generate, in response to an indication of failure corresponding to the decoding the target page based on the LLR, an estimated read voltage for the target page.
19 . The system of claim 18 , the controller further configured to:
allocate, to a modified voltage range based on the estimated read voltage, a modified log-likelihood ratio (LLR); and
decode, based on the modified LLR, the target page.
20 . The system of claim 18 , wherein the plurality of voltage ranges extend between adjacent ones of the plurality of voltage thresholds.