Substrate processing apparatus

1 . A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;

an upper electrode portion in an upper end portion of the internal space of the process chamber;

a lower electrode portion in the internal space of the process chamber to face the upper electrode portion; and

a gas supply unit configured to supply cooling gas to a bottom surface of a substrate that is seated on the lower electrode portion,

wherein the gas supply unit includes,

a gas supply source outside the process chamber and configured to provide a cooling gas; and

a gas filter connected to the gas supply source and configured to guide the cooling gas that is provided by the gas supply source into the process chamber,

wherein the gas filter includes one or more wall surfaces at least partially defining a gas flow path for the cooling gas,

wherein the gas filter includes a first region including a first material and a second region including a second material, the first region and the second region including different materials, the first region being on the second region, the first region and the second region having a same inclination angle greater than 0 with respect to a horizontal direction, and the first material and the second material having different respective dielectric constants,

wherein the first region and the second region are configured to cause the cooling gas flowing through the gas flow path to flow upwardly concurrently with colliding with the one or more wall surfaces at least partially defining the gas flow path.

2 . The substrate processing apparatus of claim 1 , wherein the gas flow path has a linear shape in a direction extending parallel to a central longitudinal axis of the gas filter.

3 . The substrate processing apparatus of claim 1 , wherein

the gas filter includes a plurality of first regions and a plurality of second regions, the plurality of first regions including the first region, the plurality of second regions including the second region,

the plurality of first regions and the plurality of second regions are alternately arranged in the gas filter, and

the plurality of first regions and the plurality of second regions have a same thickness and the same inclination angle.

4 . The substrate processing apparatus of claim 1 , wherein each given region of the first region and the second region has a center portion at a central longitudinal axis of the gas filter that is at a lower vertical level than an edge portion of the given region at an outer edge of the gas filter and is configured to be inclined with respect to the gas flow path.

5 . The substrate processing apparatus of claim 1 , wherein the first region and the second region have one end portion that is at a lower vertical level than another end portion, and are configured to be inclined with respect to the gas flow path.

6 . The substrate processing apparatus of claim 1 , wherein

the gas filter includes a plurality of first regions and a plurality of second regions, the plurality of first regions including the first region, the plurality of second regions including the second region,

the plurality of first regions and the plurality of second regions are alternately arranged, and

at least one first region of the plurality of first regions and at least one second region of the plurality of second regions have a plurality of thicknesses and a plurality of inclination angles.

7 . The substrate processing apparatus of claim 6 , wherein the plurality of thicknesses in the at least one first region are different from each other, respectively, and the plurality of inclination angles in the at least one first region are different from each other, respectively.

8 . The substrate processing apparatus of claim 7 , wherein the plurality of thicknesses in the at least one second region are different from each other, respectively, and the plurality of inclination angles in the at least one second region are different from each other, respectively.

9 . The substrate processing apparatus of claim 1 , wherein the gas supply unit further comprises a body within the process chamber.

10 . A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;

an upper electrode portion in an upper end portion of the internal space of the process chamber;

a lower electrode portion in the internal space of the process chamber to face the upper electrode portion; and

a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion,

wherein the gas supply unit includes a gas filter connected to a gas supply source and configured to guide the cooling gas that is provided by the gas supply source into the process chamber, and

wherein the gas filter includes a first region including a first material and a second region including a second material, the first region and the second region including different materials, the first region being on the second region, the first region and the second region having a same inclination angle greater than 0 with respect to a horizontal direction, and the first material and the second material having different respective dielectric constants.

11 . The substrate processing apparatus of claim 10 , wherein

the gas filter includes a plurality of first regions and a plurality of second regions, the plurality of first regions including the first region, the plurality of second regions including the second region,

the plurality of first regions and the plurality of second regions are alternately arranged in the gas filter, and

the plurality of first regions and the plurality of second regions have a same thickness and the same inclination angle.

12 . The substrate processing apparatus of claim 10 , wherein

the gas filter includes a plurality of first regions and a plurality of second regions, the plurality of first regions including the first region, the plurality of second regions including the second region,

the plurality of first regions and the plurality of second regions are alternately arranged, and at least one first region of the plurality of first regions and

at least one second region of the plurality of second regions have a plurality of thicknesses and a plurality of inclination angles.

13 . A substrate processing apparatus, comprising:

a process chamber having one or more inner surfaces at least partially defining an internal space;

an upper electrode portion in an upper end portion of the internal space of the process chamber;

a lower electrode portion in the internal space of the process chamber to face the upper electrode portion; and

a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion,

wherein the gas supply unit includes a gas filter configured to guide the cooling gas into the process chamber,

wherein the gas filter includes a plurality of first regions including a first material and a plurality of second regions including a second material, the first material and the second material having different respective dielectric constants,

wherein the plurality of first regions and the plurality of second regions are alternately arranged, at least one first region of the plurality of first regions and at least one second region of the plurality of second regions have an inclination angle greater than 0 with respect to a horizontal direction.

14 . The substrate processing apparatus of claim 13 , wherein the at least one first region of the plurality of first regions and the at least one second region of the plurality of second regions have a same angle with respect to the horizontal direction.

15 . The substrate processing apparatus of claim 14 , wherein the at least one first region of the plurality of first regions and the at least one second region of the plurality of second regions have a same thickness.

16 . The substrate processing apparatus of claim 13 , wherein each of the at least one first region of the plurality of first regions and each of the at least one second region of the plurality of second regions has a center portion at a central longitudinal axis of the gas filter that is at a lower vertical level than an edge portion of the given region at an outer edge of the gas filter.

17 . The substrate processing apparatus of claim 13 , wherein the gas filter includes one or more wall surfaces at least partially defining a gas flow path for the cooling gas.

18 . The substrate processing apparatus of claim 13 , wherein the at least one first region of the plurality of first regions and the at least one second region of the plurality of second regions have a different thickness.

19 . The substrate processing apparatus of claim 13 , wherein some of the plurality of first regions have a different thickness from each other.

20 . The substrate processing apparatus of claim 13 , wherein the gas filter includes a plurality of third regions including a third material different from the first and second materials, the plurality of first regions, the plurality of second regions and the plurality of third regions are sequentially and alternately arranged.