Semiconductor manufacturing apparatus and component for semiconductor manufacturing apparatus
Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.
1 . A semiconductor manufacturing apparatus comprising:
a processing chamber;
a substrate support provided in the processing chamber and configured to hold a substrate;
a plate facing the substrate support and having a gas introduction port; and
a cylindrical member configured to support the plate and surround a periphery of the substrate, wherein
the plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and
the cylindrical member includes a first portion that is deformable under a load.
2 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the component of the SiC member is an integrated structure of the plate and the cylindrical member.
3 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the SiC member has a hollow portion inside.
4 . The semiconductor manufacturing apparatus according to claim 1 , wherein
a thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm.
5 . The semiconductor manufacturing apparatus according to claim 4 , wherein
the thickness of the first portion of the SiC member is 0.05 mm or more and less than 0.5 mm.
6 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the SiC member includes a second portion that is not deformed under a load, and a thickness of the second portion is larger than a thickness of the first portion.
7 . The semiconductor manufacturing apparatus according to claim 6 , wherein
the thickness of the second portion of the SiC member is 1.0 mm or less.
8 . A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber; and
a SiC member disposed in the plasma processing chamber,
wherein the SiC member comprises:
a shower plate portion disposed above the substrate support; and
a cylindrical portion surrounding the substrate support,
wherein the cylindrical portion has a hollow structure and is deformable under a load.
9 . The plasma processing apparatus according to claim 8 ,
wherein the cylindrical portion comprises:
an upper portion having a first thickness;
an intermediate portion having a second thickness; and
a lower portion having a third thickness, and
wherein the second thickness is less than the first thickness and the third thickness.
10 . The plasma processing apparatus according to claim 9 ,
wherein the second thickness is 0.05 mm or more and less than 1.0 mm.
11 . The plasma processing apparatus according to claim 10 ,
wherein the first thickness and the third thickness are 1.0 mm or less.
12 . The plasma processing apparatus according to claim 9 ,
wherein the first thickness is equal to the third thickness.
13 . The plasma processing apparatus according to claim 9 ,
wherein the intermediate portion is deformable under a load, and
wherein the upper portion and the lower portion is not deformable under a load.
14 . The plasma processing apparatus according to claim 8 ,
wherein the shower plate portion has a hollow structure.
15 . A substrate processing apparatus comprising:
a chamber;
a substrate support disposed in the chamber; and
a member disposed in the chamber,
wherein the member comprises:
a shower plate portion disposed above the substrate support; and
a cylindrical portion surrounding the substrate support, and
wherein the cylindrical portion has a hollow structure and is deformable under a load.
16 . The substrate processing apparatus according to claim 15 ,
wherein the cylindrical portion comprises:
an upper portion having a first thickness;
an intermediate portion having a second thickness; and
a lower portion having a third thickness, and
wherein the second thickness is less than the first thickness and the third thickness.
17 . The substrate processing apparatus according to claim 16 ,
wherein the second thickness is 0.05 mm or more and less than 1.0 mm.
18 . The substrate processing apparatus according to claim 16 ,
wherein the first thickness and the third thickness are 1.0 mm or less.
19 . The substrate processing apparatus according to claim 16 ,
wherein the first thickness is equal to the third thickness.
20 . The substrate processing apparatus according to claim 15 ,
wherein the shower plate portion has a hollow structure.