IP Library › Granted Patent US 12712159

Granted Patent B2

US 12712159 · App. 18/013,145 · Granted Aug 18, 2026

Systems for controlling plasma density distribution profiles including multi-RF zoned substrate supports

Inventors: Juline Shoeb (Fremont, CA); Alexander Miller Paterson (San Jose, CA)

Assignee: Lam Research Corporation

H01J37/32568 H01J37/32091 H01J37/32715 H10P72/722

View Patent ↗

Loading inventors, assignments & file history…

Monitor This Case

Get email alerts when status or documents change.

Order Certified Copies

Most orders are placed with the USPTO same day — all within 24 business hours.

Order via The Patent Place →

Pre-filled with this patent's details

Quick Facts

Patent No.: US 12712159
App. No.: 18/013,145
Granted: Aug 18, 2026
Kind: B2

External Links

USPTO Patent Center↗ Full Patent PDF↗

Abstract

A substrate processing system includes a substrate support, N RF sources and a controller. The substrate support is arranged in a processing chamber, supports a substrate on an upper surface thereof, and includes: a baseplate made of electrically conductive material and M electrodes disposed in the baseplate. Each of the N RF sources supplies a respective RF signal to one or more of the M electrodes, where: M and N are integers greater than or equal to two; each of the respective RF signals is supplied to a different set of the M electrodes; and each of the sets includes a different one or more of the M electrodes. The controller causes one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources and separately controls voltage outputs of the N RF sources to adjust the plasma in the processing chamber.

Claims (126)

1 . A substrate processing system comprising:

a substrate support arranged in a processing chamber, configured to support a substrate on an upper surface thereof, and including,

a baseplate made of electrically conductive material, and

M electrodes disposed in the baseplate, where M is an integer greater than or equal to two;

N radio frequency (RF) sources, where N is an integer greater than or equal to two, wherein each of the N RF sources is configured to supply a respective RF signal to one or more of the M electrodes, wherein each of the respective RF signals is supplied to a different set of the M electrodes, and wherein each of the sets includes a different one or more of the M electrodes; and

a controller configured to cause one or more coils to strike and maintain plasma in the processing chamber independently of the N RF sources and to separately control voltage outputs of the N RF sources to adjust the plasma in the processing chamber.

2 . The substrate processing system of claim 1 , wherein M is greater than or equal to N.

3 . The substrate processing system of claim 1 , wherein N is greater than or equal to M.

4 . The substrate processing system of claim 1 , wherein the controller is configured to at least one of:

select which one or more of the N RF sources is to provide one or more of the respective RF signals to one of the M electrodes; or

for each set of the M electrodes, select which one or more of the N RF sources is to provide one or more of the respective RF signals to that set of the M electrodes.

5 . The substrate processing system of claim 4 , wherein M is greater than or equal to N.

6 . The substrate processing system of claim 1 , further comprising N cavities located on an upper surface of the baseplate, wherein the M electrodes are arranged in the N cavities.

7 . The substrate processing system of claim 6 , wherein the M electrodes are embedded in dielectric material located in the N cavities.

8 . The substrate processing system of claim 1 , further comprising:

N cavities located on an upper surface of the baseplate, wherein the M electrodes are arranged in the N cavities; and

one or more dielectric separators arranged between the M electrodes and the substrate.

9 . The substrate processing system of claim 1 , further comprising a dielectric layer arranged between the M electrodes and the baseplate.

10 . The substrate processing system of claim 1 , wherein a frequency of the N RF signals is the same as a frequency used to generate the plasma.

11 . The substrate processing system of claim 1 , wherein a frequency of the N RF signals is different than a frequency used to generate the plasma.

12 . The substrate processing system of claim 1 , further comprising:

the processing chamber,

wherein the one or more coils include an inner coil and an outer coil,

wherein the inner coil is arranged outside of the processing chamber and adjacent to a window of the processing chamber, and

wherein the outer coil is arranged outside of the processing chamber adjacent to the window and radially outside of and spaced from the inner coil; and

an RF source configured to power the inner coil and the outer coil,

wherein the controller is further configured to control the RF source to adjust current supplied to the inner coil relative to current supplied to the outer coil.

13 . The substrate processing system of claim 12 , wherein the controller is configured to control the RF source to one of:

supply more current to the outer coil than to the inner coil; or

supply more current to the inner coil than to the outer coil.

14 . The substrate processing system of claim 1 , further comprising an RF source configured to supply a bias voltage to the baseplate.

15 . The substrate processing system of claim 1 , wherein at least one of the N RF signals has a frequency that is different than at least another one of the N RF signals.

16 . The substrate processing system of claim 1 , wherein the N RF signals have the same frequency.

17 . The substrate processing system of claim 1 , further comprising N matching networks arranged between the N RF sources and the M electrodes.

18 . The substrate processing system of claim 1 , further comprising a dielectric layer disposed on the baseplate,

wherein the M electrodes are disposed between the dielectric layer and the baseplate.

19 . The substrate processing system of claim 18 , wherein the dielectric layer comprises a plurality of dielectric separators.

20 . The substrate processing system of claim 19 , wherein conductive material of the baseplate is disposed between the plurality of dielectric separators.

21 . A substrate processing system comprising:

a processing chamber including a window;

a substrate support arranged in the processing chamber, configured to support a substrate on an upper surface thereof and including

a baseplate, and

M electrodes disposed in the baseplate, where M is an integer greater than or equal to 2;

an inner coil arranged outside of the processing chamber adjacent to the window;

an outer coil arranged outside of the processing chamber adjacent to the window and radially outside of and spaced from the inner coil;

N matching networks arranged between the N RF sources and the M electrodes; and

a controller configured to strike plasma by supplying RF power to the inner and outer coils and to vary a plasma density distribution profile in the processing chamber by (i) varying power supplied to the inner coil relative to the outer coil, and (ii) varying power supplied to at least one of the M electrodes relative to at least another one of the M electrodes.

22 . The substrate processing system of claim 21 , wherein M is greater than or equal to N.

23 . The substrate processing system of claim 21 , wherein N is greater than or equal to M.

24 . The substrate processing system of claim 21 , wherein the controller is configured to at least one of:

select which one or more of the N RF sources is to provide one or more of the respective RF signals to one of the M electrodes; or

for each set of the M electrodes, select which one or more of the N RF sources is to provide one or more of the respective RF signals to that set of the M electrodes.

25 . The substrate processing system of claim 24 , wherein M is greater than or equal to N.

26 . The substrate processing system of claim 21 , further comprising N cavities located on an upper surface of the baseplate, wherein the M electrodes are arranged in the N cavities.

27 . The substrate processing system of claim 26 , wherein the M electrodes are embedded in dielectric material located in the N cavities.

28 . The substrate processing system of claim 21 , further comprising:

N cavities located on an upper surface of the baseplate, wherein the M electrodes are arranged in the N cavities; and

one or more dielectric separators arranged between the M electrodes and the substrate.

29 . The substrate processing system of claim 21 , further comprising a dielectric layer arranged between the M electrodes and the baseplate.

30 . The substrate processing system of claim 21 , wherein a frequency of the N RF signals is the same as a frequency used to generate the plasma.

31 . The substrate processing system of claim 21 , wherein a frequency of the N RF signals is different than a frequency used to generate the plasma.

32 . The substrate processing system of claim 21 , further comprising a matching network connected between an RF source and the inner coil and the outer coil.

33 . The substrate processing system of claim 21 , wherein the controller is configured to control the RF source to supply more current to the outer coil than to the inner coil.

34 . The substrate processing system of claim 21 , further comprising an RF source configured to supply a bias voltage to the baseplate.

35 . The substrate processing system of claim 21 , wherein at least one of the N RF signals has a frequency that is different than at least another one of the N RF signals.

36 . The substrate processing system of claim 21 , wherein the N RF signals have the same frequency.

37 . The substrate processing system of claim 21 , wherein:

the M electrodes comprise a first electrode and a second electrode; and

the controller is configured to control the supply of the RF signals such that

a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, wherein the first amount of power is different than the second amount of power, and

a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, wherein the first RF voltage is greater than the second RF voltage.

38 . The substrate processing system of claim 37 , wherein the first electrode is disposed in the baseplate more radially inward than the second electrode and receives a higher RF voltage than the second electrode.

39 . The substrate processing system of claim 37 , wherein the first electrode is disposed more radially outward in the baseplate than the second electrode and receives a higher RF voltage than the second electrode.

40 . The substrate processing system of claim 21 , wherein:

the M electrodes comprise a first set of electrodes and a second set of electrodes;

the first set of electrodes correspond to a first RF zone;

the second set of electrodes correspond to a second RF zone; and

the second RF zone is located radially inwardly from the first RF zone.

41 . The substrate processing system of claim 21 , wherein the M electrodes are disposed in a plane parallel to and offset from the upper surface of the substrate support.

42 . The substrate processing system of claim 21 , wherein the M electrodes are disposed in different layers of the baseplate.

43 . The substrate processing system of claim 21 , wherein the controller is configured to control the N RF signals to adjust the plasma to increase plasma uniformity during a transient period during startup of the N RF sources.

44 . The substrate processing system of claim 21 , wherein one or more of the M electrodes also operates as a heating element.

45 . A substrate processing system comprising:

a processing chamber including a window;

a substrate support arranged in the processing chamber, configured to support a substrate on an upper surface thereof and including

a baseplate, and

a dielectric layer arranged above the baseplate and including M electrodes disposed in the dielectric layer, where M is an integer greater than or equal to two;

an inner coil arranged outside of the processing chamber adjacent to the window;

an outer coil arranged outside of the processing chamber adjacent to the window and radially outside of and spaced from the inner coil;

N matching networks arranged between the N RF sources and the M electrodes; and

46 . The substrate processing system of claim 45 , wherein M is greater than or equal to N.

47 . The substrate processing system of claim 45 , wherein N is greater than or equal to M.

48 . The substrate processing system of claim 45 , wherein the controller is configured to at least one of:

select which one or more of the N RF sources is to provide one or more of the respective RF signals to one of the M electrodes; or

for each set of the M electrodes, select which one or more of the N RF sources is to provide one or more of the respective RF signals to that set of the M electrodes.

49 . The substrate processing system of claim 48 , wherein M is greater than or equal to N.

50 . The substrate processing system of claim 45 , wherein a frequency of the N RF signals is the same as a frequency used to generate the plasma.

51 . The substrate processing system of claim 45 , wherein a frequency of the N RF signals is different than a frequency used to generate the plasma.

52 . The substrate processing system of claim 45 , further comprising a matching network connected between an RF source and the inner coil and the outer coil.

53 . The substrate processing system of claim 45 , wherein the controller is configured to control the RF source to supply more current to the outer coil than to the inner coil.

54 . The substrate processing system of claim 45 , further comprising an RF source configured to supply a bias voltage to the baseplate.

55 . The substrate processing system of claim 45 , wherein at least one of the N RF signals has a frequency that is different than at least another one of the N RF signals.

56 . The substrate processing system of claim 45 , wherein the N RF signals have the same frequency.

57 . The substrate processing system of claim 45 , wherein:

the M electrodes comprise a first electrode and a second electrode; and

the controller is configured to control the supply of the RF signals such that

a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, wherein the first amount of power is different than the second amount of power, and

a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, wherein the first RF voltage is greater than the second RF voltage.

58 . The substrate processing system of claim 57 , wherein the first electrode is disposed in the baseplate more radially inward than the second electrode and receives a higher RF voltage than the second electrode.

59 . The substrate processing system of claim 57 , wherein the first electrode is disposed more radially outward in the baseplate than the second electrode and receives a higher RF voltage than the second electrode.

60 . The substrate processing system of claim 45 , wherein:

the M electrodes comprise a first set of electrodes and a second set of electrodes;

the first set of electrodes correspond to a first RF zone;

the second set of electrodes correspond to a second RF zone; and

the second RF zone is located radially inwardly from the first RF zone.

61 . The substrate processing system of claim 45 , wherein the M electrodes are disposed in the dielectric layer and in a plane parallel to and below the upper surface of the substrate support.

62 . The substrate processing system of claim 45 , wherein the M electrodes are disposed in different layers of the baseplate.

63 . The substrate processing system of claim 45 , wherein the controller is configured to control the N RF signals to adjust the plasma to increase plasma uniformity during a transient period during startup of the N RF sources.

64 . The substrate processing system of claim 45 , wherein one or more of the M electrodes also operates as a heating element.

65 . The substrate processing system of claim 45 , further comprising another dielectric layer disposed on the baseplate,

wherein the M electrodes are disposed between the another dielectric layer and the baseplate.

66 . The substrate processing system of claim 65 , wherein the dielectric layer comprises a plurality of dielectric separators.

67 . The substrate processing system of claim 66 , wherein conductive material of the baseplate is disposed between the plurality of dielectric separators.