Device for controlling trapped ions with an electrode layer of low surface roughness
A micro-fabricated device for controlling trapped ions includes a substrate. A structured electrode layer is disposed over the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer is formed of a multilayer stack. The multilayer stack includes an electrically conductive smoothing layer having a planarized surface and an electrically conductive top layer disposed over the planarized surface of the smoothing layer. The top layer provides an exposed surface of the structured electrode layer, the exposed surface having a mean surface roughness equal to or less than Ra=5 nm.
1 . A micro-fabricated device for controlling trapped ions, the micro-fabricated device comprising:
a substrate; and
a structured electrode layer disposed over the substrate,
wherein the structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer,
wherein the structured electrode layer is formed of a multilayer stack, the multilayer stack comprising:
an electrically conductive smoothing layer having a planarized surface; and
an electrically conductive top layer disposed over the planarized surface of the smoothing layer, the top layer providing an exposed surface of the structured electrode layer, the exposed surface having a mean surface roughness equal to or less than Ra=5 nm.
2 . The micro-fabricated device of claim 1 , wherein the top layer comprises TiN or Ti.
3 . The micro-fabricated device of claim 1 , wherein the smoothing layer has a thickness equal to or less than 500 nm.
4 . The micro-fabricated device of claim 1 , wherein the smoothing layer comprises TiW or Ti or W or Ta or Al or AlSiCu or Cu.
5 . The micro-fabricated device of claim 1 , wherein the top layer directly contacts the planarized surface of the smoothing layer.
6 . The micro-fabricated device of claim 1 , wherein the multilayer stack further comprises:
an adhesion layer disposed between the planarized surface of the smoothing layer and the top layer.
7 . The micro-fabricated device of claim 6 , wherein the adhesion layer has a thickness equal to or less than 50 nm.
8 . The micro-fabricated device of claim 1 , wherein a mean surface roughness of the planarized surface of the smoothing layer is equal to or less than Ra=4 nm.
9 . The micro-fabricated device of claim 1 , wherein the multilayer stack further comprises:
a metal layer disposed between the substrate and the smoothing layer, wherein the metal layer has a thickness equal to or greater than 500 nm.
10 . The micro-fabricated device of claim 9 , wherein the metal layer comprises Al or AlSiCu or Cu.
11 . The micro-fabricated device of claim 1 , wherein the multilayer stack further comprises:
a metal layer disposed between the substrate and the smoothing layer, wherein the metal layer has a thickness equal to or greater than 1000 nm.
12 . The micro-fabricated device of claim 1 , wherein the multilayer stack further comprises:
a metal layer disposed between the substrate and the smoothing layer, wherein the metal layer has a thickness equal to or greater than 1500 nm.
13 . A method of manufacturing a micro-fabricated device for controlling trapped ions, the method comprising:
providing a substrate;
forming an electrically conductive smoothing layer over the substrate;
planarizing the smoothing layer to form a planarized surface of the smoothing layer; and
forming an electrically conductive top layer over the planarized surface of the smoothing layer, the top layer providing an exposed surface of a structured electrode layer forming a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer, the exposed surface having a mean surface roughness equal to or less than Ra=5 nm.
14 . The method of claim 13 , wherein a mean surface roughness of the planarized surface of the smoothing layer is equal to or less than Ra=4 nm.
15 . The method of claim 13 , wherein the planarizing comprises chemical mechanical planarization.
16 . The method of claim 13 , wherein forming the top layer comprises sputtering or electroplating.
17 . The method of claim 13 , further comprising:
forming a metal layer over the substrate before forming the smoothing layer, wherein the metal layer has a thickness equal to or greater than 500 nm.
18 . The method of claim 13 , wherein the structured electrode layer is formed by lithography including etching the smoothing layer and the top layer.
19 . The method of claim 13 , further comprising:
forming an adhesion layer on the planarized surface of the smoothing layer prior to forming the top layer.
20 . The method of claim 19 , wherein forming the adhesion layer comprises depositing Ti on the planarized surface of the smoothing layer prior to forming the top layer.