Light emitting device

1 . A light emitting device comprising:

a semiconductor laser element configured to emit light in a first direction;

a light-reflecting part having a light-reflecting surface; and

a base member comprising:

a bottom part,

a wall part surrounding the bottom part and having an upper surface,

a recess defined by an upper surface of the bottom part and an inner lateral surface of the wall part, the recess being located inward of the upper surface of the wall part in a top view,

a first wiring part comprising a first wiring region and a second wiring region provided on the upper surface of the wall part, and

a second wiring part comprising a first wiring region and a second wiring region that are located in the recess, wherein:

the light-reflecting part is located at a position spaced from the inner lateral surface of the wall part that defines the recess,

in the top view, the wall part includes a first outer edge toward which the semiconductor laser element is configured to emit light, a second outer edge opposite the first outer edge, a third outer edge extending from the first outer edge to the second outer edge, and a fourth outer edge opposite the third outer edge,

in the top view, the recess includes a first outer edge extending along the first outer edge of the wall part, a second outer edge opposite the first outer edge, a third outer edge extending along the third outer edge of the wall part, and a fourth outer edge opposite the third outer edge,

the semiconductor laser element and the light-reflecting part are located in the recess, the light reflecting part being located between the semiconductor laser element and the first outer edge of the recess,

the first wiring region and the second wiring region of the first wiring part are located between the second outer edge of the wall part and the second outer edge of the recess,

a distance between the second outer edge of the wall part and the second outer edge of the recess is greater than a distance between the first outer edge of the wall part and the first outer edge of the recess and greater than a distance between the third outer edge of the wall part and the third outer edge of the recess, and

the first wiring region and the second wiring region of the first wiring part are arranged adjacent to each other in a second direction perpendicular to the first direction on the upper surface of the wall part.

2 . The light emitting device according to claim 1 further comprising:

a cover,

wherein the base member comprises a welding part surrounding the recess,

wherein the cover is bonded to the welding part,

wherein the cover is not overlapped with the first wiring region and the second wiring region of the first wiring part in a top view,

wherein light reflected by the light-reflecting part is transmitted through the cover and emitted upward.

3 . The light emitting device according to claim 2 ,

wherein the welding part is formed of a material that contains iron.

4 . The light emitting device according to claim 1 ,

wherein an outer edge of the first wiring region of the first wiring part on a side corresponding to the third outer edge of the wall part is spaced from the third outer edge of the wall part,

wherein an outer edge of the second wiring region of the first wiring part on a side corresponding to the fourth outer edge of the wall part is spaced from the fourth outer edge of the wall part, and

wherein (i) a distance in the second direction between said outer edge of the first wiring region of the first wiring part and said outer edge of the second wiring region of the first wiring part is greater than (ii) a distance in the second direction from the third outer edge of the recess to the fourth outer edge of the recess.

5 . The light emitting device according to claim 1 ,

wherein the semiconductor laser element is disposed on the bottom part.

6 . The light emitting device according to claim 5 ,

wherein the base member comprises a ceramic of aluminum nitride.

7 . The light emitting device according to claim 1 ,

wherein the base member comprises a ceramic of aluminum nitride.

8 . The light emitting device according to claim 1 ,

wherein the base member comprises a ceramic of aluminum oxide.

9 . The light emitting device according to claim 1 further comprising:

a sub-mount,

wherein the semiconductor laser element is mounted on the bottom part of the base member via the sub-mount.

10 . The light emitting device according to claim 1 further comprising:

a wire connected to the semiconductor laser element,

wherein the semiconductor laser element is electrically connected to the second wiring region of the second wiring part via the wire.

11 . The light emitting device according to claim 10 ,

wherein, in the top view, the wire and the light-reflecting surface do not overlap each other.

12 . The light emitting device according to claim 1 ,

wherein the base member and the light-reflecting part are provided separately.

13 . The light emitting device according to claim 1 ,

wherein the semiconductor laser element and the light-reflecting part are disposed on a same plane.

14 . The light emitting device according to claim 1 ,

wherein a width in the first direction of each of the first wiring region and the second wiring region of the first wiring part is smaller than a width in the second direction of each of the first wiring region and the second wiring region of the first wiring part.

15 . The light emitting device according to claim 1 ,

wherein the upper surface of the wall part is positioned above the semiconductor laser element and the light-reflecting part.

16 . The light emitting device according to claim 1 , further comprising:

a fluorescent part having a light-receiving surface configured to be irradiated with the light reflected at the light-reflecting surface;

wherein an irradiated region is formed on the light-reflecting surface when the light-reflecting surface is irradiated with the light, the irradiated region including a first endmost portion and a second endmost portion opposite the first endmost portion; and

wherein the light-reflecting surface is arranged such that the following occur simultaneously when the light-reflecting surface is irradiated with the light:

(i) a portion of the light reflected at the first endmost portion of the irradiated region and a portion of the light reflected at a location other than the first endmost portion of the irradiated region are overlapped with each other on the light-receiving surface,

(ii) a portion of the light reflected at the second endmost portion of the irradiated region and a portion of the light reflected at a location other than the second endmost portion of the irradiated region are overlapped with each other on the light-receiving surface, and

(iii) a portion of the light reflected at the first endmost portion of the irradiated region and a portion of the light reflected at the second endmost portion of the irradiated region are not overlapped with each other on the light-receiving surface.

17 . The light emitting device according to claim 1 ,

wherein the first wiring region and the second wiring region of the second wiring part are arranged in the second direction.

18 . The light emitting device according to claim 1 ,

wherein in the top view, no wiring region is provided between the first outer edge of the wall part and the first outer edge of the recess.

19 . The light emitting device according to claim 1 ,

wherein the semiconductor laser element has a light emitting surface perpendicular to a lower surface of the base member.

20 . The light emitting device according to claim 19 ,

wherein the semiconductor laser element is configured to emit light from the light emitting surface laterally toward the light-reflecting part.