Laser light source and LIDAR system comprising the laser light source
The invention relates to a laser light source ( 10 ), comprising an arrangement ( 120 ) of surface-emitting semiconductor lasers ( 1251, 1252, . . . 125 n ) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser ( 100 ) which emits radiation ( 110 ) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation ( 110 ). The emission frequency of the first semiconductor laser can be changed by changing the operating current.
1 . A laser light source comprising:
an edge-emitting first semiconductor laser adapted to emit a first radiation of a single optical mode;
an array of surface-emitting semiconductor lasers;
a first voltage source wherein a voltage below a threshold voltage of the surface-emitting semiconductor lasers is configured to be applied to the array of surface-emitting semiconductor lasers,
wherein the edge-emitting first semiconductor laser is configured to excite the array of surface-emitting semiconductor lasers beyond threshold, the array of surface-emitting semiconductor lasers is adapted to absorb the first radiation and to emit laser radiation at an emission wavelength through an injection-locking mechanism; and
wherein a wavelength of the first radiation and the emission wavelength are configured to be modulated by changing a current intensity impressed in the edge-emitting first semiconductor laser.
2 . The laser light source according to claim 1 , wherein the array includes more than 100 surface-emitting semiconductor lasers.
3 . The laser light source according to claim 1 , further comprising a polarization-rotating element arranged between the edge-emitting first semiconductor laser and a part of the surface-emitting semiconductor lasers.
4 . The laser light source according to claim 1 , wherein apertures of the surface-emitting semiconductor lasers are formed in an elliptical shape.
5 . The laser light source according to claim 4 , wherein the elliptical apertures are oriented in different directions.
6 . The laser light source according to claim 1 , wherein the laser radiation has a power greater than 100 mW.
7 . The laser light source according to claim 1 , further comprising a second voltage source wherein a variable voltage is configured to be applied to the edge-emitting first semiconductor laser, so that the current intensity configured to be impressed in the edge-emitting first semiconductor laser is configured to vary.
8 . A LIDAR system comprising:
a laser light source;
wherein the laser light source comprises:
an edge-emitting first semiconductor laser adapted to emit a first radiation of a single optical mode;
an array of surface-emitting semiconductor lasers;
a first voltage source wherein a voltage below a threshold voltage of the surface-emitting semiconductor lasers is configured to be applied to the array of surface-emitting semiconductor lasers,
wherein the edge-emitting first semiconductor laser is configured to excite the array of surface-emitting semiconductor lasers beyond threshold, the array of surface-emitting semiconductor lasers is adapted to absorb the first radiation and to emit laser radiation at an emission wavelength through an injection-locking mechanism,
wherein the wavelength of the first radiation and the emission wavelength are configured to be modulated by changing a current intensity in the edge-emitting first semiconductor laser; and
a second voltage source, wherein a variable voltage is configured to be applied to the edge-emitting first semiconductor laser, so that the current intensity configured to be impressed in the edge-emitting first semiconductor laser is configured to vary.
9 . The LIDAR system according to claim 8 , wherein a beam splitter is arranged between the edge-emitting first semiconductor laser and the array of surface-emitting semiconductor lasers.
10 . The LIDAR system according to claim 8 , wherein a beam splitter is arranged on a side of the array of surface-emitting semiconductor lasers facing away from the edge-emitting first semiconductor laser.