Switched RC network to improve the noise and stability of a low-noise amplifier
A radio frequency (RF) amplifier has a first transistor with a first gate coupled to a first input, and a first series-connected capacitor-resistor combination coupled between the first gate and a first source. A first shunt switch is in parallel with the first resistor and controlled by a first signal. A grounding switch is between the first gate and ground, controlled by a second signal. A controller commands the switches to select an on-state for amplification at the first input or off-state to prevent RF signal amplification. A second transistor with a second gate is coupled to a second input, and a second series-connected capacitor-resistor combination is coupled between the second gate and a second source. A second shunt switch is in parallel with the second resistor and controlled by a third signal. A grounding switch is between the first gate and ground and is controlled by a fourth signal.
1 . A radio frequency amplifier comprising:
a first transistor having a first drain connected to a first output terminal, a first source coupled to a common node, and a first gate linked to a first radio frequency (RF) input;
a series-connected combination of a first capacitor and a first resistor between the first gate and the first source;
a first shunt switch coupled in parallel with the first resistor and controlled by a first shunting control signal;
a first grounding switch coupled between the first gate and ground, controlled by a first grounding control signal; and
a controller configured to:
select an on-state for the first transistor by generating the first grounding control signal to command the first grounding switch into an open-state, enabling amplification of an RF signal at the first input, and concurrently generate the first shunting control signal to command the first shunting switch into a closed-state; and
select an off-state for the first transistor by generating the first grounding control signal to command the first grounding switch into a closed-state, thereby preventing amplification of RF signals at the first input, and generating the first shunting control signal to command the first shunting switch into an open-state.
2 . The RF amplifier of claim 1 further comprising:
a second transistor having a second drain connected to a second output terminal, a second source coupled to the common node, and a second gate linked to a second RF input;
a series-connected combination of a second capacitor and a second resistor between the second gate and the second source;
a second shunt switch coupled in parallel with the second resistor and controlled by a second shunting control signal;
a second grounding switch coupled between the second gate and ground, controlled by a second grounding control signal, and wherein the controller is further configured to:
select an on-state for the second transistor by generating the second grounding control signal to command the second grounding switch into an open-state, enabling amplification of an RF signal at the second input, and concurrently generate the second shunting control signal to command the second shunting switch into a closed-state; and
select an off-state for the second transistor by generating the second grounding control signal to command the second grounding switch into a closed-state, thereby preventing amplification of RF signals at the second input and generating the second shunting control signal to command the second shunting switch into an open-state.
3 . The RF amplifier of claim 2 wherein the controller is further configured to generate the control signals such that neither of the first transistor and the second transistor are in an on-state simultaneously.
4 . The RF amplifier of claim 1 further comprising a source inductor coupled between the common node and ground.
5 . The RF amplifier of claim 1 further comprising a first gate inductor coupled between the first gate and the first input.
6 . The RF amplifier of claim 2 further comprising a second gate inductor coupled between the second gate and the second input.
7 . The RF amplifier of claim 2 wherein the first resistor and the second resistor each have a resistance between 25Ω and 75Ω.
8 . The RF amplifier of claim 2 wherein the first resistor and the second resistor each have a resistance of 50Ω±5%.
9 . The RF amplifier of claim 2 wherein the first capacitor and the second capacitor each have a capacitance between 100 pF and 200 pF.
10 . The RF amplifier of claim 2 wherein the first capacitor and the second capacitor each have a capacitance of 150 pF±10%.
11 . A method of controlling a radio frequency amplifier having a first transistor with a first drain coupled to a first output terminal, a first source coupled to a common node, and a first gate coupled to a first radio frequency (RF) input, a series-connected combination of a first capacitor and a first resistor between the first gate and the first source, a first shunt switch coupled in parallel with the first resistor and controlled by a first shunting control signal, a first grounding switch coupled between the first gate and ground, controlled by a first grounding control signal and a controller configured to generate the first grounding control signal and the first shunting control signal, the method comprising:
selecting an on-state for the first transistor by generating the first grounding control signal to command the first grounding switch into an open-state, enabling amplification of an RF signal at the first input, and concurrently generating the first shunting control signal to command the first shunting switch into a closed-state; and
selecting an off-state for the first transistor by generating the first grounding control signal to command the first grounding switch into a closed-state, thereby preventing amplification of RF signals at the first input, and generating the first shunting control signal to command the first shunting switch into an open-state.
12 . The method of controlling the radio frequency amplifier of claim 11 further having a second transistor with a second drain coupled to a second output terminal, a second source coupled to the common node, and a second gate coupled to a second radio frequency (RF) input, a series-connected combination of a second capacitor and a second resistor between the second gate and the second source, a second shunt switch coupled in parallel with the second resistor and controlled by a second shunting control signal, a second grounding switch coupled between the second gate and ground, controlled by a second grounding control signal, wherein the controller is configured to generate the second grounding control signal and the second shunting control signal, the method comprising:
selecting an on-state for the second transistor by generating the second grounding control signal to command the second grounding switch into an open-state, enabling amplification of an RF signal at the second input, and concurrently generating the second shunting control signal to command the second shunting switch into a closed-state; and
selecting an off-state for the second transistor by generating the second grounding control signal to command the second grounding switch into a closed-state, thereby preventing amplification of RF signals at the second input and generating the second shunting control signal to command the second shunting switch into an open-state.
13 . The method of controlling the RF amplifier of claim 12 further comprising generating by the controller the control signals such that neither of the first transistor and the second transistor are in an on-state simultaneously.
14 . The method of controlling the RF amplifier of claim 11 further comprising a source inductor coupled between the common node and ground.
15 . The method of controlling the RF amplifier of claim 11 further comprising a first gate inductor coupled between the first gate and the first input.
16 . The method of controlling the RF amplifier of claim 12 further comprising a second gate inductor coupled between the second gate and the second input.
17 . The method of controlling the RF amplifier of claim 12 wherein the first resistor and the second resistor each have a resistance between 25Ω and 75Ω.
18 . The method of controlling the amplifier of claim 12 wherein the first resistor and the second resistor each have a resistance of 50Ω±5%.
19 . The method of controlling the RF amplifier of claim 12 wherein the first capacitor and the second capacitor each have a capacitance between 100 pF and 200 pF.
20 . The RF amplifier of claim 12 wherein the first capacitor and the second capacitor each have a capacitance of 150 pF±10%.
21 . A wireless communication device comprising:
receive circuitry configured to receive radio frequency (RF) signals;
a baseband processor configured to process a digitized version of the RF signals received by the receive circuitry and to extract the information or data bits conveyed in the received RF signals;
transmit circuitry configured to receive encoded data from the baseband processor and to modulate a carrier signal with the encoded data; and
a radio frequency (RF) amplifier coupled to the transmit circuitry, the RF amplifier comprising:
a first transistor having a first drain connected to a first output terminal, a first source coupled to a common node, and a first gate linked to a first radio frequency (RF) input;
a series-connected combination of a first capacitor and a first resistor between the first gate and the first source;
a first shunt switch coupled in parallel with the first resistor and controlled by a first shunting control signal;
a first grounding switch coupled between the first gate and ground, controlled by a first grounding control signal; and
a controller configured to:
select an on-state for the first transistor by generating the first grounding control signal to command the first grounding switch into an open-state, enabling amplification of an RF signal at the first input, and concurrently generate the first shunting control signal to command the first shunting switch into a closed-state; and
select an off-state for the first transistor by generating the first grounding control signal to command the first grounding switch into a closed-state, thereby preventing amplification of RF signals at the first input, and generating the first shunting control signal to command the first shunting switch into an open-state.
22 . The wireless communication device of claim 21 wherein the RF amplifier further comprises:
a second transistor having a second drain connected to a second output terminal, a second source coupled to the common node, and a second gate linked to a second RF input;
a series-connected combination of a second capacitor and a second resistor between the second gate and the second source;
a second shunt switch coupled in parallel with the second resistor and controlled by a second shunting control signal;
a second grounding switch coupled between the second gate and ground, controlled by a second grounding control signal, and wherein the controller is further configured to:
select an on-state for the second transistor by generating the second grounding control signal to command the second grounding switch into an open-state, enabling amplification of an RF signal at the second input, and concurrently generate the second shunting control signal to command the second shunting switch into a closed-state; and
select an off-state for the second transistor by generating the second grounding control signal to command the second grounding switch into a closed-state, thereby preventing amplification of RF signals at the second input and generating the second shunting control signal to command the second shunting switch into an open-state.
23 . The wireless communication device of claim 22 wherein the controller of the RF amplifier is further configured to generate the control signals such that neither of the first transistor and the second transistor are in an on-state simultaneously.
24 . The wireless communication device of claim 21 wherein the RF amplifier further comprises a source inductor coupled between the common node and ground.
25 . The wireless communication device of claim 21 wherein the RF amplifier further comprises a first gate inductor coupled between the first gate and the first input.
26 . The wireless communication device of claim 22 wherein the RF amplifier further comprises a second gate inductor coupled between the second gate and the second input.
27 . The wireless communication device of claim 22 wherein the first resistor and the second resistor of the RF amplifier each have a resistance between 25Ω and 75Ω.
28 . The wireless communication device of claim 22 wherein the first resistor and the second resistor of the RF amplifier each have a resistance of 50Ω±5%.
29 . The wireless communication device of claim 22 wherein the first capacitor and the second capacitor each have a capacitance between 100 pF and 200 pF.
30 . The wireless communication device of claim 22 wherein the first capacitor and the second capacitor each have a capacitance of 150 pF±10%.