IP Library Granted Patent US 12712533
Granted Patent B1
US 12712533 · App. 19/188,069 · Granted Aug 18, 2026

Oscillators using carbon nanotubes

Inventor: James M. Cicchiello (Fort Wayne, IN)
Assignee: Northrop Grumman Systems Corporation
H03K3/353H03B5/1829H03K17/687
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Quick Facts
Patent No.
US 12712533
App. No.
19/188,069
Granted
Aug 18, 2026
Kind
B1
Abstract

An oscillator outputs a stable oscillation. The oscillator includes an amplifier, a carbon nanotube (CNT), and a power supply. The CNT extends along a resonance axis. A first end of the CNT is disposed along the resonance axis such that the first end is open. A second end of the CNT is disposed along the resonance axis and be operably coupled to the amplifier. The CNT generates a stable oscillation in response to a voltage. The amplifier includes a super-lattice castellated field effect transistor (SLCFET). The power supply applies the voltage to the oscillator.

Claims (26)

1 . An oscillator configured to output a stable oscillation, the oscillator comprising:

a super-lattice castellated field effect transistor (SLCFET) comprising a drain;

a single-walled carbon nanotube (SWCNT) extending along a resonance axis, a first end of the SWCNT along the resonance axis being open, a second end of the SWCNT along the resonance axis operably coupled to the drain of the SLCFET; and

a power supply configured to apply a voltage to the oscillator to generate the stable oscillation.

2 . The oscillator of claim 1 , wherein in response to an increase in the voltage at the SLCFET, a current within the SWCNT is increased.

3 . The oscillator of claim 1 , wherein in response to a change in the voltage at the SLCFET, negative resistance is achieved.

4 . The oscillator of claim 1 , wherein the oscillator is configured to generate a stable resonance having frequencies greater than 10 GHz.

5 . The oscillator of claim 1 , further comprising a bandpass filter configured to remove oscillations having a frequency smaller than 10 GHz.

6 . The oscillator of claim 1 , further comprising a phase matcher coupled between the SLCFET and the SWCNT, the phase matcher configured to modify a phase of waves passing from the SLCFET to the SWCNT.

7 . The oscillator of claim 1 , wherein a length of the SWCNT is configured to generate standing waves within the SWCNT.

8 . The oscillator of claim 7 , wherein the length of the SWCNT is less than 1 micron.

9 . The oscillator of claim 1 , further comprising a variable attenuator configured to modify a voltage applied to the oscillator.

10 . An oscillator configured to output a stable oscillation, the oscillator comprising:

an amplifier;

a carbon nanotube (CNT) extending along a resonance axis, a first end of the CNT along the resonance axis being open, a second end of the CNT along the resonance axis operably coupled to the amplifier, the CNT configured to generate a stable oscillation in response to a voltage; and

a power supply configured to apply the voltage to the oscillator.

11 . The oscillator of claim 10 , wherein the CNT comprises a single-walled CNT (SWCNT).

12 . The oscillator of claim 10 , wherein the amplifier comprises a field-effect transistor (FET).

13 . The oscillator of claim 10 , wherein in response to an increase in the voltage at the amplifier, a current through the CNT is increased.

14 . The oscillator of claim 10 , wherein in response to a change in the voltage at the amplifier, negative resistance is achieved.

15 . The oscillator of claim 10 , wherein the oscillator is configured to generate stable oscillations having frequencies greater than about 50 GHz.

16 . The oscillator of claim 10 , further comprising a bandpass filter configured to remove oscillations having a frequency smaller than 10 GHz.

17 . The oscillator of claim 10 , further comprising a phase matcher coupled between the amplifier and the CNT, the phase matcher configured to modify a phase of waves passing from the amplifier to the CNT.

18 . The oscillator of claim 10 , wherein a length of the CNT is configured to generate standing waves within the CNT.

19 . The oscillator of claim 18 , wherein the length of the CNT is less than 1 micron.

20 . The oscillator of claim 10 , further comprising a variable attenuator configured to modify the voltage applied to the oscillator.