Solid-state image sensor and image-capturing device
An image sensor includes a plurality of pixel blocks and a connection unit. The plurality of pixel blocks includes: a diffusion unit to which an electric charge resulting from photoelectric conversion is transferred; and a transistor containing a source electrically connected with the diffusion unit. The connection unit is electrically connected with a drain of the transistor included in each of the plurality of pixel blocks.
1 . An imaging element comprising:
a first photoelectric conversion unit which converts light into an electric charge;
a second photoelectric conversion unit which converts light into an electric charge;
a first transfer transistor which transfers the electric charge converted by the first photoelectric conversion unit;
a second transfer transistor which transfers the electric charge converted by the second photoelectric conversion unit;
a first diffusion unit to which the electric charge transferred from the first photoelectric conversion unit transistor and the electric charge transferred from the second photoelectric conversion unit by the second transfer transistor are transferred;
a first transistor electrically connected to the first diffusion unit; and
a first reset transistor electrically connected to a first supply unit to which a predetermined voltage is supplied, wherein
a gate portion of the first transfer transistor and a gate portion of the second transfer transistor are arranged such that a direction in which the electric charge converted by the first photoelectric conversion unit is transferred from the first photoelectric conversion unit to the first diffusion unit is different from a direction in which the electric charge converted by the second photoelectric conversion unit is transferred from the second photoelectric conversion unit to the first diffusion unit, and
the first transistor and the first reset transistor are connected in series to each other in a first connection path for electrically connecting the first diffusion unit and the first supply unit.
2 . The imaging element according to claim 1 ,
wherein the gate portion of the first transfer transistor and the gate portion of the second transfer transistor are arranged such that the direction in which the electric charge converted by the first photoelectric conversion unit is transferred from the first photoelectric conversion unit to the first diffusion unit is opposite to the direction in which the electric charge converted by the second photoelectric conversion unit is transferred from the second photoelectric conversion unit to the first diffusion unit.
3 . The imaging element according to claim 2 ,
wherein a gate portion of the first reset transistor is arranged in the first connection path at a position farther from the first diffusion unit than a gate portion of the first transistor.
4 . The imaging element according to claim 3 ,
the gate portion of the first transistor and the gate portion of the first reset transistor are arranged in the first connection path such that the gate portion of the first transistor and the gate portion of the first reset transistor are spaced from the first diffusion unit in that order.
5 . The imaging element according to claim 1 , further comprising:
a first amplifier transistor having a gate portion electrically connected to the first diffusion unit,
wherein the gate portion of the first amplifier transistor is arranged at a position farther from the first diffusion unit than the gate portion of the first transistor.
6 . The imaging element according to claim 5 , wherein
a gate width of the first amplifier transistor is larger than a gate width of the first transistor.
7 . The imaging element according to claim 6 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
8 . The imaging element according to claim 5 , wherein:
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
9 . The imaging element according to claim 2 , wherein
the first transistor is electrically connected to the first diffusion unit via a first wiring.
10 . The imaging element according to claim 9 , further comprising:
a first amplifier transistor having a gate portion electrically connected to the first diffusion unit,
wherein the gate portion of the first amplifier transistor is arranged at a position farther from the first diffusion unit than the gate portion of the first transistor.
11 . The imaging element according to claim 10 , wherein
a gate width of the first amplifier transistor is larger than a gate width of the first transistor.
12 . The imaging element according to claim 11 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
13 . The imaging element according to claim 10 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
14 . The imaging element according to claim 10 , wherein
the first amplifier transistor is electrically connected to the first diffusion unit via the first wiring.
15 . The imaging element according to claim 1 , further comprising:
a third photoelectric conversion unit which converts light into an electric charge;
a second diffusion unit to which the electric charge converted by the third photoelectric conversion unit is transferred; and
a second transistor connected in series with the first transistor in a second connection path for electrically connecting the first diffusion unit and the second diffusion unit, the second transistor being electrically connected to the second diffusion unit.
16 . The imaging element according to claim 15 , wherein:
the first transistor and the second transistor are arranged in the second connection path such that a distance from the first diffusion unit to the first transistor is shorter than a distance from the first transistor to the second transistor.
17 . The imaging element according to claim 15 , further comprising:
a second reset transistor electrically connected to a second supply unit to which the predetermined voltage is supplied,
wherein the second transistor and the second reset transistor are connected in series to each other in a third connection path for electrically connecting the second diffusion unit and the second supply unit.
18 . The imaging element according to claim 15 , further comprising:
a third transistor for electrically connecting the first transistor and the second transistor in the second connection path.
19 . The imaging element according to claim 15 , wherein
a gate portion of the first reset transistor is arranged in the first connection path at a position farther from the first diffusion unit than a gate portion of the first transistor.
20 . The imaging element according to claim 19 , wherein
the gate portion of the first transistor and the gate portion of the first reset transistor are arranged in the first connection path such that the gate portion of the first transistor and the gate portion of the first reset transistor are spaced from the first diffusion unit in that order.
21 . The imaging element according to claim 15 , further comprising:
a first amplifier transistor having a gate portion electrically connected to the first diffusion unit,
wherein the gate portion of the first amplifier transistor is arranged at a position farther from the first diffusion unit than the gate portion of the first transistor.
22 . The imaging element according to claim 21 , wherein
a gate width of the first amplifier transistor is larger than a gate width of the first transistor.
23 . The imaging element according to claim 22 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
24 . The imaging element according to claim 21 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
25 . The imaging element according to claim 15 , wherein
the first transistor is electrically connected to the first diffusion unit via a first wiring.
26 . The imaging element according to claim 25 , further comprising:
a first amplifier transistor having a gate portion electrically connected to the first diffusion unit,
wherein the gate portion of the first amplifier transistor is arranged at a position farther from the first diffusion unit than the gate portion of the first transistor.
27 . The imaging element according to claim 26 , wherein
a gate width of the first amplifier transistor is larger than a gate width of the first transistor.
28 . The imaging element according to claim 27 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
29 . The imaging element according to claim 26 , wherein
a gate length of the first amplifier transistor is larger than a gate length of the first transistor.
30 . The imaging element according to claim 26 , wherein
the first amplifier transistor is electrically connected to the first diffusion unit via the first wiring.
31 . An imaging device comprising:
the imaging element according to claim 2 .
32 . The imaging device according to claim 31 , further comprising:
a drive unit for driving a photographic lens that emits light to the imaging element.
33 . The imaging device according to claim 32 , further comprising:
the photographic lens.