IP Library Granted Patent US 12,713,158
Granted Patent B2
US 12,713,158 · App. 18/761,033 · Granted Aug 18, 2026

Photoelectric conversion device and optical detection system

Inventor: Yu Maehashi (Hokkaido, JP)
Assignee: Canon Kabushiki Kaisha
H04N25/773H04N25/705H04N25/709H04N25/766H04N25/7795H04N25/79H10F39/80377
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Quick Facts
Patent No.
US 12,713,158
App. No.
18/761,033
Granted
Aug 18, 2026
Kind
B2
Abstract

A photoelectric conversion device includes a plurality of pixels each including a photoelectric conversion unit configured to output a signal based on incidence of a photon, the photoelectric conversion unit including an avalanche photodiode configured to multiply a charge resulting from the incidence of the photon by avalanche multiplication, a processing circuit configured to process the signal output from the photoelectric conversion unit, and a pixel output circuit configured to control output of a signal processed by the processing circuit; a data line connected to the plurality of pixels; and a reception circuit configured to receive a pixel signal output from the plurality of pixels via the data line. An off-leakage current of a transistor constituting the reception circuit is lower than that of a transistor constituting the pixel output circuit.

Claims (40)

1 . A photoelectric conversion device comprising:

a plurality of pixels each including

a photoelectric conversion unit configured to output a signal based on incidence of a photon, the photoelectric conversion unit including an avalanche photodiode configured to multiply a charge resulting from the incidence of the photon by avalanche multiplication,

a counter configured to count the signal output from the photoelectric conversion unit, and

a pixel output circuit configured to control output of a count counted by the counter;

a data line connected to the plurality of pixels; and

a reception circuit configured to receive a pixel signal output from the plurality of pixels via the data line,

wherein an off-leakage current of a first transistor constituting the reception circuit is lower than that of a second transistor constituting the pixel output circuit,

wherein the photoelectric conversion device is configured to record time information about when the count of the counter reaches a predetermined value, and

wherein the photoelectric conversion device further comprises an acquisition unit configured to acquire a predicted count based on the time information.

2 . The photoelectric conversion device according to claim 1 , wherein a threshold voltage of the first transistor has an absolute value greater than that of a threshold voltage of the second transistor.

3 . The photoelectric conversion device according to claim 1 , wherein an off-leakage current of a third transistor constituting the counter is lower than that of the second transistor constituting the pixel output circuit.

4 . The photoelectric conversion device according to claim 3 , wherein a threshold voltage of the third transistor has an absolute value greater than that of a threshold voltage of the second transistor.

5 . The photoelectric conversion device according to claim 1 , wherein the pixel output circuit is an open-drain buffer circuit.

6 . The photoelectric conversion device according to claim 5 , wherein each of the first and second transistors constitutes a part of an electrical path extending from a power supply voltage node to a reference voltage node via the data line.

7 . The photoelectric conversion device according to claim 5 , wherein the data line includes a pair of signal lines configured to output a non-inverted signal and an inverted signal of the pixel signal.

8 . The photoelectric conversion device according to claim 1 , wherein the pixel output circuit is a buffer circuit.

9 . The photoelectric conversion device according to claim 1 , wherein the first transistor has a gate width greater than that of the second transistor.

10 . The photoelectric conversion device according to claim 1 , wherein the reception circuit includes a reset circuit configured to reset a voltage of the data line.

11 . The photoelectric conversion device according to claim 1 , wherein the reception circuit includes a determination circuit configured to determine a signal level of the data line.

12 . The photoelectric conversion device according to claim 1 , wherein the pixel output circuit is configured to, if the count reaches the predetermined value, control output of the time information.

13 . The photoelectric conversion device according to claim 1 , further comprising a first substrate where the avalanche diode is disposed and a second substrate where the counter, the pixel output circuit, and the reception circuit are disposed, the first and second substrates being stacked on each other.

14 . An optical detection system comprising:

the photoelectric conversion device according to claim 1 ; and

a signal processing apparatus configured to process a signal output from the photoelectric conversion device.

15 . The optical detection system according to claim 14 , wherein the signal processing apparatus is configured to generate a distance image indicating distance information about an object based on the signal.

16 . A moving body comprising:

the photoelectric conversion device according to claim 1 ;

a distance information acquisition unit configured to acquire distance information about an object from a parallax image based on a signal output from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.

17 . An optical detection system comprising:

a photoelectric conversion device comprising a plurality of pixels each including

a photoelectric conversion unit configured to output a signal based on incidence of a photon, the photoelectric conversion unit including an avalanche photodiode configured to multiply a charge resulting from the incidence of the photon by avalanche multiplication,

a counter configured to count the signal output from the photoelectric conversion unit, and

a pixel output circuit configured to control output of a count counted by the counter;

a data line connected to the plurality of pixels; and

a reception circuit configured to receive a pixel signal output from the plurality of pixels via the data line,

wherein an off-leakage current of a first transistor constituting the reception circuit is lower than that of a second transistor constituting the pixel output circuit,

wherein the photoelectric conversion device is configured to record time information about when the count of the counter reaches a predetermined value, and

wherein the optical detection system further includes an acquisition apparatus configured to acquire a predicted count based on the time information.