Semiconductor device and method for fabricating the same
A method for fabricating a semiconductor device includes forming a stack body by sequentially forming a first layer, a second layer, a third layer, a fourth layer, and a fifth layer over a lower structure; forming an opening in the stack body; forming a capping layer that exposes an edge of the third layer by horizontally recessing the second layer and the fourth layer from the opening; forming a liner structure on the capping layer and an edge of the third layer; forming a sacrificial liner material over the liner structure; recessing the sacrificial liner material and the liner structure to expose an edge of the third layer; forming a third layer pattern by recessing an exposed edge of the third layer; and forming a data storage element that is coupled to the third layer pattern.
1 . A method for fabricating a semiconductor device, the method comprising:
forming a stack body by sequentially forming a first layer, a second layer, a third layer, a fourth layer, and a fifth layer over a lower structure;
forming an opening in the stack body;
forming a capping layer that exposes an edge of the third layer by horizontally recessing the second layer and the fourth layer from the opening;
forming a liner structure on the capping layer and an edge of the third layer;
forming a sacrificial liner material over the liner structure;
recessing the sacrificial liner material and the liner structure to expose the edge of the third layer;
forming a third layer pattern by recessing the exposed edge of the third layer; and
forming a data storage element that is coupled to the third layer pattern.
2 . The method of claim 1 , further comprising:
before forming the third layer pattern,
forming an additional liner material that covers the recessed sacrificial liner material and the recessed liner structure.
3 . The method of claim 1 , wherein forming the liner structure includes:
forming a first liner material on the edge of the third layer by an oxidation process; and
conformally depositing a second liner material over the first liner material.
4 . The method of claim 1 , wherein the liner structure includes silicon oxide.
5 . The method of claim 1 , wherein the sacrificial liner material includes silicon nitride.
6 . The method of claim 1 , wherein forming the data storage element includes:
forming a first electrode that is coupled to the third layer pattern;
exposing an outer wall of the first electrode by selectively recessing the first layer, the fifth layer, and a portion of the liner structure;
forming a dielectric layer over the first electrode; and
forming a second electrode over the dielectric layer.
7 . The method of claim 1 , wherein the data storage element includes a capacitor.
8 . The method of claim 1 , wherein the third layer includes a semiconductor material or an oxide semiconductor material.
9 . The method of claim 1 , wherein the third layer includes a monocrystalline silicon layer.
10 . The method of claim 1 , wherein the first layer and the fifth layer include silicon oxide, and the second layer and the fourth layer include silicon nitride.
11 . A method for fabricating a semiconductor device, the method comprising:
forming a stack body by sequentially forming a first layer, a second layer, a third layer, a fourth layer, and a fifth layer over a lower structure;
forming a first opening in the stack body;
through the first opening, replacing a portion of the second layer and a portion of the fourth layer with horizontal conductive lines;
forming a vertical conductive line that is coupled to a first edge of the third layer while filling the first opening;
forming a second opening in the stack body;
forming a capping layer that exposes a second edge of the third layer by horizontally recessing the second layer and the fourth layer from the second opening;
forming a liner structure over the capping layer and the second edge of the third layer;
forming a sacrificial liner material over the liner structure;
recessing the sacrificial liner material and the liner structure to expose the second edge of the third layer;
forming a third layer pattern by recessing the exposed second edge of the third layer; and
forming a data storage element that is coupled to the third layer pattern.
12 . The method of claim 11 , further comprising:
before forming the third layer pattern,
forming an additional liner material that covers the recessed sacrificial liner material and the recessed liner structure.
13 . The method of claim 11 , wherein forming the liner structure includes:
forming a first liner material over the second edge of the third layer by an oxidation process; and
depositing a second liner material conformally over the first liner material.
14 . The method of claim 11 , wherein the liner structure includes silicon oxide.
15 . The method of claim 11 , wherein the sacrificial liner material includes silicon nitride.
16 . The method of claim 11 , wherein forming the data storage element includes:
forming a first electrode that is coupled to the third layer pattern;
exposing an outer wall of the first electrode by selectively recessing the first layer, the fifth layer, and a portion of the liner structure;
forming a dielectric layer over the first electrode; and
forming a second electrode over the dielectric layer.
17 . The method of claim 11 , wherein the data storage element includes a capacitor.
18 . The method of claim 11 , wherein the third layer includes a semiconductor material or an oxide semiconductor material.
19 . The method of claim 11 , wherein the third layer includes a monocrystalline silicon layer.
20 . The method of claim 11 , wherein the first layer and the fifth layer include silicon oxide, and
the second layer and the fourth layer include silicon nitride.