IP Library › Granted Patent US 12713587
Granted Patent B2
US 12713587 · App. 18/244,456 · Granted Aug 18, 2026

Semiconductor device

Inventors: Jooncheol Kim (Suwon-si, KR); Kanguk Kim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10B12/482H10B12/34H10B12/50
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Quick Facts
Patent No.
US 12713587
App. No.
18/244,456
Granted
Aug 18, 2026
Kind
B2
Abstract

A semiconductor device includes a substrate including a cell region and a core/peripheral region, a bit line structure disposed on the substrate of the cell region and including a polysilicon structure, a barrier pattern, a metal pattern and a capping pattern that are stacked on each other, and a gate structure on the substrate of the core/peripheral region, the gate structure including a gate insulation pattern, a polysilicon pattern, a carbon-containing pattern, a barrier structure, a metal pattern and a capping pattern that are stacked on each other.

Claims (70)

1 . A semiconductor device comprising:

a substrate including a cell region and a core/peripheral region;

a bit line structure disposed on the substrate of the cell region and including a polysilicon structure, a barrier pattern, a metal pattern, and a capping pattern that are stacked on each other; and

a gate structure disposed on the substrate of the core/peripheral region and including a gate insulation pattern, a polysilicon pattern, a carbon-containing pattern, a barrier structure, a metal pattern, and a capping pattern that are stacked on each other,

wherein the gate insulation pattern is disposed at a bottom of the gate structure, the capping pattern of the gate structure is disposed at a top of the gate structure, and

wherein the polysilicon pattern is disposed on the gate insulation pattern, the carbon-containing pattern is disposed on the polysilicon pattern, the barrier structure is disposed on the carbon-containing pattern, and the metal pattern of the gate structure is disposed between the barrier structure and the capping pattern of the gate structure.

2 . The semiconductor device of claim 1 ,

wherein the carbon-containing pattern includes a polysilicon layer doped with at least carbon.

3 . The semiconductor device of claim 1 ,

wherein the carbon-containing pattern includes a polysilicon layer including carbon and nitrogen.

4 . The semiconductor device of claim 1 ,

wherein a thickness of the barrier pattern of the bit line structure is less than a thickness of the barrier structure of the gate structure.

5 . The semiconductor device of claim 1 ,

wherein the barrier pattern of the bit line structure and the barrier structure of the gate structure include the same material.

6 . The semiconductor device of claim 1 ,

wherein the barrier pattern of the bit line structure and the barrier structure of the gate structure include at least one selected from silicon-doped titanium nitride (TiSiN), Ti, TiN, TaC, TaCN, TaSiN, TaN, WN, and a combination thereof.

7 . The semiconductor device of claim 1 ,

wherein the polysilicon pattern of the gate structure is doped with N-type or P-type impurities.

8 . The semiconductor device of claim 1 ,

wherein the barrier pattern of the bit line structure has a thickness selected from a range of about 10 Å to about 50 Å.

9 . A semiconductor device comprising:

a substrate including a cell region and a core/peripheral region;

a buried gate structure disposed in a gate trench at the substrate of the cell region and extending in a first direction parallel to an upper surface of the substrate;

a bit line structure disposed on the buried gate structure and the substrate and extending in a second direction perpendicular to the first direction;

a contact plug contacting the substrate and being spaced apart from the bit line structure;

a capacitor contacting an upper surface of the contact plug; and

a gate structure on the substrate of the core/peripheral region,

wherein the bit line structure includes a polysilicon structure, a first barrier pattern, a first metal pattern, and a first capping pattern that are sequentially stacked on each other,

wherein the gate structure includes a gate insulation pattern, a polysilicon pattern, a carbon-containing pattern, a second barrier pattern, a third barrier pattern, a second metal pattern, and a second capping pattern that are sequentially stacked on each other,

wherein the gate insulation pattern is disposed at a bottom of the gate structure, the second capping pattern is disposed at a top of the gate structure,

wherein the polysilicon pattern is disposed on the gate insulation pattern, the carbon-containing pattern is disposed on the polysilicon pattern, the second barrier pattern is disposed on the carbon-containing pattern, the third barrier pattern is disposed on the second barrier pattern, and the second metal pattern is disposed between the third barrier pattern and the second capping pattern,

wherein the third barrier pattern of the gate structure and the first barrier pattern of the bit line structure include the same material,

wherein the second metal pattern of the gate structure and the first metal pattern of the bit line structure include the same material, and

wherein the second capping pattern of the gate structure and the first capping pattern of the bit line structure include the same material.

10 . The semiconductor device of claim 9 ,

wherein the carbon-containing pattern includes a polysilicon layer including carbon and nitrogen.

11 . The semiconductor device of claim 9 ,

wherein a thickness of the carbon-containing pattern is less than a thickness of the second barrier pattern of the gate structure.

12 . The semiconductor device of claim 9 ,

wherein the first to third barrier patterns include the same material.

13 . The semiconductor device of claim 9 ,

wherein the second and third barrier patterns of the gate structure form a barrier structure of the gate structure, and

wherein a thickness of the barrier structure of the gate structure is greater than a thickness of the first barrier pattern of the bit line structure.

14 . The semiconductor device of claim 9 ,

wherein the carbon-containing pattern of the gate structure includes no metal, and

wherein the second and third barrier patterns of the gate structure include a metal.

15 . The semiconductor device of claim 9 ,

wherein the polysilicon pattern of the gate structure is doped with N-type or P-type impurities.

16 . The semiconductor device of claim 9 ,

wherein each of an upper surface of the polysilicon structure of the bit line structure and an upper surface of the polysilicon pattern of the gate structure is flat.

17 . A semiconductor device, comprising:

a substrate divided into a cell region and a core/peripheral region, wherein the substrate includes an isolation pattern and an active pattern;

a buried gate structure disposed in a gate trench at the substrate of the cell region and extending in a first direction parallel to an upper surface of the substrate;

buffer insulation patterns on the substrate of the cell region;

a bit line structure contacting upper surfaces of the buffer insulation patterns and an upper surface of the active pattern between the buffer insulation patterns, wherein the bit line structure extends in a second direction parallel to the upper surface of the substrate and perpendicular to the first direction;

a contact plug contacting the active pattern and being spaced apart from the bit line structure;

a capacitor contacting an upper surface of the contact plug; and

a gate structure disposed on the substrate of the core/peripheral region and having a line width greater than a line width of the bit line structure,

wherein the bit line structure includes a polysilicon structure, a barrier pattern, a first metal pattern and a first capping pattern that are sequentially stacked on each other,

wherein the gate structure includes a gate insulation pattern, a polysilicon pattern, a carbon-containing pattern, a barrier structure, a second metal pattern and a second capping pattern that are sequentially stacked on each other,

wherein the gate insulation pattern is disposed at a bottom of the gate structure, the second capping pattern is disposed at a top of the gate structure,

wherein the polysilicon pattern is disposed on the gate insulation pattern, the carbon-containing pattern is disposed on the polysilicon pattern, the barrier structure is disposed on the carbon-containing pattern, and the second metal pattern is disposed between the barrier structure and the second capping pattern, . . .

wherein the first metal pattern of the bit line structure and the second metal pattern of the gate structure include the same material, and

wherein the first capping pattern of the bit line structure and the second capping pattern of the gate structure include the same material.

18 . The semiconductor device of claim 17 ,

wherein a thickness of the barrier structure in the gate structure is greater than a thickness of the barrier pattern in the bit line structure.

19 . The semiconductor device of claim 17 ,

wherein the carbon-containing pattern includes a polysilicon layer including carbon and nitrogen.

20 . The semiconductor device of claim 17 ,

wherein the polysilicon pattern is doped with N-type or P-type impurities.