Memory device including preformed recesses between contact structures and control gates

1 . An apparatus comprising:

tiers located one over another over a substrate, the tiers including conductive materials that form part of respective control gates for memory cells of the apparatus;

a staircase structure formed in the tiers, the conductive materials including respective portions that collectively form a part of the staircase structure, the staircase structure including a sidewall on a side of the staircase structure;

a dielectric liner formed on the sidewall at a slanted angle with respect to the substrate;

recesses formed in respective tiers and adjacent the sidewall such that respective portions of the dielectric liner are located in the recesses; and

a contact structure extending through a portion of the dielectric liner, wherein the portions of the dielectric liner are between the contact structure and the conductive materials, the contact structure is electrically separated from the conductive materials, and the contact structure does not extend through the tiers.

2 . The apparatus of claim 1 , wherein the portions of the dielectric liner include silicon dioxide.

3 . The apparatus of claim 1 , wherein the dielectric liner includes:

silicon dioxide, and the portions of the dielectric liner are part of the silicon dioxide; and

silicon nitride adjacent the silicon dioxide, and the contact structure extending through the silicon nitride and the silicon dioxide.

4 . The apparatus of claim 1 , further comprising a conductive contact adjacent the contact structure and contacting one of the conductive materials, wherein the conductive contact and the contact structure have different lengths.

5 . The apparatus of claim 1 , wherein the contact structure includes a conductive core and a dielectric liner adjacent the conductive core, wherein the conductive core and the dielectric liner of the contact structure extend through the portion of the dielectric liner.

6 . The apparatus of claim 5 , wherein the dielectric liner of the contact structure has a same material as the portions of the dielectric liner in the recesses.

7 . The apparatus of claim 1 , wherein the apparatus comprises a memory device, the memory device including circuitry located under the tiers, and the contact structure is coupled to the circuitry.

8 . An apparatus comprising:

tiers located one over another over a substrate, the tiers including conductive materials;

a staircase structure formed in the tiers, the conductive materials including respective portions that collectively form a part of the staircase structure, the staircase structure including a first sidewall on a first side of the staircase, and a second sidewall on a second side opposite the first side of the staircase;

a first dielectric liner formed on the first sidewall at a first slanted angle with respect to the substrate;

a second dielectric liner formed on the second sidewall at a second slanted angle with respect to the substrate;

first recesses formed in respective tiers and adjacent the first sidewall such that respective portions of the first dielectric liner are located in the first recesses;

second recesses formed in respective tiers and adjacent the second sidewall such that respective portions of the second dielectric liner are located in the second recesses;

a first contact structure extending through a portion of the first dielectric liner, wherein the portions of the first dielectric liner are between the first contact structure and a first portion of the conductive materials, the first contact structure is electrically separated from the conductive materials, and the first contact structure does not extend through the tiers; and

a second contact structure extending through a portion of the second dielectric liner, wherein the portions of the second dielectric liner are between the second contact structure and a second portion of the conductive materials, the second contact structure is electrically separated from the conductive materials, and the second contact structure does not extend through the tiers.

9 . The apparatus of claim 8 , wherein the first and second contact structures have a same length.

10 . The apparatus of claim 8 , wherein:

the portions of the first dielectric liner include silicon dioxide adjacent the first portion of the conductive materials; and

the portions of the second dielectric liner include silicon dioxide adjacent the second portion of the conductive materials.

11 . The apparatus of claim 10 , wherein:

the first dielectric liner includes silicon nitride adjacent the silicon dioxide of the first dielectric liner; and

the second dielectric liner includes silicon nitride adjacent the silicon dioxide of the second dielectric liner.

12 . The apparatus of claim 11 , wherein:

the first contact structure extends through the silicon nitride and the silicon dioxide of the first dielectric liner; and

the second contact structure extends through the silicon nitride and the silicon dioxide of the second dielectric liner.

13 . The apparatus of claim 8 , further comprising a third contact structure adjacent the first and second contact structures and having a length in a same direction with respective lengths of the first and second contact structures.

14 . The apparatus of claim 13 , wherein the first, second, and third contact structures have a same length.