Semiconductor device with reduced electric resistance difference
A semiconductor device includes a plurality of insulating layers, a plurality of conductive layers that are formed alternately with the plurality of insulating layers, an interlayer film, and a channel. The interlayer film is different from the conductive layer, has a crystal structure of a hexagonal crystal system, and is formed between at least one of the insulating layers and at least one of the conductive layers. The channel penetrates through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers.
1 . A semiconductor device comprising:
a plurality of insulating layers;
a plurality of conductive layers that are disposed alternately with the plurality of insulating layers;
an interlayer film being different from the plurality of conductive layers, the interlayer film having a crystal structure of a hexagonal crystal system, and being disposed between at least one of the insulating layers and at least one of the conductive layers; and
a channel penetrating through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers;
wherein the plurality of conductive layers include a first conductive layer and a second conductive layer provided above the first conductive layer, a crystal grain size of the first conductive layer is equal to a crystal grain size of the second conductive layer.
2 . The semiconductor device according to claim 1 , wherein the conductive layers have a crystal structure of a cubic system.
3 . The semiconductor device according to claim 1 , wherein the conductive layers have a three-dimensional crystal structure, and
the interlayer film has a two-dimensional crystal structure.
4 . The semiconductor device according to claim 3 , wherein the two-dimensional crystal includes a hexagonal crystal-based layer.
5 . The semiconductor device according to claim 1 , wherein the conductive layers contain a transition element or carbon, and
the interlayer film contains a transition element of dichalcogenide or graphene.
6 . The semiconductor device according to claim 1 , wherein the conductive layers contain at least one of W, Mo, Ti, or Nb, and
the interlayer film contains at least one of WS 2 , MoS 2 , TiS 2 , NbS 2 , or C.
7 . The semiconductor device according to claim 6 , wherein the interlayer film contains at least one of WS 2 , MoS 2 , TiS 2 , or NbS 2 .
8 . The semiconductor device according to claim 1 , wherein the interlayer film is thinner than each of the conductive layers and the insulating layer.
9 . The semiconductor device according to claim 1 , wherein the semiconductor device includes a NAND memory.
10 . The semiconductor device according to claim 1 , wherein the insulating layers are formed of an inorganic oxide or an inorganic nitride.
11 . The semiconductor device according to claim 1 , wherein the conductive layers are formed of a single-metal body.
12 . The semiconductor device according to claim 1 , wherein the conductive layers are formed of a transition metal.
13 . The semiconductor device according to claim 1 , wherein the channel includes a semiconductor layer.
14 . The semiconductor device according to claim 1 , wherein the interlayer film is not provided between the conductive layers and the channel in a first direction crossing to a stacking direction of the insulating layers and the conductive layers.
15 . A semiconductor device comprising:
a plurality of insulating layers;
a plurality of conductive layers that are disposed alternately with the plurality of insulating layers;
a channel penetrating through the plurality of conductive layers and the plurality of insulating layers; and
a region containing at least one of S, Se, or Te, at a boundary area between at least one of the conductive layers and at least one of the insulating layers.
16 . The semiconductor device according to claim 15 , wherein the plurality of insulating layers includes a first conductive layer and a second conductive layer provided above the first conductive layer, a crystal grain size of the first conductive layer is equal to a crystal grain size of the second conductive layer.
17 . The semiconductor device according to claim 16 , wherein the region contains at least one of WS 2 , MoS 2 , TiS 2 , or NbS 2 .
18 . A semiconductor device comprising:
a plurality of insulating layers;
a plurality of conductive layers that are disposed alternately with the plurality of insulating layers;
an interlayer film being different from the plurality of conductive layers, the interlayer film having a crystal structure of a hexagonal crystal system, and being disposed between at least one of the insulating layers and at least one of the conductive layers; and
a channel penetrating through the plurality of conductive layers, the interlayer film, and the plurality of insulating layers,
wherein the conductive layers contain a transition element, and the interlayer film contains a transition element of dichalcogenide.
19 . The semiconductor device according to claim 18 , wherein the interlayer film contains at least one of WS 2 , MoS 2 , TiS 2 , or NbS 2 .
20 . The semiconductor device according to claim 18 , wherein the plurality of insulating layers includes a first conductive layer and a second conductive layer provided above the first conductive layer, a crystal grain size of the first conductive layer is equal to a crystal grain size of the second conductive layer.