Wire bonds for galvanic isolation device
A microelectronic device includes a galvanic isolation component having a lower isolation element over a substrate with lower bond pads connected to the lower isolation element, a dielectric plateau over the lower isolation element that does not extend to the lower bond pads, and an upper isolation element and upper bond pads over the dielectric plateau. The upper bond pads are laterally separated from the lower bond pads by an isolation distance. The microelectronic device includes high voltage wire bonds on the upper bond pads that extend upward, within 10 degrees of vertical, for a vertical distance greater than the isolation distance. The microelectronic device further includes low voltage wire bonds on the lower bond pads that have a loop height directly over a perimeter of the substrate that is less than 5 times a wire diameter of the low voltage wire bonds.
1 . A microelectronic device, comprising:
an isolation component, including:
a substrate;
a lower isolation element over the substrate;
lower bond pads connected to the lower isolation element;
a dielectric plateau over the lower isolation element, wherein the dielectric plateau does not extend to the lower bond pads;
an upper isolation element over the dielectric plateau; and
upper bond pads connected to the upper isolation element, laterally separated from the lower bond pads by an isolation distance;
high voltage wire bonds on the upper bond pads, wherein the high voltage wire bonds extend upward, within 10 degrees of vertical, for a vertical distance greater than the isolation distance; and
low voltage wire bonds on the lower bond pads, wherein the low voltage wire bonds have a loop height over the substrate that is less than 5 times a wire diameter of the low voltage wire bonds.
2 . The microelectronic device of claim 1 , wherein the high voltage wire bonds and the low voltage wire bonds extend away from each other at an isolation angle greater than 60 degrees.
3 . The microelectronic device of claim 1 , wherein the dielectric plateau is less than 90 microns away from a center of one of the lower bond pads.
4 . The microelectronic device of claim 1 , wherein the high voltage wire bonds include ball bonds on the upper bond pads.
5 . The microelectronic device of claim 1 , wherein the low voltage wire bonds include ball bonds on the lower bond pads.
6 . The microelectronic device of claim 1 , wherein the low voltage wire bonds include stand-off stitch bonds on the lower bond pads.
7 . The microelectronic device of claim 1 , wherein the low voltage wire bonds include ball bonds with folded wire configurations on the lower bond pads.
8 . The microelectronic device of claim 1 , wherein the low voltage wire bonds and the high voltage wire bonds include palladium-coated copper bonding wires.
9 . The microelectronic device of claim 1 , further comprising an encapsulant material contacting the isolation component and surrounding the high voltage wire bonds and the low voltage wire bonds.
10 . A microelectronic device, comprising:
an isolation transformer, including:
a substrate;
a lower winding over the substrate;
lower bond pads connected to the lower winding;
a dielectric plateau over the lower winding, wherein the dielectric plateau does not extend to the lower bond pads;
an upper winding over the dielectric plateau; and
upper bond pads connected to the upper winding, laterally separated from the lower bond pads by an isolation distance;
high voltage wire bonds on the upper bond pads, wherein the high voltage wire bonds extend upward, within 10 degrees of vertical, for a vertical distance greater than the isolation distance; and
low voltage wire bonds on the lower bond pads, wherein the low voltage wire bonds have a loop height over the substrate that is less than 5 times a wire diameter of the low voltage wire bonds.
11 . The microelectronic device of claim 10 , wherein the dielectric plateau is less than 90 microns away from a center of one of the lower bond pads.
12 . The microelectronic device of claim 10 , wherein the high voltage wire bonds include ball bonds on the upper bond pads.
13 . The microelectronic device of claim 10 , wherein the low voltage wire bonds include ball bonds on the lower bond pads.
14 . The microelectronic device of claim 10 , wherein the low voltage wire bonds include stand-off stitch bonds on the lower bond pads.
15 . The microelectronic device of claim 10 , wherein the low voltage wire bonds include ball bonds with folded wire configurations on the lower bond pads.