Semiconductor device
A semiconductor device includes a first conductive layer, a first insulating layer on the first conductive layer, an oxide semiconductor layer on the first insulating layer, and second and third conductive layers on the oxide semiconductive layer. The oxide semiconductor layer includes a first region, a second region in contact with the second conductive layer, a third region in contact with the third conductive layer, a first impurity region between the first region and the second region, and a second impurity region between the first region and the third region. The first impurity region is in contact with the second conductive layer. The second impurity region is in contact with the third conductive layer. An electrical conductivity of each of the first impurity region and the second impurity region is greater than an electrical conductivity of each of the second region and the third region.
1 . A semiconductor device comprising:
a first conductive layer on an insulating surface;
a first insulating layer on the first conductive layer;
an oxide semiconductor layer on the first insulating layer;
a second conductive layer on the oxide semiconductive layer;
a third conductive layer on the oxide semiconductive layer;
a first connection electrode on the insulating surface, the first connection electrode comprising a third impurity region; and
a second connection electrode on the first connection electrode, the second connection electrode being in contact with the third impurity region,
wherein the oxide semiconductor layer comprises:
a first region;
a second region in contact with the second conductive layer;
a third region in contact with the third conductive layer;
a first impurity region between the first region and the second region, the first impurity region being in contact with the second conductive layer; and
a second impurity region between the first region and the third region, the second impurity region being in contact with the third conductive layer, and
an electrical conductivity of each of the first impurity region and the second impurity region is greater than an electrical conductivity of each of the second region and the third region.
2 . The semiconductor device according to claim 1 , wherein an impurity element contained in each of the first impurity region and the second impurity region is one selected from boron, phosphorus, argon, and nitrogen.
3 . The semiconductor device according to claim 1 , wherein an impurity element contained in each of the first impurity region, the second impurity region, and the third impurity region is one selected from boron, phosphorus, argon, and nitrogen.
4 . The semiconductor device according to claim 3 , wherein a concentration of the impurity element in at least one of the first impurity region, the second impurity region, and the third impurity region is greater than or equal to 1.0×10 16 atoms/cm 3 .
5 . The semiconductor device according to claim 1 , wherein the first connection electrode is a same layer as the first conductive layer.
6 . The semiconductor device according to claim 1 , wherein the second connection electrode is a same layer as the second conductive layer and the third conductive layer.
7 . A semiconductor device comprising:
a first conductive layer on an insulating surface;
a first insulating layer on the first conductive layer;
an oxide semiconductor layer on the first insulating layer;
a second insulating layer on the oxide semiconductor layer;
a second conductive layer on the second insulating layer;
a third conductive layer on the second insulating layer;
a first connection electrode on the insulating surface, the first connection electrode comprising a third impurity region; and
a second connection electrode on the first connection electrode, the second connection electrode being in contact with the third impurity region,
wherein the oxide semiconductor layer comprises:
a first region in contact with the second insulating layer;
a second region in contact with the second insulating layer and overlapping the second conductive layer;
a third region in contact with the second insulating layer and overlapping the third conductive layer;
a first impurity region between the first region and the second region, the first impurity region being in contact with the second conductive layer; and
a second impurity region between the first region and the third region, the second impurity region being in contact with the third conductive layer, and
an electrical conductivity of each of the first impurity region and the second impurity region is greater than an electrical conductivity of each of the second region and the third region.
8 . The semiconductor device according to claim 7 , wherein an impurity element contained in each of the first impurity region and the second impurity region is one selected from boron, phosphorus, argon, and nitrogen.
9 . The semiconductor device according to claim 7 , wherein an impurity element contained in each of the first impurity region, the second impurity region, and the third impurity region is one selected from boron, phosphorus, argon, and nitrogen.
10 . The semiconductor device according to claim 9 , wherein a concentration of the impurity element in at least one of the first impurity region, the second impurity region, and the third impurity region is greater than or equal to 1.0×10 16 atoms/cm 3 .
11 . The semiconductor device according to claim 7 , wherein the first connection electrode is a same layer as the first conductive layer.
12 . The semiconductor device according to claim 7 , wherein the second connection electrode is a same layer as the second conductive layer and the third conductive layer.