Semiconductor structure with nitride caps

1 . A semiconductor structure, comprising:

a patterned material comprising:

a plurality of active areas;

a first conductive material on a surface of each active area of the plurality of active areas;

a first metal material on a surface of each first conductive material;

a second conductive material, a third conductive material comprising a digit line material, and a first dielectric material, wherein the first dielectric material is on a surface of the third conductive material and the third conductive material is on a surface of the second conductive material;

a first nitride material adjacent each vertical side of the second conductive material, the third conductive material, and the first dielectric material; and

a second nitride material on a first horizontal surface of each first nitride material and each first dielectric material to provide a nitride cap; and

a second metal material.

2 . The semiconductor structure of claim 1 , wherein a first portion of the second nitride material has a height of at least 5.0 nanometers (nm).

3 . The semiconductor structure of claim 1 , wherein a first portion of the second nitride material has a height of at least 20 nm.

4 . The semiconductor structure of claim 1 , wherein the second conductive material is a tungsten (W), titanium (Ti), or a tungsten titanium alloy.

5 . The semiconductor structure of claim 1 , wherein the first dielectric material is a silica carbon nitride (SiCN), a silicon oxynitride (SiON), a silicon oxide (SiOx), a doped SiOx, a phosphosilicate glass, a borosilicate glass, a borophosphosilicate glass, a fluorosilicate glass, or a tetraethylorthosilicate (TEOS).

6 . The semiconductor structure of claim 1 , wherein the second conductive material is a titanium-based materials.

7 . The semiconductor structure of claim 1 , wherein the first metal material is a tungsten material.

8 . A method of forming a semiconductor structure, comprising:

forming a patterned material comprising a plurality of active areas, a cobalt monosilicide (CoSi) material on a surface of each active area, a first metal material on a surface of each cobalt monosilicide (CoSi) material, a plurality of stacked layers including a second conductive material, a third conductive material, a first dielectric material, and a third nitride material, wherein the first dielectric material is on a surface of the third conductive material and the third conductive material is on a surface of the second conductive material, and a first nitride material separating each active area, each cobalt monosilicide (CoSi) material, and each first metal material from each stacked layer;

selectively removing a portion of the first nitride material, the third nitride material, and a portion of the first dielectric material to expose a plurality of sidewalls of the first metal material and create a first vertical opening;

depositing a second nitride material around the sidewalls of the first metal material and on a surface of the first nitride material and a surface of the first dielectric material to form a nitride cap;

depositing a carbon-based material on the second nitride material;

removing the carbon-based material and a first portion of the second nitride material to form a plurality of second vertical opening;

depositing a second metal material in the plurality of second vertical opening and on the surface of the second nitride material; and

removing a second portion of the second nitride material and a portion of the first metal material.

9 . The method of claim 8 , comprising depositing the second nitride material with atomic layer deposition (ALD).

10 . The method of claim 8 , comprising forming the third nitride material as a dielectric material.

11 . The method of claim 8 , comprising depositing the third conductive material as a digit line material.

12 . The method of claim 8 , comprising selectively removing the portion of the first nitride material and the third nitride material a distance of 5 to 20 nanometers (nm).

13 . A method of forming a semiconductor structure, comprising:

forming a patterned material comprising a plurality of active areas, a first conductive material on a surface of each active area, a first metal material on a surface of each first conductive material, a plurality of stacked layers including a second conductive material, a third conductive material, a first dielectric material, and a third nitride material, and a first nitride material adjacent each stacked layer;

selectively removing a portion of the first nitride material and the third nitride material to create a first vertical opening;

forming a second nitride material on a remaining portion of the first nitride material, the first dielectric material, and the first metal material to form a nitride cap;

removing a first portion of the second nitride material to form a plurality of second vertical openings;

depositing a second metal material in the plurality of second vertical openings; and

etching a second portion of the second metal material and a portion of the second nitride material.

14 . The method of claim 13 , comprising depositing the third conductive material as a digit line material.

15 . The method of claim 13 , comprising etching the portion of the first nitride material a distance of 5 to 20 nanometers (nm).

16 . The method of claim 13 , further comprising forming the third nitride material as a dielectric material.

17 . The method of claim 13 , comprising depositing a carbon-based material on the second nitride material subsequent to forming the second nitride material.

18 . The method of claim 13 , comprising depositing the second metal material as a tungsten (W) material.