Semiconductor device
A semiconductor device may include a substrate including a Keep-Out Zone (KOZ) and a layout finishing cell region, a through silicon via (TSV) penetrating the substrate and surrounded by the KOZ; an ESD diode on an upper surface of the substrate, a driver circuit, gate structures, and metal wirings electrically connecting the TSV, the ESD diode, and the driver circuit. The layout finishing cell region may surround the KOZ and the ESD diode. The driver circuit may be adjacent to and outside the layout finishing cell region. The substrate may include active regions extending from an end inside the layout finishing cell region. The gate structures may intersect the active regions to form semiconductor components. The driver circuit may include at least some of the semiconductor components.
1 . A semiconductor device comprising:
a substrate including a Keep-Out Zone (KOZ) and a layout finishing cell region;
a through silicon via (TSV) penetrating through the substrate, the TSV being surrounded by the KOZ;
an electrostatic discharge (ESD) diode on an upper surface of the substrate;
a driver circuit on the upper surface of the substrate;
metal wirings configured to electrically connect the TSV, the ESD diode, and the driver circuit;
a plurality of first gate structures; and
a plurality of second gate structures on the substrate, wherein
the layout finishing cell region surrounds KOZ and the ESD diode and is around the TSV,
the substrate includes a plurality of first active regions extending in parallel in a first direction from the layout finishing cell region to an outside region, the outside region being outside the layout finishing cell region,
the plurality of first gate structures extend in a second direction and intersect the plurality of first active regions,
the first direction is parallel to the upper surface of the substrate and intersects the second direction,
the plurality of second gate structures extend in parallel in the second direction from the layout finishing cell region to the outside region, and
the substrate includes a plurality of second active regions extending in the first direction and intersecting the plurality of second gate structures.
2 . The semiconductor device of claim 1 , wherein
the driver circuit is adjacent to the layout finishing cell region and outside the layout finishing cell region, and
the driver circuit includes first semiconductor components provided by the plurality of first gate structures and the plurality of first active regions.
3 . The semiconductor device of claim 2 , further comprising:
one or more logic cells adjacent to the driver circuit, wherein
the one or more logic cells include second semiconductor components provided by the plurality of first gate structures and the plurality of first active regions.
4 . The semiconductor device of claim 1 , further comprising:
a first logic cell adjacent to the layout finishing cell region, the first logic cell including a first amount of semiconductor components provided by the plurality of first gate structures and the plurality of first active regions; and
a second logic cell adjacent to the layout finishing cell region, and the second logic cell including a second amount of semiconductor components provided by the plurality of second gate structures and the plurality of second active regions.
5 . The semiconductor device of claim 1 , further comprising:
a plurality of power rails extending in the first direction, wherein
an edge of the layout finishing cell region is parallel to the first direction and overlaps one of the plurality of power rails.
6 . The semiconductor device of claim 1 , wherein
the layout finishing cell region further comprises dummy structures, wherein
the dummy structures are on upper portions of the plurality of first active regions and the plurality of second active regions, or
the dummy structures are on the plurality of first gate structures and the plurality of second gate structures.
7 . The semiconductor device of claim 6 , wherein the dummy structures include active contacts.
8 . The semiconductor device of claim 1 , further comprising:
a plurality of polysilicon structures between the plurality of first gate structures and the KOZ or the ESD diode inside the layout finishing cell region.
9 . A semiconductor device comprising:
a substrate including a Keep-Out Zone (KOZ) and a layout finishing cell region;
a through silicon via (TSV) penetrating through the substrate, the TSV being surrounded by the KOZ;
an electrostatic discharge (ESD) diode on an upper surface of the substrate;
a driver circuit;
a plurality of gate structures on the substrate; and
metal wirings configured to electrically connect the TSV, the ESD diode, and the driver circuit, wherein
the layout finishing cell region surrounds the KOZ and the ESD diode and is around the TSV,
the driver circuit is adjacent to the layout finishing cell region and outside the layout finishing cell region,
the substrate includes a plurality of active regions extending from an end in the layout finishing cell region,
the plurality of gate structures intersect the plurality of active regions to form semiconductor components, and
the driver circuit includes at least some of the semiconductor components.
10 . The semiconductor device of claim 9 , wherein
the substrate includes a standard cell region, and
the standard cell region is adjacent to the driver circuit and includes a portion of the semiconductor components provided by the plurality of gate structures intersecting the plurality of active regions.
11 . The semiconductor device of claim 10 , wherein the driver circuit and the standard cell region are in a same power domain.
12 . The semiconductor device of claim 10 , further comprising:
a plurality of power rails extending in a direction in parallel with the plurality of active regions, wherein the at least some of the semiconductor components in the driver circuit are electrically connected to the plurality of power rails,
the standard cell region includes a logic cell including a portion of the semiconductor components, and
the portion of the semiconductor components included in the logic cell are electrically connected to the plurality of power rails.
13 . The semiconductor device of claim 10 , wherein the driver circuit and the standard cell region are in different power domains.
14 . The semiconductor device of claim 10 , further comprising:
a drain power rail and a source power rail extending in a direction in parallel with the plurality of active regions, the drain power rail and the source power rail respectively being among a plurality of drain power rails and a plurality of source power rails alternately disposed with each other; and
a first power wiring configured to supply a first drain power and a second power wiring configured to supply a second drain power, the first power wiring and the second power wiring both extending in a direction in parallel with the drain power rail and the source power rail, wherein
the at least some of the semiconductor components include first semiconductor components,
the portion of the semiconductor components includes second semiconductor components, the standard cell region includes logic cells including the second semiconductor components and the second semiconductor components are electrically connected to the first power wiring or the source power rail,
the driver circuit includes the first semiconductor components and the first semiconductor components are electrically connected to the second power wiring or the source power rail.
15 . The semiconductor device of claim 14 , wherein
the substrate includes a first N-well region extending from the standard cell region and a second N-well region extending from a region in which the driver circuit is disposed,
the plurality of active regions intersect the first N-well region and the second N-well region,
the plurality of active regions include a cut region configured to electrically separate the first semiconductor components from the second semiconductor components.
16 . The semiconductor device of claim 15 , wherein
the region in which the driver circuit is disposed includes the cut region and a region for separating the first N-well region from the second N-well region.
17 . A semiconductor device comprising:
a substrate including a plurality of I/O interface cell regions in a form of a closed loop and a standard cell region outside the plurality of I/O interface cell regions; and
a plurality of I/O interface cells on the substrate, wherein
the plurality of I/O interface cells each include a through silicon via (TSV), an electrostatic discharge (ESD) diode, a driver circuit, metal wirings, a layout finishing cell region, and a Keep-Out Zone (KOZ) around the TSV,
the metal wirings electrically connect the TSV, the ESD diode and the driver circuit,
the layout finishing cell region surrounds the ESD diode and the Keep-Out Zone (KOZ) around the TSV, and
the layout finishing cell region includes an end cap for active regions and gate structures extending from the standard cell region.
18 . The semiconductor device of claim 17 , wherein
the plurality of I/O interface cell regions include a plurality of edges in parallel with a direction in which the gate structures extend, and
lengths of the plurality of edges are an integral multiple of a unit height defined in a standard cell.
19 . The semiconductor device of claim 17 , wherein at least some of the plurality of I/O interface cell regions are adjacent to each other.
20 . The semiconductor device of claim 17 , further comprising:
in the standard cell region, a plurality of logic cells are adjacent to the plurality of I/O interface cell regions.