Solid-state image sensor and method for producing the same
A solid-state image sensor includes a substrate, photoelectric conversion elements positioned on the substrate, a filter module positioned above the photoelectric conversion elements positioned on the substrate, lenses positioned above the filter module positioned above the photoelectric conversion elements, a resin layer formed such that the resin layer is surrounding an outer edge of the filter module positioned on the substrate, and an anti-reflection film formed on the lenses and resin layer such that the anti-reflection film has a peripheral film portion covering a peripheral portion of the resin layer. The filter module is positioned such that light is transmitted through the filter module before being incident on the photoelectric conversion elements, and the anti-reflection film is formed such that the peripheral film portion has an uneven shape having unevenness in thickness direction of the resin layer and at least part of an outer edge protruding outside the resin layer.
1 . A solid-state image sensor, comprising:
a substrate;
a plurality of photoelectric conversion elements positioned on the substrate;
a filter module positioned above the photoelectric conversion elements positioned on the substrate;
a plurality of lenses positioned above the filter module positioned above the photoelectric conversion elements;
a resin layer formed such that the resin layer is surrounding an outer edge of the filter module positioned on the substrate; and
an anti-reflection film formed on the lenses and the resin layer such that the anti-reflection film has a peripheral film portion covering a peripheral portion of the resin layer and has a first portion covering the lenses,
wherein the filter module is positioned such that light is transmitted through the filter module before being incident on the photoelectric conversion elements, and the anti-reflection film is formed such that the peripheral film portion has an uneven shape having unevenness in a thickness direction of the resin layer and at least part of an outer edge protruding outside the resin layer from the first portion covering the lenses.
2 . The solid-state image sensor according to claim 1 , wherein the peripheral portion of the resin layer has an uneven surface having unevenness in the thickness direction, and the anti-reflection film is formed such that the uneven shape of the peripheral film portion conforms to the uneven surface of the peripheral portion of the resin layer.
3 . The solid-state image sensor according to claim 1 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises a plurality of upwardly projecting surface portions.
4 . The solid-state image sensor according to claim 3 , wherein each of the upwardly projecting surface portions has a shape conforming to a corresponding one of upwardly convex lens surface shapes formed in the resin layer.
5 . The solid-state image sensor according to claim 1 , further comprising:
a light-blocking layer formed between the substrate and the resin layer such that the light-blocking layer absorbs external light,
wherein the filter module includes a plurality of colored layers, and at least part of the light-blocking layer includes a material identical to a material of the colored layers.
6 . The solid-state image sensor according to claim 1 , wherein the anti-reflection film is formed such that a maximum amount of protrusion by the at least part of the outer edge of the peripheral film portion protruding outside the resin layer is in a range of 40% to 200% of a pixel size determined by a pitch at which the photoelectric conversion elements are positioned.
7 . The solid-state image sensor according to claim 1 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises projecting portions formed in rows such that at least two of the projecting portions are aligned in each row in an inward direction from the outer edge of the resin layer.
8 . The solid-state image sensor according to claim 1 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises projecting portions formed at a pitch equal to a pitch at which the lenses are positioned.
9 . The solid-state image sensor according to claim 1 , wherein the anti-reflection film has an inner film portion on the lenses, and an intermediate film portion formed between the inner film portion and the peripheral film portion such that the intermediate film portion has a flat shape.
10 . The solid-state image sensor according to claim 2 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises a plurality of upwardly projecting surface portions.
11 . The solid-state image sensor according to claim 10 , wherein each of the upwardly projecting surface portions has a shape conforming to a corresponding one of upwardly convex lens surface shapes formed in the resin layer.
12 . The solid-state image sensor according to claim 2 , further comprising:
a light-blocking layer formed between the substrate and the resin layer such that the light-blocking layer absorbs external light,
wherein the filter module includes a plurality of colored layers, and at least part of the light-blocking layer includes a material identical to a material of the colored layers.
13 . The solid-state image sensor according to claim 2 , wherein the anti-reflection film is formed such that a maximum amount of protrusion by the at least part of the outer edge of the peripheral film portion protruding outside the resin layer is in a range of 40% to 200% of a pixel size determined by a pitch at which the photoelectric conversion elements are positioned.
14 . The solid-state image sensor according to claim 2 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises projecting portions formed in rows such that at least two of the projecting portions are aligned in each row in an inward direction from the outer edge of the resin layer.
15 . The solid-state image sensor according to claim 2 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises projecting portions formed at a pitch equal to a pitch at which the lenses are positioned.
16 . The solid-state image sensor according to claim 2 , wherein the anti-reflection film has an inner film portion on the lenses, and an intermediate film portion formed between the inner film portion and the peripheral film portion such that the intermediate film portion has a flat shape.
17 . The solid-state image sensor according to claim 3 , further comprising:
a light-blocking layer formed between the substrate and the resin layer such that the light-blocking layer absorbs external light,
wherein the filter module includes a plurality of colored layers, and at least part of the light-blocking layer includes a material identical to a material of the colored layers.
18 . The solid-state image sensor according to claim 3 , wherein the anti-reflection film is formed such that a maximum amount of protrusion by the at least part of the outer edge of the peripheral film portion protruding outside the resin layer is in a range of 40% to 200% of a pixel size determined by a pitch at which the photoelectric conversion elements are positioned.
19 . The solid-state image sensor according to claim 3 , wherein the anti-reflection film is formed such that the uneven shape of the peripheral film portion comprises projecting portions formed in rows such that at least two of the projecting portions are aligned in each row in an inward direction from the outer edge of the resin layer.