Image sensing device
An image sensing device includes a lens module to converge incident light from a scene; and a pixel array located relative to the lens module to receive the converged incident light from the lens module and structured to include a plurality of pixels, each of which is structured to detect the converged incident light carrying image information of the scene, wherein the plurality of pixels in the pixel array includes a first pixel in an edge region of the pixel array, the edge region being spaced apart from an optical axis of the lens module by a predetermined distance, and wherein the first pixel includes: a semiconductor region including a photoelectric conversion element configured to generate photocharge corresponding to an intensity of the incident light detected at the first pixel; a microlens disposed over the semiconductor region; and a reflective structure disposed to cover a portion of the first pixel.
1 . An image sensing device comprising:
a lens module structured to converge incident light from a scene; and
a pixel array located relative to the lens module to receive the converged incident light from the lens module and structured to include a plurality of pixels, each of which is structured to detect the converged incident light carrying image information of the scene,
wherein the plurality of pixels in the pixel array includes a first pixel in an edge region of the pixel array, the edge region being spaced apart from an optical axis of the lens module by a predetermined distance,
wherein the first pixel includes:
a semiconductor region including a photoelectric conversion element configured to generate photocharge corresponding to an intensity of the incident light detected at the first pixel;
a microlens disposed over the semiconductor region; and
a reflective structure disposed to cover a portion of the first pixel, and
wherein: the microlens includes a first microlens overlapping a first reflective structure and a second microlens overlapping a second reflective structure, the first microlens being disposed closer to an edge of the pixel array than the second microlens, the first reflective structure having a greater length than a length of the second reflective structure.
2 . The image sensing device according to claim 1 , wherein:
the microlens is disposed such that an optical axis of the microlens is shifted from a center of the semiconductor region toward the optical axis of the lens module.
3 . The image sensing device according to claim 1 , wherein:
the reflective structure is structured to reflect light rays reflected from a top surface of the semiconductor region toward the semiconductor region.
4 . The image sensing device according to claim 1 , wherein:
the reflective structure is structured to reflect light rays incident upon a top surface of the reflective structure to outside of the first pixel.
5 . The image sensing device according to claim 1 , wherein:
the reflective structure is disposed at a position where a chief ray for the first pixel that is incident upon the microlens is refracted toward another pixel adjacent to the first pixel.
6 . The image sensing device according to claim 1 , wherein:
the reflective structure is shifted from a center of the microlens in a direction away from the optical axis of the lens module and closer to an edge of the pixel array.
7 . The image sensing device according to claim 1 , wherein:
the reflective structure is formed to have a bow shape.
8 . The image sensing device according to claim 7 , wherein:
a curved portion of the reflective structure is perpendicular to a straight line connecting the optical axis of the lens module to a center axis of the microlens.
9 . The image sensing device according to claim 1 , wherein the first pixel further includes:
an optical filter disposed between the microlens and the semiconductor region.
10 . The image sensing device according to claim 9 , wherein:
a refractive index of the microlens is smaller than a refractive index of the optical filter; and
a refractive index of the optical filter is smaller than a refractive index of the semiconductor region.
11 . The image sensing device according to claim 1 , wherein:
the reflective structure includes at least one of silver (Ag) and aluminum (Al).
12 . An image sensing device comprising:
a lens module structured to converge incident light from a scene; and
a pixel array located relative to the lens module to receive the converged incident light from the lens module and structured to include a plurality of pixels, each of which is structured to detect the converged incident light carrying image information of the scene,
wherein the plurality of pixels in the pixel array includes a first pixel in an edge region of the pixel array, the edge region being spaced apart from an optical axis of the lens module by a predetermined distance,
wherein the first pixel includes:
a semiconductor region including a photoelectric conversion element configured to generate photocharge corresponding to an intensity of the incident light detected at the first pixel;
a microlens disposed over the semiconductor region; and
a reflective structure disposed to cover a portion of the first pixel, and
wherein:
the first pixel includes a pixel with a first color filter and another pixel that is adjacent to the pixel with the first color filter and includes a second color filter different from the first color filter, wherein the pixel with the first color filter is disposed at a position relatively farther from the optical axis of the lens module than the pixel with the second color filter, and
wherein the pixel with the first color filter includes a reflective structure, and the pixel with the second color filter does not include a reflective structure.
13 . The image sensing device according to claim 12 , wherein:
the pixel including the reflective structure and the pixel not including the reflective structure are alternately disposed in a direction of a chief ray incident upon the edge region.
14 . An image sensing device comprising:
a semiconductor region including a photoelectric conversion element structured to generate photocharges corresponding to an intensity of incident light;
a microlens disposed over the semiconductor region to direct incident light to the semiconductor region; and
a reflective structure disposed to cover a first portion of the microlens,
wherein a second portion of the microlens, symmetrically opposite the first portion relative to a center of the microlens, is not covered by the reflective structure.
15 . The image sensing device according to claim 14 , wherein:
the microlens is disposed such that an optical axis of the microlens is shifted from a center of the semiconductor region toward an optical axis of a lens module.
16 . The image sensing device according to claim 15 , wherein:
the reflective structure is shifted from the center of the microlens in a direction away from the optical axis of the lens module and closer to an edge of a pixel array.
17 . The image sensing device according to claim 14 , wherein:
the reflective structure is structured to reflect light rays reflected from a top surface of the semiconductor region toward the semiconductor region.
18 . The image sensing device according to claim 14 , wherein:
the reflective structure is structured to reflect light rays incident upon a top surface of the reflective structure to outside of the semiconductor region.
19 . The image sensing device according to claim 14 , wherein the first portion of the microlens covered by the reflective structure includes a surface area of the microlens between an edge and the center of the microlens.