Image sensor
An image sensor includes a first substrate including pixel regions, each of the pixel regions including a photoelectric conversion region, color filters on the pixel regions, the color filters on a first surface of the first substrate, micro lenses on the color filters, and a lens coating layer on the micro lenses. The lens coating layer includes a first coating layer and a second coating layer, the second coating layer is on the first coating layer, the first and second coating layers include a same material, and a density of the second coating layer is greater than a density of the first coating layer.
1 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a first photoelectric conversion region in the substrate;
a second photoelectric conversion region in the substrate;
an isolation pattern between the first photoelectric conversion region and the second photoelectric conversion region; and
a fence pattern on the isolation pattern and vertically overlapping with the isolation pattern,
wherein the fence pattern comprises:
a first fence pattern on the first surface;
a second fence pattern on the first fence pattern;
a first protective layer on the second fence pattern; and
a second protective layer on the first protective layer,
wherein the first protective layer covers a left-side, a top surface, and a right-side of the second fence pattern in a vertical view,
wherein the second protective layer covers the left-side, the top surface, and the right-side of the second fence pattern in the vertical view,
wherein the first protective layer comprises a metal material, and
wherein the second protective layer comprises a silicon material.
2 . The image sensor of claim 1 , wherein the first protective layer has a first height on the top surface of the second fence pattern in a first direction perpendicular to the first surface,
wherein the second protective layer has a second height on a top surface of the first protective layer in the first direction,
wherein the top surface of the first protective layer covers the top surface of the second fence pattern, and
wherein the first height is different from the second height.
3 . The image sensor of claim 2 , wherein the first and second protective layers comprise oxide material.
4 . The image sensor of claim 2 , wherein the second protective layer comprises silicon oxide.
5 . The image sensor of claim 2 , wherein the first protective layer comprises aluminum oxide.
6 . The image sensor of claim 4 , wherein the first protective layer comprises oxide.
7 . The image sensor of claim 5 , further comprising a color filter,
wherein at least a portion of the color filter covers a top surface of the second protective layer, and
wherein the top surface of the second protective layer covers the top surface of the first protective layer.
8 . The image sensor of claim 6 , wherein a bottom surface of the second fence pattern has a first width in a second direction perpendicular to the first direction,
wherein the top surface of the second fence pattern has a second width in the second direction perpendicular to the first direction,
wherein the first width is different from the second width, and
wherein the bottom surface of the second fence pattern is opposing the top surface of the second fence pattern in the vertical view.
9 . The image sensor of claim 8 , wherein the first width is greater than the second width.
10 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a first photoelectric conversion region in the substrate;
a second photoelectric conversion region in the substrate;
a first micro lens disposed vertically overlapping with the first photoelectric conversion region in the substrate;
a second micro lens disposed vertically overlapping with the second photoelectric conversion region in the substrate
an isolation pattern between the first photoelectric conversion region and the second photoelectric conversion region; and
a fence pattern on the isolation pattern and vertically overlapping with the isolation pattern,
wherein the fence pattern comprises:
a first fence pattern on the first surface;
a second fence pattern on the first fence pattern;
a first protective layer on the second fence pattern; and
a second protective layer on the first protective layer,
wherein the first protective layer covers a left-side, a top surface, and a right-side of the second fence pattern in a vertical view,
wherein the second protective layer covers the left-side, the top surface, and the right-side of the second fence pattern in the vertical view,
wherein the first protective layer comprises a first material,
wherein the second protective layer comprises a second material different from the first material, and
wherein a height from the first surface to an uppermost portion of the first micro lens in a first direction perpendicular to the first surface is different from a height from the first surface to an uppermost portion of the second micro lens in the first direction.
11 . The image sensor of claim 10 , wherein the first protective layer has a first height on the top surface of the second fence pattern in the first direction,
wherein the second protective layer has a second height on a top surface of the first protective layer in the first direction,
wherein the top surface of the first protective layer covers the top surface of the second fence pattern, and
wherein the first height is different from the second height.
12 . The image sensor of claim 11 , wherein the first and second protective layers comprise oxide material.
13 . The image sensor of claim 12 , wherein the second protective layer comprises silicon oxide.
14 . The image sensor of claim 12 , wherein the first protective layer comprises aluminum oxide.
15 . An image sensor comprising:
a substrate comprising a first surface and a second surface opposing the first surface;
a first photoelectric conversion region in the substrate;
a second photoelectric conversion region in the substrate;
an isolation pattern between the first photoelectric conversion region and the second photoelectric conversion region; and
a fence pattern on the isolation pattern and vertically overlapping with the isolation pattern,
wherein the fence pattern comprises:
a first fence pattern on the first surface;
a second fence pattern on the first fence pattern;
a first protective layer on the second fence pattern; and
a second protective layer on the first protective layer,
wherein the first protective layer covers a left-side, a top surface, and a right-side of the second fence pattern in a vertical view,
wherein the second protective layer covers the left-side, the top surface, and the right-side of the second fence pattern in the vertical view, and
wherein the first protective layer comprises a metal material.
16 . The image sensor of claim 15 , wherein the first and second protective layers comprise oxide.
17 . The image sensor of claim 15 , wherein the first protective layer has a first height on the top surface of the second fence pattern in first direction perpendicular to the first surface,
wherein the second protective layer has a second height on a top surface of the first protective layer in the first direction,
wherein the top surface of the first protective layer covers the top surface of the second fence pattern, and
wherein the first height is different from the second height.
18 . The image sensor of claim 15 , wherein the first protective layer comprises aluminum oxide.
19 . The image sensor of claim 13 , wherein the first protective layer comprises aluminum oxide.
20 . The image sensor of claim 14 , wherein the first protective layer comprises aluminum oxide.