Solid-state imaging device to reduce stray capacitance
A solid-state imaging device includes: a substrate including a first surface and a second surface that is opposed to the first surface; a first through-wiring that penetrates from the first surface of the substrate to the second surface of the substrate and through which electric charge is to be transferred; an electroconductive body formed in the substrate and along a periphery of a side surface of the first through-wiring with a dielectric body being interposed between the electroconductive body and the side surface; and a voltage supply circuit that supplies the electroconductive body with a voltage that causes a voltage difference between the first through-wiring and the electroconductive body to be small, when the electric charge is to be transferred to the first through-wiring.
1 . A solid-state imaging device, comprising:
a substrate including a first surface and a second surface that is opposite to the first surface;
a first through-wiring that penetrates from the first surface of the substrate to the second surface of the substrate, wherein the first through-wiring is configured to transfer an electric charge;
an electroconductive body in the substrate, wherein the electroconductive body is along a periphery of a side surface of the first through-wiring;
a dielectric body between the electroconductive body and the side surface of the first through-wiring; and
a voltage supply circuit configured to supply a first voltage to the electroconductive body, wherein the first voltage causes a voltage difference between the first through-wiring and the electroconductive body to be small, at a time of the transfer of the electric charge to the first through-wiring.
2 . The solid-state imaging device according to claim 1 , further comprising:
a first photoelectric converter on the first surface of the substrate, wherein the first photoelectric converter is configured to convert light into the electric charge; and
a pixel circuit on the second surface of the substrate, wherein
the pixel circuit includes a floating diffusion and an amplifier transistor,
the amplifier transistor includes a control electrode that is electrically coupled to the floating diffusion, and
the first through-wiring is configured to transfer, to the control electrode, the electric charge converted from the light in the first photoelectric converter.
3 . The solid-state imaging device according to claim 2 , wherein
the amplifier transistor includes a pair of main electrodes, and
one of the pair of the main electrodes is electrically coupled to the electroconductive body to constitute the voltage supply circuit.
4 . The solid-state imaging device according to claim 3 , wherein the one of the pair of the main electrodes is electrically coupled, at the second surface of the substrate, to the electroconductive body.
5 . The solid-state imaging device according to claim 3 , further comprising a second through-wiring that penetrates through from the first surface of the substrate to the second surface of the substrate at a position spaced apart from the first through-wiring, wherein
the second through-wiring is electrically coupled, at the first surface of the substrate, to the electroconductive body, and
the second through-wiring is electrically coupled, at the second surface of the substrate, to the one of the pair of the main electrodes.
6 . The solid-state imaging device according to claim 5 , wherein
the second through-wiring includes an electrically conductive material same as an electrically conductive material of the first through-wiring, and
the second through-wiring has a cross-sectional structure same as a cross-sectional structure of the first through-wiring.
7 . The solid-state imaging device according to claim 1 , wherein
the first voltage causes the voltage difference between the first through-wiring and the electroconductive body to be kept constant, and
the first voltage is in phase with a second voltage based on the electric charge to be transferred to the first through-wiring.
8 . The solid-state imaging device according to claim 1 , further comprising:
a second photoelectric converter within the substrate, wherein
the second photoelectric converter is at a position adjacent to the first through-wiring, and
the second photoelectric converter is configured to convert light into the electric charge; and
a light shielding wall that extends from the electroconductive body, wherein
the light shielding wall surrounds at least a portion of a periphery of a side surface of the second photoelectric converter, and
the light shielding wall has a higher light shielding property than the substrate.
9 . The solid-state imaging device according to claim 1 , wherein the first through-wiring includes a metal material that includes at least one of Si, Al, W, Ti, Co, Pt, Pd, Cu, Hf, or Ta.
10 . The solid-state imaging device according to claim 1 , wherein
the electroconductive body includes one of a metal material, a metallic compound material, or a semiconductor region, and
the electroconductive body includes at least one of Al, Cu, Co, W, Ti, Ta, Ni, Mo, Cr, Ir, PtIr, TiN, or WSi.
11 . A solid-state imaging device, comprising:
a substrate including a first surface and a second surface that is opposite to the first surface;
a first photoelectric converter on the first surface of the substrate, wherein the first photoelectric converter is configured to convert light into an electric charge;
a first through-wiring that penetrates from the first surface of the substrate to the second surface of the substrate, wherein the first through-wiring is configured to transfer the electric charge from the first photoelectric converter;
an electroconductive body in the substrate, wherein the electroconductive body is along a periphery of a side surface of the first through-wiring;
a dielectric body between the electroconductive body and the side surface of the first through-wiring;
a voltage supply circuit configured to supply first voltage to the electroconductive body, wherein
the first voltage causes a voltage difference between the first through-wiring and the electroconductive body to be kept constant, and
the first voltage is in phase with a second voltage based on the electric charge to be transferred to the first through-wiring;
a second photoelectric converter in the substrate, wherein
the second photoelectric converter is at a position adjacent to the first through-wiring, and
the second photoelectric converter is configured to convert the light into the electric charge; and
a light shielding wall that extends from the electroconductive body, wherein
the light shielding wall surrounds at least a portion of a periphery of a side surface of the second photoelectric converter, and
the light shielding wall has a higher light shielding property than the substrate.
12 . The solid-state imaging device according to claim 11 , further comprising:
a pixel circuit on the second surface of the substrate, wherein
the pixel circuit includes a floating diffusion and an amplifier transistor,
the amplifier transistor includes a control electrode that is electrically coupled to the floating diffusion,
the amplifier transistor includes a pair of main electrodes, and
one of the pair of the main electrodes of the amplifier transistor is electrically coupled to the electroconductive body to constitute the voltage supply circuit.