Solar cell and preparation method therefor
In one aspect, a method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including first and second doped regions, and a P-type doping concentration of the first doped region being greater than that of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The disclosed method can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current such that the solar cell has higher conversion efficiency.
1 . A method for preparing a solar cell, comprising:
forming a selective emitter on a front side of the solar cell, wherein the selective emitter comprises a first doped region and a second doped region, and a P-type doping concentration of the first doped region is greater than a P-type doping concentration of the second doped region; and
bringing a positive electrode of the solar cell to be in electrical contact with the first doped region,
wherein a step of forming the selective emitter on the front side of the solar cell comprises:
providing an N-type silicon wafer having a P-N junction;
printing a boron slurry on an entire front side of the silicon wafer, selecting a part of the entire front side of the silicon wafer as a preset area of the front side of the silicon wafer; and
pushing the boron slurry from the preset area of the front side of the silicon wafer to a P-type doping area of the front side of the silicon wafer to form the first doped region, and taking a remaining part of the P-type doping area as the second doped region.
2 . The method of claim 1 , wherein the preset area on the front side of the silicon wafer is configured for forming the positive electrode.
3 . The method of claim 1 , wherein a mass concentration of the boron slurry is in a range of 2.5% to 7%.
4 . The method of claim 1 , wherein a step of forming the selective emitter on the front side of the solar cell further comprises:
before printing the boron slurry on the front side of the silicon wafer, removing a boron-silicon glass on the front side of the silicon wafer.
5 . The method of claim 4 , wherein a step of forming the first doped region further comprises pushing the boron slurry by a laser,
wherein, a laser power is in a range of 20 W to 40 W, a percentage of an output power of laser is in a range of 70% to 90%, a laser scanning speed is in a range of 20 m/s to 30 m/s, and the number of a laser scanning times is in a range of 2 to 4.
6 . The method of claim 5 , wherein the step of forming the first doped region further comprises pushing the boron slurry by the laser, which is emitted by a nanosecond laser device.
7 . The method of claim 4 , wherein the step of forming the selective emitter on the front side of the solar cell further comprises: forming another boron-silicon glass on the front side of the silicon wafer again after forming the first doped region; and
wherein, a process of forming the another boron-silicon glass comprises: first depositing a silicon oxide layer with a thickness in a range of 50 nm to 100 nm, and then heating for 30 min to 60 min at a temperature of 900° C. to 1300° C.
8 . The method of claim 1 , wherein after a step of forming the selective emitter on the front side of the solar cell, the method further comprises the following steps in sequence:
removing a boron-silicon glass on the back side of the silicon wafer, the P-N junction on a back side and an edge of the silicon wafer, and remaining boron slurry on the front side of the silicon wafer;
disposing a doped oxide layer and an amorphous silicon passivation film on the back side of the silicon wafer;
annealing to make a crystal structure of the amorphous silicon passivation film change to form a polycrystalline silicon thin film;
removing an oxide layer on the front side of the silicon wafer formed in a process of disposing the doped oxide layer and an oxide layer formed in a process of annealing, and removing amorphous silicon on the front side of the silicon wafer formed in a process of disposing the amorphous silicon passivation film;
forming a front passivation film and a front reflection reducing film on the front side of the silicon wafer, and forming a back hydrogen passivation film on the back side of the silicon wafer; and
forming electrodes.
9 . The method of claim 1 , wherein the first doped region is a heavy doped region, and the second doped region is a light doped region.
10 . The method of claim 1 , further comprising a step of preparing a functional structure, wherein the functional structure is at least one of an anti-reflection textured structure, a P-N junction, a tunneling oxide layer, a polycrystalline silicon film, a front anti-reflection film, or a back hydrogen passivation film.