Enhanced light extraction from light emitting diodes utilizing a nanoparticle meta-grid
Light extraction efficiency of existing semiconductor light emitting devices can be increased significantly by introducing a nanoparticle ‘meta-grid’ on top of a conventional light emitting diode (LED) chip, within its usual encapsulating packaging or casing. The ‘meta-grid’ is essentially a monolayer or a 2D array of sub-wavelength metallic nanoparticles (NPs) with sub-wavelength inter-particle separation. The local dielectric environment around the NPs and within the gaps between the NPs could be the same as the encapsulant, or any other optically transparent material with refractive index close to that of the encapsulant. Upon optical excitation, the collective oscillations of conduction electrons, or surface plasmon, of the metallic NPs give rise to localized surface plasmon resonances. When placed on top of the LED chip, which acts as a high refractive index substrate for the NPs, these NPs can couple strongly to the light emitted by the chip, acting as efficient resonant plasmonic antennae or scatterers for light. The plasmon-mediated light coupling can by optimized by tuning the composition, size, and shape of the NPs, their inter-particle gaps and their distance from the LED chip surface. By virtue of the localized-surface-plasmon-enhanced light transmission through the optimized NP ‘meta-grid’, the efficiency of extraction of the light generated by the semiconductor LED chip into its encapsulating casing can be significantly improved.
1 . A light emitting diode (LED) device comprising:
an LED chip having a light-emitting p-n junction therein, for emitting light with peak intensity at a given wavelength; and
an encapsulating casing adjacent to the LED chip;
wherein the LED device further comprises a two-dimensional meta-grid array of plasmonic metallic nanoparticles on top of the LED chip, within the casing, wherein the metallic nanoparticles are less than said wavelength in diameter and have an inter-particle separation that is less than said wavelength;
wherein the metallic nanoparticles are arranged to couple to light emitted from the LED chip in use, and to act as resonant plasmonic antennae or scatterers for the emitted light,
wherein the metallic nanoparticles have a radius in the range of 5 nm to 50 nm; and
wherein adjacent metallic nanoparticles are spaced by an inter-particle gap, wherein the inter-particle gap is in the range of 2 nm to 150 nm.
2 . The LED device according to claim 1 , wherein the metallic nanoparticles comprise silver, gold, aluminium or copper.
3 . The LED device according to claim 1 , wherein the radius of the metallic nanoparticles is in the range of 5 nm to 40 nm.
4 . The LED device according to claim 1 , wherein the inter-particle gap is in the range of 5 nm to 80 nm.
5 . The LED device according to claim 1 , wherein the array of metallic nanoparticles is disposed at a height above a surface of the LED chip, within the casing, wherein the height is in the range of 5 nm to 50 nm.
6 . The LED device according to claim 1 , wherein the metallic nanoparticles in the array are each coated or functionalized with ligands to cause the nanoparticles to adopt an inter-particle gap spacing when the array is formed.
7 . The LED device according to claim 1 , wherein a dielectric material is disposed around and between the nanoparticles, optionally wherein the dielectric material is the same as the material from which the casing is formed.
8 . The LED device according to claim 1 , wherein the metallic nanoparticles in the array are each coated with a dielectric shell, thereby forming an array of coated nanoparticles, each coated nanoparticle comprising a core nanoparticle with a respective shell layer.
9 . The LED device according to claim 8 , wherein the coated nanoparticles are close-packed in the array.
10 . The LED device according to claim 8 , wherein the dielectric shell is formed of silica.
11 . The LED device according to claim 8 , wherein the core nanoparticles have a radius in the range of 5 nm to 30 nm, optionally wherein the radius is in the range of 5 nm to 25 nm, for example in the range of 10 nm to 20 nm.
12 . The LED device according to claim 8 , wherein the shell layer has a thickness in the range of 1 nm to 30 nm, optionally wherein the thickness is in the range of 2 nm to 25 nm, for example in the range of 4 nm to 15 nm.
13 . The LED device according to claim 8 , wherein the array of coated nanoparticles is disposed at a height above a surface of the LED chip, within the casing, wherein the height is in the range of 0 nm to 500 nm, optionally wherein the height is in the range of 5 nm to 50 nm, for example in the range of 20 nm to 40 nm.
14 . The LED device according to claim 3 , wherein the radius of the metallic nanoparticles is in the range of 10 nm to 20 nm.
15 . The LED device according to claim 4 , wherein the inter-particle gap is in the range of 10 nm to 40 nm.
16 . The LED device according to claim 5 , wherein the height is in the range of 20 nm to 40 nm.