Display device comprising semiconductor light emitting device in opening hole of planarization layer

1 . A display device comprising a semiconductor light emitting device, the display device comprising:

a substrate;

first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other;

a planarization layer disposed on the first assembly wiring and the second assembly wiring, having an opening hole and a contact hole;

a light emitting device disposed within the opening hole of the planarization layer, and having a first electrode overlapping the first assembly wiring and the second assembly wiring;

a first light absorption layer disposed to surround an area where the light emitting device is disposed and having light absorbing characteristics;

a transistor disposed below the first assembly wiring and the second assembly wiring;

a connection electrode disposed below the planarization layer and disposed on a top of the transistor and electrically connected to the transistor; and

a pixel electrode electrically connecting the connection electrode and the light emitting device through the contact hole in the planarization layer.

2 . The display device according to claim 1 , wherein the first light absorption layer is disposed between the planarization layer and the first, second assembly wirings, and comprises an opening area overlapping the opening hole and the contact hole of the planarization layer.

3 . The display device according to claim 2 , wherein the planarization layer is disposed to surround a top surface and a side surface of the first light absorption layer.

4 . The display device according to claim 3 , wherein the planarization layer comprises:

a first planarization layer surrounding the top and side surfaces of the first light absorption layer; and

a second planarization layer surrounding a top and side surfaces of the first planarization layer and covering a portion of a top surface of the light emitting device.

5 . The display device according to claim 2 , further comprising a transparent electrode disposed on the connection electrode to electrically connect the connection electrode and the pixel electrode, the transparent electrode being made of a transparent conductive material,

wherein the first light absorption layer includes a contact area that overlaps the contact hole of the planarization layer, and

wherein the contact hole of the planarization layer and the contact aera-area of the first light absorption layer expose the transparent electrode disposed on the connection electrode.

6 . The display device according to claim 5 , wherein the transparent electrode extends from a top of the connection electrode to an outside of the connection electrode,

wherein the contact hole of the planarization layer and the contact area of the first light absorption layer are disposed on an extended portion of the transparent electrode.

7 . The display device according to claim 2 , further comprising at least one of a second light absorption layer disposed on the pixel electrode and a third light absorption layer disposed below the first assembly wiring and the second assembly wiring.

8 . The display device according to claim 7 , wherein the substrate includes a display area and a non-display area,

wherein the third light absorption layer is disposed at least over the entire display area.

9 . The display device according to claim 1 , wherein the first light absorption layer is disposed on the planarization layer and has an opening area that overlaps an opening hole of the planarization layer.

10 . The display device according to claim 9 , further comprising a reflector disposed to surround the light emitting device,

wherein the planarization layer comprises a first planarization layer disposed on the first assembly wiring and the second assembly wiring; and a second planarization layer disposed on the first planarization layer, and

wherein the reflector is disposed on a side of the first planarization layer.

11 . The display device according to claim 1 , further comprising a third reflector between the second assembly wiring and the light emitting device.

12 . The display device according to claim 1 , wherein the second assembly wiring is arranged on a different plane from the first assembly wiring.

13 . A display device comprising a semiconductor light emitting device, the display device comprising:

a substrate;

first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other;

a planarization layer disposed on the first assembly wiring and the second assembly wiring, and having an opening hole and a contact hole;

a light emitting device disposed within the opening hole of the planarization layer, and having a first electrode overlapping the first assembly wiring and the second assembly wiring; and

a first light absorbing layer disposed to surround an area where the light emitting device is disposed and having light absorbing characteristics,

wherein the first assembly wiring vertically overlaps the second assembly wiring, and

wherein the second assembly wiring includes an electrode hole in a region that vertically overlaps the first assembly wiring.

14 . A display device comprising a semiconductor light emitting device, the display device comprising:

assembly wiring arranged on a substrate;

a light emitting device disposed on the assembly wiring;

a planarization layer disposed on the assembly wiring and disposed to surround the light emitting device;

a light absorption layer disposed to surround the light emitting device and having light absorbing characteristics,

wherein the light absorption layer is disposed between the assembly wiring and the planarization layer, and

wherein the planarization layer comprises:

a first planarization layer disposed to surround side and top surfaces of the light absorption layer, and

a second planarization layer disposed to surround side and top surfaces of the first planarization layer; and

a first opening hole, which is an area formed by overlapping opening areas of each of the light absorption layer and the first planarization layer to overlap the assembly wiring,

wherein the light emitting device is disposed in the first opening hole.

15 . The display device according to claim 14 , further comprising:

a transistor disposed below the assembly wiring;

a connection electrode disposed between the transistor and the planarization layer and electrically connected to the transistor;

a pixel electrode disposed on the connection electrode and the light emitting device, and electrically connected to the connection electrode and the light emitting device; and

a second opening hole disposed to penetrate the light absorption layer and the first planarization layer, and electrically connecting the connection electrode and the pixel electrode.

16 . The display device according to claim 14 ,

further comprising a reflector disposed on a side of the light absorbing-absorption layer and reflecting light emitted from the light emitting device.

17 . The display device according to claim 16 , wherein the assembly wiring includes a conductive layer, and a clad layer disposed in contact with the conductive layer at a layer different from the conductive layer and extending to an area outside the conductive layer, and

wherein the light emitting device is disposed to overlap an extended area of the clad layer.

18 . The display device according to claim 17 ,

wherein the assembly wiring comprises a first assembly wiring and a second assembly wiring disposed above the first assembly wiring,

further comprising:

a first jumping wire disposed on a different layer from the second assembly wiring and electrically connected to the second assembly wiring; and

a second jumping wire disposed below the light emitting device and electrically connected to the light emitting device,

wherein the second assembly wiring is electrically connected to the light emitting device by the first jumping wiring and the second jumping wiring.