Electronic device and manufacturing method thereof
An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, a first metal layer, a first insulating layer, a second metal layer, and a second insulating layer. The first metal layer is disposed on the substrate and configured to transmit a ground signal. The first insulating layer is disposed on the first metal layer and includes at least one first opening. The second metal layer is disposed on the first insulating layer and electrically connected to the first metal layer through the at least one first opening. The second insulating layer is disposed on the second metal layer and includes at least one second opening. In the top view direction, the at least one first opening is separated from the at least one second opening. The electronic device in the embodiments of the disclosure and the manufacturing method thereof may improve the process yield.
1 . An electronic device, comprising:
a substrate;
a first metal layer, disposed on the substrate and configured to transmit a ground signal;
a first insulating layer, disposed on the first metal layer and comprising at least one first opening;
a second metal layer, disposed on the first insulating layer and a first portion of the second metal layer electrically connected to the first metal layer through the at least one first opening;
a second insulating layer, disposed on the second metal layer and comprising at least one second opening;
a third metal layer, disposed in the at least one second opening and electrically connected to the second metal layer; and
an electronic element, disposed on the second insulating layer and electrically connected to the second metal layer through the third metal layer and the at least one second opening,
wherein in a top view direction, the at least one first opening is separated from the at least one second opening, the at least one first opening is disposed in a periphery of the electronic element, and the electronic element does not overlap with the at least one first opening.
2 . The electronic device according to claim 1 , wherein a distance between the second insulating layer and the first metal layer is greater than 0.5 micrometer.
3 . The electronic device according to claim 2 , wherein the distance is greater than a thickness of the second insulating layer.
4 . The electronic device according to claim 1 , wherein the at least one first opening is adjacent to an edge of the first metal layer in the top view direction.
5 . The electronic device according to claim 1 , wherein in the top view direction, the at least one first opening is at least one of a circular shape, a strip, an inverted U-shape and an annular shape.
6 . The electronic device according to claim 1 , wherein the at least one first opening is a plurality of first openings.
7 . The electronic device according to claim 1 , wherein the third metal layer is separated from the first metal layer.
8 . The electronic device according to claim 1 , wherein the third metal layer is separated from the at least one first opening.
9 . The electronic device according to claim 1 , wherein the substrate comprises a clear zone, and the clear zone corresponds to the electronic element.
10 . The electronic device according to claim 1 , further comprising:
a fourth metal layer, disposed on the first metal layer and electrically connected to a second portion of the second metal layer to transmit a first signal.
11 . The electronic device according to claim 10 , wherein the first portion of the second metal layer and the second portion of the second metal layer are separated from each other.
12 . The electronic device according to claim 10 , wherein the fourth metal layer is disposed between the second metal layer and the first metal layer, and the fourth metal layer is electrically connected to the second portion of the second metal layer.
13 . The electronic device according to claim 10 , wherein the fourth metal layer is disposed on the second metal layer, and the fourth metal layer is electrically connected to the second portion of the second metal layer.
14 . A manufacturing method of an electronic device, comprising
providing a substrate;
forming a first metal layer on the substrate to transmit a ground signal;
forming a first insulating layer on the first metal layer;
patterning the first insulating layer to form at least one first opening;
forming a second metal layer on the first insulating layer, wherein a first portion of the second metal layer is electrically connected to the first metal layer through the at least one first opening;
forming a second insulating layer on the second metal layer;
patterning the second insulating layer to form at least one second opening;
forming a third metal layer in the at least one second opening, so that the third metal layer is electrically connected to the second metal layer; and
disposing an electronic element on the second insulating layer, so that the electronic element is electrically connected to the second metal layer through the third metal layer and the at least one second opening,
wherein in a top view direction, the at least one first opening is separated from the at least one second opening, the at least one first opening is disposed in a periphery of the electronic element, and the electronic element does not overlap with the at least one first opening.
15 . The manufacturing method according to claim 14 , further comprising:
forming a fourth metal layer on the first metal layer, so that the fourth metal layer is electrically connected to a second portion of the second metal layer.