Light emitting device
A method of mounting light emitting devices on a mounting board including steps of forming the light emitting devices spaced apart from one another on a first surface of a substrate, forming a mask pattern on a second surface of the substrate opposite to the first surface, the mask pattern exposing regions of the second surface of the substrate that overlap the light emitting devices to be separated from the substrate, and performing a selective laser lift-off process using the mask pattern to mount the light emitting devices to the mounting board.
1 . A light emitting device comprising:
a first light emitter including a first-type semiconductor layer, a first active layer, and a second-type semiconductor layer;
a second light emitter disposed near the first light emitter, and including a first-type semiconductor layer, a second active layer, and a second-type semiconductor layer;
a third light emitter disposed near the second light emitter, and including a first-type semiconductor layer, a third active layer, and a second-type semiconductor layer;
a first pad electrically coupled with the second-type semiconductor layer of the first light emitter;
a second pad electrically coupled with the second-type semiconductor layer of the second light emitter;
a third pad electrically coupled with the second-type semiconductor layer of the third light emitter; and
a common pad configured to supply current to the first-type semiconductor layer of the first, second, and third light emitters,
wherein, in a same current per light emitter, each of the first, second, and third light emitters is respectively configured to emit light having a peak wavelength, and
wherein one of the first, second, and third light emitters has a larger external quantum efficiency than an external quantum efficiency of another one of the first, second, and third light emitter.
2 . The light emitting device of claim 1 , wherein:
the first light emitter is covered by a first layer, the second light emitter is covered by a second layer, and the third light emitter is covered by a third layer, and
the first layer, the second layer, and the third layer are light transmittable.
3 . The light emitting device of claim 2 , wherein:
the first layer includes a first opening disposed on the first-type semiconductor layer of the first light emitter, and the second layer includes a second opening disposed on the first- type semiconductor layer of the second light emitter, the second opening having a width different from a width of the first opening.
4 . The light emitting device of claim 2 , wherein:
the second light emitter includes a reflector under the first-type semiconductor layer of the second light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
5 . The light emitting device of claim 4 , wherein:
the third light emitter includes a reflector under the first-type semiconductor layer of the third light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
6 . The light emitting device of claim 1 , wherein, in a current density per light emitter, a maximum external quantum efficiency of each of the first, second, and third light emitters is different from the maximum external quantum efficiency of each other light emitter.
7 . The light emitting device of claim 1 , wherein:
the peak wavelength of the first light emitter is greater than the peak wavelength of the second light emitter, and the peak wavelength of the second light emitter is greater than the peak wavelength of the third light emitter.
8 . A light emitting device comprising:
a first light emitter including a first-type semiconductor layer, a first active layer, and a second-type semiconductor layer;
a second light emitter disposed near the first light emitter, and including a first-type semiconductor layer, a second active layer, and a second-type semiconductor layer;
a third light emitter disposed near the second light emitter, and including a first-type semiconductor layer, a third active layer, and a second-type semiconductor layer;
a first pad electrically coupled with the second-type semiconductor layer of the first light emitter;
a second pad electrically coupled with the second-type semiconductor layer of the second light emitter;
a third pad electrically coupled with the second-type semiconductor layer of the third light emitter; and
a common pad electrically coupled with the first-type semiconductor layer of the first light emitter,
wherein, in a same current per light emitter, each of the first, second, and third light emitters is respectively configured to emit light having a peak wavelength, and
wherein one of the first, second, and third light emitters has a larger external quantum efficiency than an external quantum efficiency of another one of the first, second, and third light emitters.
9 . The light emitting device of claim 8 , wherein:
the first light emitter is covered by a first layer, the second light emitter is covered by a second layer, and the third light emitter is covered by a third layer, and
the first layer, the second layer, and the third layer are light transmittable.
10 . The light emitting device of claim 9 , wherein:
the first layer includes a first opening disposed on the first-type semiconductor layer of the first light emitter, the second layer includes a second opening disposed on the first-type semiconductor layer of the second light emitter, and the second opening has a width different from a width of the first opening.
11 . The light emitting device of claim 9 , wherein:
the second light emitter includes a reflector under the first-type semiconductor layer of the second light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
12 . The light emitting device of claim 11 , wherein:
the third light emitter includes a reflector under the first-type semiconductor layer of the third light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
13 . The light emitting device of claim 8 , wherein, in a current density per light emitter, a maximum external quantum efficiency of each of the first, second, and third light emitters is different from the maximum external quantum efficiency each other light emitter.
14 . The light emitting device of claim 8 , wherein:
the peak wavelength of the first light emitter is greater than the peak wavelength of the second light emitter, and the peak wavelength of the second light emitter is greater than the peak wavelength of the third light emitter.
15 . A light emitting device comprising:
a first light emitter including a first-type semiconductor layer, a first active layer, and a second-type semiconductor layer;
a second light emitter including a first-type semiconductor layer, a second active layer, and a second-type semiconductor layer;
a third light emitter including a first-type semiconductor layer, a third active layer, and a second-type semiconductor layer;
a first pad electrically connected to the second-type semiconductor layer of the first light emitter;
a second pad electrically connected to the second-type semiconductor layer of the second light emitter;
a third pad electrically connected to the second-type semiconductor layer of the third light emitter; and
a common pad electrically connected to the first-type semiconductor layer of the first light emitter,
wherein, in a same current per light emitter, each of the first, second, and third light emitters is respectively configured to emit light having a peak wavelength, and
wherein one of the first, second, and third light emitters has a different external quantum efficiency than an external quantum efficiency of another one of the first, second, and third light emitters.
16 . The light emitting device of claim 15 , wherein:
the first light emitter is covered by a first layer, the second light emitter is covered by a second layer, and the third light emitter is covered by a third layer, and
the first layer, second layer, and the third layer are light transmittable.
17 . The light emitting device of claim 16 , wherein:
the first layer includes a first opening disposed on the first-type semiconductor layer of the first light emitter, and the second layer includes a second opening disposed on the first-type semiconductor layer of the second light emitter, the second opening having a width different from a width of the first opening.
18 . The light emitting device of claim 16 , wherein:
the second light emitter includes a reflector under the first-type semiconductor layer of the second light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
19 . The light emitting device of claim 18 , wherein:
the third light emitter includes a reflector under the first-type semiconductor layer of the third light emitter, and the reflector includes a first material layer and a second material layer, the second material layer being different from the first material layer.
20 . The light emitting device of claim 15 , wherein, in a current density per light emitter, a maximum external quantum efficiency of each of the first, second, and third light emitters is different from the maximum external quantum efficiency of each other light emitter.