Method for forming perovskite layer
The present invention relates to a method for forming a perovskite layer on a silicon layer, the method comprising the steps of: depositing a perovskite inorganic layer on the silicon layer through a vapor deposition process; and coating the inorganic layer with a perovskite organic layer through a solution process, wherein the inorganic layer is formed by sequentially or simultaneously depositing at least three inorganic halogen compounds including different halogen elements.
1 . A method of forming a perovskite layer on top of a silicon layer, the method comprising:
depositing a perovskite inorganic layer on the top of the silicon layer by a vapor deposition process; and
coating the top of the inorganic layer with a perovskite organic layer by a solution process,
wherein the inorganic layer is formed by sequentially or simultaneously depositing three or more types of inorganic halogen compounds including different halogen elements.
2 . The method of claim 1 , further comprising:
waiting a predetermined time after the coating step for the inorganic layer and the organic layer to react and form an organic-inorganic perovskite thin film; and
heat treating the organic-inorganic perovskite thin film at a predetermined temperature for a predetermined time after the waiting step.
3 . The method of claim 1 , wherein the inorganic layer includes at least one divalent metal cation and three or more types of halogen anions.
4 . The method of claim 3 , wherein the inorganic layer further includes at least one monovalent metal cation.
5 . The method of claim 4 , wherein the monovalent metal cation is one or more selected from alkali metal ions consisting of Li + , Na + , K + , Rb + , and Cs + .
6 . The method of claim 3 , wherein the inorganic layer is composed of at least a first inorganic halogen compound, a second inorganic halogen compound, and a third inorganic halogen compound,
the first and second inorganic halogen compounds have a chemical formula of BX 2 with different types of compounds, where B is any one cation of lead (Pb 2+ ), tin (Sn 2+ ), tungsten (W 2+ ), copper (Cu 2+ ), zinc (Zn 2+ ), gallium (Ga 2+ ), germanium (Ge 2+ ), arsenic (As 2+ ), selenium (Se 2+ ), rhodium (Rh 2+ ), palladium (Pd 2+ ), silver (Ag 2+ ), cadmium (Cd 2+ ), indium (In 2+ ), antimony (Sb 2+ ), osmium (Os 2+ ), iridium (Ir 2+ ), platinum (Pt 2+ ), gold (Au 2+ ), mercury (Hg 2+ ), thallium (Tl 2+ ), bismuth (Bi 2+ ), and polonium (Po 2+ ), and X is any one anion of chlorine (Cl − ), bromine (Br − ), and iodine (I − ),
in the third inorganic halogen compound, the cation is any one monovalent alkali metal ion selected from the group consisting of Li + , Na + , K + , Rb + , and Cs + , and
a halogen anion among the halogen anions is any one selected from chlorine (Cl − ), bromine (Br − ), and iodine (I − ).
7 . The method of claim 6 , wherein the inorganic layer is formed by depositing PbI 2 to a thickness of 240 nm, PbBr 2 to a thickness of 80 nm, and CsCl to a thickness of 20 nm.
8 . The method of claim 1 , wherein an organic halogen compound forming the organic layer is any one methylammonium (MA=CH 3 NH 3+ ) compound selected from the group consisting of MACl, MABr, and MAI, or any one formamidium (FA=HC(NH 2 ) 2+ ) compound selected from the group consisting of FACl, FABr, and FAI.