IP Library › Granted Patent US 12713759
Granted Patent B1
US 12713759 · App. 19/207,205 · Granted Aug 18, 2026

Indium tin oxide-fullerene-methylammonium tin iodide-rubidium germanium iodide-copper(I) oxide-gold (ITO-C

Inventors: Syed M. Hasnain (Brisbane, AU); M. Amin Mir (Srinagar, IN)
Assignee: PRINCE MOHAMMAD BIN FAHD UNIVERSITY
H10K30/85H10K30/40H10K30/86H10K85/211H10K85/50
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Quick Facts
Patent No.
US 12713759
App. No.
19/207,205
Granted
Aug 18, 2026
Kind
B1
Abstract

A lead-free solar cell includes, in the following order, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu 2 O), an inorganic absorber layer including rubidium germanium iodide (RbGeI 3 ), a perovskite absorber layer including methylammonium tin iodide (MASnI 3 ), an electron transport layer (ETL) including C 60 , and a front contact layer including indium tin oxide (ITO). The solar cell achieves a current density (J sc ) of greater than or equal to 20 milliamperes per square centimeter (mA/cm 2 ) at an open-circuit voltage (V OC ) of 0.94 volts (V).

Claims (14)

1 . A lead-free solar cell, including, in the following order:

a back metal contact layer including gold (Au);

a hole transport layer (HTL) including copper oxide (Cu 2 O);

an inorganic absorber layer including rubidium germanium iodide (RbGeI 3 );

a perovskite absorber layer including methylammonium tin iodide (MASnI 3 );

an electron transport layer (ETL) including fullerene (C 60 ); and

a front contact layer including indium tin oxide (ITO);

wherein the solar cell achieves a current density (J sc ) of greater than or equal to 30 milliamperes per square centimeter (mA/cm 2 ) at an open-circuit voltage (V OC ) of 0.94 volts (V), and

wherein the ETL has a thickness of 0.03 μm, the perovskite absorber layer has a thickness of 0.4 μm, the inorganic absorber layer has a thickness of 0.4 μm, and the HTL has a thickness of 0.12 μm.

2 . The solar cell of claim 1 , wherein the solar cell has a power conservation efficiency (PCE) greater than or equal to 15 percent (%) based on the total power used at conditions of 32.7 mA/cm 2 and a V OC of 0.94 V.

3 . The solar cell of claim 2 , wherein the solar cell has a PCE greater than or equal to 17.5% based on the total power used at conditions of 32.7 mA/cm 2 and a V OC of 0.94 V.

4 . The solar cell of claim 3 , wherein the solar cell has a PCE greater than or equal to 20% based on the total power used at conditions of 32.7 mA/cm 2 and a V OC of 0.94 V.

5 . The solar cell of claim 1 , wherein the HTL has an energy bandgap in a range from 2.07 to 2.27 electron volts (eV) and the ETL has an energy bandgap in a range from 1.60 to 1.80 eV.

6 . The solar cell of claim 1 , wherein the inorganic absorber layer has an energy bandgap in a range from 1.21 to 1.41 eV and the perovskite absorber layer has an energy bandgap in a range from 1.2 to 1.4 eV.