Tandem organic light emitting device with increased emission efficiency and display apparatus including the same
A light emitting device may include a first electrode, a first light emitting stack disposed on the first electrode, a charge generation layer disposed on the first light emitting stack, a second light emitting stack disposed on the charge generation layer, and a second electrode disposed on the second light emitting stack. Each of the first light emitting stack and the second light emitting stack includes a hole transport layer. A hole mobility of the charge generation layer is lower than a hole mobility of the hole transport layer.
1 . A light emitting device comprising:
a first electrode;
a first light emitting stack disposed on the first electrode, the first light emitting stack comprising a first hole transport layer;
a charge generation layer disposed on the first light emitting stack, the charge generation layer comprising a p-type charge generation layer;
a second light emitting stack disposed on the charge generation layer, the second light emitting stack comprising a second hole transport layer; and
a second electrode disposed on the second light emitting stack, wherein,
a hole mobility of the p-type charge generation layer is lower than a hole mobility of the first hole transport layer and a hole mobility of the second hole transport layer, and
the p-type charge generation layer includes a highest occupied molecular orbital (HOMO) energy level that is equal to or lower than a HOMO energy level of the second hole transport layer.
2 . The light emitting device of claim 1 , wherein a material included in the hole transport layer is different from a material included in the charge generation layer.
3 . The light emitting device of claim 1 , wherein the hole mobility of the charge generation layer is in a range of about 50% to about 80% of the hole mobility of the hole transport layer.
4 . The light emitting device of claim 1 , wherein:
the charge generation layer comprises:
an n-type charge generation layer doped with an n-dopant; and
a p-type charge generation layer doped with a p-dopant, and
a hole mobility of the p-type charge generation layer is lower than the hole mobility of the hole transport layer.
5 . The light emitting device of claim 4 , wherein:
the p-type charge generation layer includes a thickness in a range of about 10 Å to about 100 Å; and
the hole transport layer includes a thickness in a range of about 100 Å to about 700 Å.
6 . The light emitting device of claim 1 , wherein the hole mobility of the charge generation layer is lower than a hole mobility of the second hole transport layer.
7 . The light emitting device of claim 1 , wherein the second hole transport layer is disposed directly on the charge generation layer.
8 . The light emitting device of claim 1 , wherein:
the first light emitting stack comprises a first light emitting layer disposed on the first hole transport layer; and
the second light emitting stack comprises a second light emitting layer disposed on the second hole transport layer.
9 . The light emitting device of claim 8 , wherein:
The first light emitting layer emits light having a first wavelength, and
the first wavelength is in a range of about 410 nm to about 480 nm.
10 . The light emitting device of claim 8 , wherein:
the second light emitting layer emits light having a first wavelength or a second wavelength,
the first wavelength is in a range of about 410 nm to about 480 nm, and
the second wavelength is in a range of about 500 nm to about 600 nm.
11 . The light emitting device of claim 1 , wherein:
the charge generation layer comprises:
an n-type charge generation layer disposed on the first light emitting stack; and
the p-type charge generation layer disposed on the n-type charge generation layer.
12 . The light emitting device of claim 11 , wherein a hole mobility of the p-type charge generation layer is lower than a hole mobility of the second hole transport layer.
13 . The light emitting device of claim 11 , wherein the second hole transport layer is disposed directly on the p-type charge generation layer.
14 . The light emitting device of claim 11 , wherein the HOMO energy level of each of the p-type charge generation layer and the second hole transport layer is in a range of about −5.3 eV to about −5.1 eV.
15 . A display apparatus comprising:
a base layer including:
a first pixel region emitting light having a first wavelength;
a second pixel region emitting light having a second wavelength different from the first wavelength; and
a third pixel region emitting light having a third wavelength different from the first wavelength and the second wavelength;
a light emitting device overlapping the first to third pixel regions and disposed on the base layer; and
a light control layer disposed on the light emitting device and including:
a first light control unit overlapping the first pixel region;
a second light control unit overlapping the second pixel region; and
a third light control unit overlapping the third pixel region,
wherein the light emitting device comprises:
a first electrode,
a first light emitting stack disposed on the first electrode, the first light emitting stack comprising a first hole transport layer,
a charge generation layer disposed on the first light emitting stack, the charge generation layer comprising a p-type charge generation layer,
a second light emitting stack disposed on the charge generation layer, the second light emitting stack comprising a second hole transport layer, and
a second electrode disposed on the second light emitting stack,
each of the first light emitting stack and the second light emitting stack includes a hole transport layer, and
a hole mobility of the p-type charge generation layer is lower than a hole mobility of the first hole transport layer and a hole mobility of the second hole transport layer, and
the p-type charge generation layer includes a highest occupied molecular orbital (HOMO) energy level that is equal to or lower than a HOMO energy level of the second hole transport layer.
16 . The display apparatus of claim 15 , wherein:
the second light control unit comprises a quantum dot that converts the light having the first wavelength into the light having the second wavelength; and
the third light control unit comprises a quantum dot that converts the light having the first wavelength or the light having the second wavelength into the light having the third wavelength.
17 . The display apparatus of claim 15 , further comprising a color filter layer disposed on the light control layer.
18 . The display apparatus of claim 15 , wherein:
the first electrode is a reflective electrode;
the second electrode is a transflective electrode or a transmissive electrode; and the light having the first wavelength is emitted in a direction from the first electrode to the second electrode.