Magnetic memory devices

1 . A magnetic memory device comprising:

a substrate;

a data storage pattern on the substrate; and

a lower contact plug between the substrate and the data storage pattern,

wherein the lower contact plug includes:

a lower insulating pattern on the substrate;

a lower contact pattern above the lower insulating pattern; and

a lower barrier pattern extending on a lower surface and a side surface of the lower insulating pattern and a side surface of the lower contact pattern,

wherein the lower barrier pattern extends at least on a portion of the side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.

2 . The magnetic memory device of claim 1 , wherein the data storage pattern includes a lower electrode, a magnetic tunnel junction pattern, and an upper electrode stacked on the lower contact plug.

3 . The magnetic memory device of claim 1 , wherein the lower contact pattern and the lower barrier pattern include TaN and/or TiN, and

wherein the lower insulating pattern includes oxide.

4 . The magnetic memory device of claim 1 , wherein the lower contact plug has a first height in a first direction perpendicular to an upper surface of the substrate and a first width in a second direction parallel to the upper surface of the substrate, and

wherein a ratio of the first width to the first height ranges from 0.7 to 1.7.

5 . The magnetic memory device of claim 1 , wherein the lower insulating pattern and the lower contact pattern are on an inner surface of the lower barrier pattern,

wherein an upper surface of the lower insulating pattern and a lower surface of the lower contact pattern are in contact with each other, and

wherein an upper surface of the lower contact pattern is at a same height as an upper surface of the lower barrier pattern.

6 . The magnetic memory device of claim 2 , wherein a lower surface of the lower electrode is in contact with an upper surface of the lower contact pattern and an upper surface of the lower barrier pattern.

7 . The magnetic memory device of claim 1 , wherein the lower insulating pattern has a height in a first direction perpendicular to an upper surface of the substrate, and

wherein the height of the lower insulating pattern is 100 angstroms (Å) to 300 Å.

8 . The magnetic memory device of claim 1 , wherein the lower barrier pattern has a first thickness between the lower insulating pattern and the substrate in a first direction perpendicular to an upper surface of the substrate, and

wherein the first thickness of the lower barrier pattern is 50 angstroms (Å) to 150 Å.

9 . The magnetic memory device of claim 1 , further comprising:

a lower wiring between the substrate and the lower contact plug, wherein the lower wiring is electrically connected to the lower contact plug; and

an upper wiring on the data storage pattern, wherein the upper wiring is electrically connected to the data storage pattern.

10 . The magnetic memory device of claim 9 , wherein the lower wiring is in contact with a lower surface of the lower barrier pattern.

11 . The magnetic memory device of claim 1 , further comprising an etching stop layer on the substrate,

wherein at least a portion of an outer surface of the lower contact plug is in contact with the etching stop layer.

12 . A magnetic memory device comprising:

a substrate;

an interlayer insulating layer on the substrate;

a lower contact plug in the interlayer insulating layer; and

a data storage pattern on the interlayer insulating layer and the lower contact plug,

wherein the lower contact plug includes:

a lower barrier pattern on the substrate, wherein side surfaces of the lower barrier pattern are in contact with the interlayer insulating layer;

a lower insulating pattern on the lower barrier pattern, wherein lower surfaces and side surfaces of the lower insulating pattern are in contact with the lower barrier pattern; and

a lower contact pattern on the lower insulating pattern,

wherein a lower surface of the lower contact pattern is in contact with the lower insulating pattern,

wherein a side surface of the lower contact pattern is in contact with the lower barrier pattern, and

wherein the lower barrier pattern extends on at least a portion of the side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.

13 . The magnetic memory device of claim 12 , wherein the data storage pattern includes:

a lower electrode on the lower contact plug;

an upper electrode on the lower electrode; and

a magnetic tunnel junction pattern between the lower electrode and the upper electrode.

14 . The magnetic memory device of claim 12 , wherein the lower contact pattern and the lower barrier pattern include TaN and/or TiN, and

wherein the lower insulating pattern includes oxide.

15 . The magnetic memory device of claim 12 , wherein the lower contact plug has a first height in a first direction perpendicular to an upper surface of the substrate and a first width in a second direction parallel to the upper surface of the substrate, and

wherein a ratio of the first width to the first height ranges from 0.7 to 1.7.

16 . The magnetic memory device of claim 12 , further comprising:

a lower wiring between the substrate and the lower contact plug, wherein the lower wiring is connected to the lower contact plug; and

an upper wiring on the data storage pattern, wherein the upper wiring is connected to the data storage pattern.

17 . The magnetic memory device of claim 12 , wherein a second height of the lower insulating pattern in a first direction perpendicular to an upper surface of the substrate is 100 angstroms (Å) to 300 Å, and

wherein the lower barrier pattern has a first thickness between the lower insulating pattern and the substrate in the first direction, and

wherein the first thickness is 50 Å to 150 Å.

18 . A magnetic memory device comprising:

a substrate;

a lower wiring on the substrate;

a lower contact plug on the lower wiring, wherein the lower contact plug is connected to the lower wiring;

a data storage pattern including a lower electrode, a magnetic tunnel junction pattern, and an upper electrode sequentially stacked on the lower contact plug; and

an upper wiring disposed on the data storage pattern, wherein the upper wiring is connected to the data storage pattern,

wherein the lower contact plug includes a lower metal pattern and a lower insulating pattern,

wherein the lower metal pattern surrounds the lower insulating pattern,

wherein the lower metal pattern extends between the lower insulating pattern and the lower wiring to be in contact with the lower wiring,

wherein the lower metal pattern comprises a lower contact pattern and a lower barrier pattern, and

wherein the lower barrier pattern extends at least on a portion of a side surface of the lower contact pattern that is above an uppermost surface of the lower insulating pattern.

19 . The magnetic memory device of claim 18 , wherein the lower metal pattern includes TaN and/or TiN, and

wherein the lower insulating pattern includes oxide.

20 . The magnetic memory device of claim 18 , wherein the lower contact plug has a first height in a first direction perpendicular to an upper surface of the substrate and a first width in a second direction parallel to the upper surface of the substrate, and

wherein a ratio of the first width to the first height ranges from 0.7 to 1.7.