Nitride laminate and manufacturing method of the same
A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.
1 . A nitride laminate comprising:
a polymer substrate;
a nitride layer provided on at least one of surfaces of the polymer substrate; and
a metal layer between the polymer substrate and the nitride layer,
wherein the nitride layer is in direct contact with the metal layer,
wherein the nitride layer has a wurtzite crystal structure,
wherein an atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and an atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less, and
wherein a full width at half maximum of an X-ray rocking curve of the nitride layer is 8 degrees or less.
2 . The nitride laminate as claimed in claim 1 ,
wherein a material of the nitride layer is selected from aluminum nitride, gallium nitride, indium nitride, or a compound thereof.
3 . The nitride laminate as claimed in claim 1 ,
wherein the nitride layer contains aluminum nitride as a main component.
4 . The nitride laminate as claimed in claim 1 ,
wherein the polymer substrate is formed of a material selected from polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), acrylic resin, cycloolefin polymer, and polyimide (PI).
5 . The nitride laminate as claimed in claim 1 ,
wherein a thickness of the nitride layer is from 10 nm to 10 μm.
6 . The nitride laminate as claimed in claim 1 ,
wherein the metal layer is formed of a metal having a body-centered cubic structure, including molybdenum (Mo), tungsten (W), lithium (Li), tantalum (Ta), niobium (Nb), and a layered structure thereof, or a metal having a hexagonal close-packed structure, including titanium (Ti), hafnium (Hf), ruthenium (Ru), zirconium (Zr), cobalt (Co), and a layered structure thereof.
7 . A manufacturing method of a nitride laminate, comprising:
forming a metal layer over a polymer substrate;
forming a nitride layer over the metal layer and in direct contact with the metal layer by a high power impulse magnetron sputtering at a substrate temperature of 150° C. or lower,
wherein the nitride layer has a wurtzite crystal structure,
wherein an atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and an atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less, and
wherein a full width at half maximum of an X-ray rocking curve of the nitride layer is 8 degrees or less.
8 . The manufacturing method as claimed in claim 7 ,
wherein degassing of a chamber is performed prior to film deposition of the nitride layer.