Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
According to one aspect of a technique of the present disclosure, there is provided a substrate processing method including: (a) supplying a metal-containing gas to a substrate; (b) supplying a first reducing gas to the substrate; and (c) supplying a second reducing gas different from the first reducing gas to the substrate, wherein a metal-containing film is formed on the substrate by performing (a), (b) and (c) at least once.
1 . A substrate processing method comprising:
(a) supplying a metal-containing gas containing molybdenum, oxygen and chlorine to a substrate;
(b) supplying a gas constituted by hydrogen to the substrate;
(c) supplying a gas, which is different from the gas constituted by hydrogen, containing hydrogen and an element other than hydrogen to the substrate; and
(d) forming a metal-containing film on the substrate by performing (a), (b) and
(c) at least once.
2 . The substrate processing method of claim 1 , wherein (b) and (c) are performed in a manner partially in parallel in time.
3 . The substrate processing method of claim 1 , wherein (b) and (c) are started simultaneously.
4 . The substrate processing method of claim 3 , wherein (b) is terminated after (c) is terminated.
5 . The substrate processing method of claim 1 , wherein (b) is started after (c) is started.
6 . The substrate processing method of claim 5 , wherein (b) is terminated after (c) is terminated.
7 . The substrate processing method of claim 1 , wherein (c) is started after (b) is started.
8 . The substrate processing method of claim 7 , wherein (b) is terminated after (c) is terminated.
9 . The substrate processing method of claim 1 , wherein (c) is performed while performing (b).
10 . The substrate processing method of claim 1 , wherein (b) is performed after (c) is performed.
11 . The substrate processing method of claim 1 , wherein a process time of (b) is longer than a process time of (c).
12 . The substrate processing method of claim 1 , wherein the metal-containing gas comprises molybdenum dichloride dioxide (MoO 2 Cl 2 ) gas.
13 . The substrate processing method of claim 12 , wherein the gas containing hydrogen and the element other than hydrogen comprises phosphine (PH3) gas.
14 . The substrate processing method of claim 1 , wherein the gas constituted by hydrogen comprises H 2 gas.
15 . The substrate processing method of claim 14 , wherein the gas containing hydrogen and the element other than hydrogen comprises phosphine (PH3) gas.
16 . The substrate processing method of claim 1 , wherein the gas containing hydrogen and the element other than hydrogen comprises phosphine (PH3) gas.
17 . A method of manufacturing a semiconductor device, comprising the substrate processing method of claim 1 .
18 . A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
(a) supplying a metal-containing gas containing molybdenum, oxygen and chlorine to a substrate;
(b) supplying a gas constituted by hydrogen to the substrate;
(c) supplying a gas, which is different from the gas constituted by hydrogen, containing hydrogen and an element other than hydrogen to the substrate; and
(d) forming a metal-containing film on the substrate by performing (a), (b) and (c) performed at least once.