Inorganic/hybrid stress films
A method of processing a substrate that includes: loading a substrate into a deposition tool, the substrate including a major working surface and a backside surface opposite the major working surface, the major working surface including a semiconductor device structure; in the deposition tool, performing a solution-based process to form a film on the backside surface, the film being an inorganic-based film or an organic-inorganic hybrid film.
1 . A method of processing a substrate, the method comprising:
functionalizing oxide particles comprising a metal or metalloid element with organic functional groups;
preparing a precursor solution by dispersing the functionalized oxide particles in a solvent;
loading a substrate into a deposition tool, the substrate comprising a major working surface and a backside surface opposite the major working surface, the major working surface comprising a semiconductor device structure; and
in the deposition tool, performing a solution-based process to form a film comprising the functionalized oxide particles on the backside surface from the precursor solution, the film being a hybrid film comprising organic and inorganic moieties.
2 . The method of claim 1 , wherein the substrate has a bow with a first curvature prior to forming the film, and wherein the substrate has a bow with a second curvature less than the first curvature after forming the film.
3 . The method of claim 1 , wherein the substrate is warped prior to forming the film, and wherein the film reduces the degree of warp of the substrate.
4 . The method of claim 1 , further comprising, after forming the film, processing the substrate at a process temperature of at least 400° C., wherein the film is stable at the process temperature and provides a structural support for the substrate such that a bowing of the substrate after the processing is less than 10 μm.
5 . The method of claim 1 , wherein the film comprises silicon oxide, silicon nitride, silicon oxycarbide, or silsesquioxane.
6 . The method of claim 1 , wherein the film comprises a metal oxide, metal nitride, or metal oxycarbide.
7 . The method of claim 1 , wherein the deposition tool is a spin-on module of a track system comprising a bake module, a developing module, and a transfer mechanism, further comprising exposing the film to actinic radiation using the track system.
8 . The method of claim 1 , further comprising exposing the film to a pattern of actinic radiation to induce crosslinking of components within the film.
9 . A method of processing a substrate, the method comprising:
preparing a film precursor solution by dissolving a film precursor in a solvent, the film precursor comprising a polysilazane;
forming a film comprising the film precursor on a backside surface of a substrate from the film precursor solution using a solution-based process, the substrate comprising a major working surface and the backside surface opposite the major working surface, the substrate being bowed;
baking the film to remove the solvent from the film; and
exposing the film to ultraviolet radiation having a wavelength less than 200 nm to induce pyrolysis of the polysilazane to form a crosslinked network comprising a silicon nitride-based polymeric structure within the film, the film reducing the degree of bowing of the substrate.
10 . The method of claim 9 , wherein the solution-based process comprises spin-on coating the film.
11 . The method of claim 9 , wherein the solution-based process comprises spray coating the film.
12 . The method of claim 9 , wherein exposing the film to ultraviolet radiation comprises exposing the film to a pattern of ultraviolet radiation having a wavelength less than 200 nm.
13 . The method of claim 12 , further comprising:
measuring the bowing of the substrate to obtain spatial information of the bowing; and
determining the pattern of the ultraviolet radiation based on the spatial information of the bowing, wherein the pattern of the ultraviolet radiation corresponds to areas of the film that undergo pyrolysis.
14 . A method of processing a substrate, the method comprising:
functionalizing oxide particles comprising a metal or metalloid element with organic functional groups;
preparing a precursor solution by dispersing the functionalized oxide particles (FP) in a solvent;
forming a film comprising the FP on a backside of a substrate from the precursor solution using a solution-based process, the substrate comprising a major working surface and the backside opposite the major working surface, the major working surface comprising a semiconductor device feature; and
baking the film to remove the solvent from the film.
15 . The method of claim 14 , wherein the organic functional groups comprise an acrylate, ester, or hydroxyl group.
16 . The method of claim 14 , further comprising exposing the film to a pattern of actinic radiation to induce crosslinking of the FP.
17 . The method of claim 14 , further comprising removing at least a portion of the organic functional groups from the FP after the baking.
18 . The method of claim 14 , wherein the metal element is titanium or zirconium.
19 . The method of claim 14 , wherein the metalloid element is silicon.